Продукція > HARRIS CORPORATION > Всі товари виробника HARRIS CORPORATION (4104) > Сторінка 60 з 69
Фото | Назва | Виробник | Інформація |
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IRFP341 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
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IRFP351 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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IRFP352 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.9A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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IRFP362 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
на замовлення 173 шт: термін постачання 21-31 дні (днів) |
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IRFP440 | Harris Corporation |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
на замовлення 2747 шт: термін постачання 21-31 дні (днів) |
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IRFP450R | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товар відсутній |
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IRFP451 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 538 шт: термін постачання 21-31 дні (днів) |
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IRFP462 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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IRFPC40 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.1A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
на замовлення 968 шт: термін постачання 21-31 дні (днів) |
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IRFPG42 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V |
на замовлення 2551 шт: термін постачання 21-31 дні (днів) |
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IRFR1109A | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IRFR121 | Harris Corporation |
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на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
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IRFR1219A | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IRFR21496 | Harris Corporation |
![]() Packaging: Bulk |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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IRFR220 | Harris Corporation |
![]() ![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 528 шт: термін постачання 21-31 дні (днів) |
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IRFR220119 | Harris Corporation |
Description: MOSFET N-CH 200V 4.6A Packaging: Bulk Part Status: Active |
товар відсутній |
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IRFR2209A | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 2270 шт: термін постачання 21-31 дні (днів) |
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IRFR2209AS2463 | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 1793 шт: термін постачання 21-31 дні (днів) |
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IRFR221 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 1075 шт: термін постачання 21-31 дні (днів) |
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IRFR222 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 944 шт: термін постачання 21-31 дні (днів) |
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IRFR2229A | Harris Corporation |
![]() Packaging: Bulk |
товар відсутній |
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IRFR321 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 1802 шт: термін постачання 21-31 дні (днів) |
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IRFR420 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
на замовлення 779 шт: термін постачання 21-31 дні (днів) |
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IRFR420U | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
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IRFR421 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IRFR422 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1.3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 1139 шт: термін постачання 21-31 дні (днів) |
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IRFR9110 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
на замовлення 554 шт: термін постачання 21-31 дні (днів) |
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IRFR91109A | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IRFR91209AR3603 | Harris Corporation |
Description: MOSFET P-CH 100V 5.6A Packaging: Bulk Part Status: Active |
товар відсутній |
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IRFU110 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
на замовлення 2825 шт: термін постачання 21-31 дні (днів) |
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IRFU1920 | Harris Corporation |
Description: RF MOSFET Packaging: Bulk |
на замовлення 1642 шт: термін постачання 21-31 дні (днів) |
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IRFU220 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
на замовлення 13114 шт: термін постачання 21-31 дні (днів) |
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IRFU220S2497 | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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IRFU221 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 2419 шт: термін постачання 21-31 дні (днів) |
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IRFU222 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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IRFU321 | Harris Corporation |
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товар відсутній |
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IRFU322 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 898 шт: термін постачання 21-31 дні (днів) |
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IRFU421 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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IRFU422 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1.3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IRFU9110 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
на замовлення 2564 шт: термін постачання 21-31 дні (днів) |
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IS80C286-16 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 68-LCC (J-Lead) Mounting Type: Surface Mount Speed: 16MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: 80C286 Voltage - I/O: 5V Supplier Device Package: 68-PLCC (24.21x24.21) Number of Cores/Bus Width: 1 Core, 16-Bit Co-Processors/DSP: Math Engine; 80C287 Graphics Acceleration: No Part Status: Active |
на замовлення 561 шт: термін постачання 21-31 дні (днів) |
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IS80C86 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Speed: 5MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: 80C86 Voltage - I/O: 5V Supplier Device Package: 44-PLCC (16.58x16.58) Number of Cores/Bus Width: 1 Core, 16-Bit Graphics Acceleration: No Part Status: Active |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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IS80C86-2 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Speed: 8MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: 80C86 Voltage - I/O: 5V Supplier Device Package: 44-PLCC (16.58x16.58) Number of Cores/Bus Width: 1 Core, 16-Bit Graphics Acceleration: No Part Status: Active |
на замовлення 1870 шт: термін постачання 21-31 дні (днів) |
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IS80C86-2R2490 | Harris Corporation |
![]() Packaging: Bulk |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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IS80C88 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Speed: 5MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: 80C88 Voltage - I/O: 5V Supplier Device Package: 44-PLCC (16.58x16.58) Number of Cores/Bus Width: 1 Core, 16-Bit Graphics Acceleration: No Part Status: Active |
на замовлення 21012 шт: термін постачання 21-31 дні (днів) |
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IS80C88-2 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 40-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 8MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: 80C88 Voltage - I/O: 5V Supplier Device Package: 40-CERDIP Number of Cores/Bus Width: 1 Core, 16-Bit Graphics Acceleration: No Part Status: Active |
товар відсутній |
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IS82C37A-5 | Harris Corporation |
![]() Packaging: Tube Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Applications: CMOS DMA Controller Supplier Device Package: 44-PLCC (16.58x16.58) Part Status: Obsolete |
товар відсутній |
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IS82C5296 | Harris Corporation |
![]() Features: Timer/Counter Packaging: Bulk Package / Case: 28-LCC (J-Lead) Number of Channels: 1, UART Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Protocol: RS232 Data Rate (Max): 1MBaud Supplier Device Package: 28-PLCC (11.51x11.51) With Auto Flow Control: No With IrDA Encoder/Decoder: No With False Start Bit Detection: Yes With Modem Control: Yes Part Status: Active |
товар відсутній |
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IS82C52R2490 | Harris Corporation |
![]() Packaging: Bulk |
на замовлення 485 шт: термін постачання 21-31 дні (днів) |
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IS82C54-10 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Frequency: 10MHz Type: Programmable Timer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 28-PLCC (11.51x11.51) Part Status: Active Current - Supply: 10 mA |
товар відсутній |
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IS82C54R2490 | Harris Corporation |
Description: CMOS PROGRAMMABLE INTERVAL TIMER Packaging: Bulk Part Status: Active |
на замовлення 263 шт: термін постачання 21-31 дні (днів) |
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IS82C55A-596 | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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IS82C55AR2490 | Harris Corporation |
Description: CMOS PROGRAMMABLE PERIPHERAL INT Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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IS82C59A-12R2413 | Harris Corporation |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Interface: System Bus Voltage - Supply: 4.5V ~ 5.5V Applications: Controller Supplier Device Package: 28-PLCC (11.51x11.51) Part Status: Active |
на замовлення 574 шт: термін постачання 21-31 дні (днів) |
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IS82C59A-12R2413 REEL | Harris Corporation |
![]() Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Interface: System Bus Voltage - Supply: 4.5V ~ 5.5V Applications: Controller Supplier Device Package: 28-PLCC (11.51x11.51) Part Status: Active |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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IS82C82 | Harris Corporation |
Description: 82CCMOCTLATCHIBDRIVER Packaging: Bulk |
товар відсутній |
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IS82C84A | Harris Corporation |
![]() Packaging: Bulk Package / Case: 20-LCC (J-Lead) Mounting Type: Surface Mount Output: TTL Frequency - Max: 25MHz Type: Clock Generator Input: TTL Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Supplier Device Package: 20-PLCC (9x9) PLL: No Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1633 шт: термін постачання 21-31 дні (днів) |
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IS82C85 | Harris Corporation |
![]() Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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ISL83385CA | Harris Corporation |
Description: RS-232 TRANSMITTER/RECIEVERS, +/ Packaging: Bulk Part Status: Active |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
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ISL83385CB | Harris Corporation |
Description: RS-232 TRANSMITTER/RECIEVERS, +/ Packaging: Bulk Part Status: Active |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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IRFP341 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
233+ | 104.6 грн |
IRFP351 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
148+ | 144.44 грн |
IRFP352 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 436 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
152+ | 140.89 грн |
IRFP362 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
66+ | 325.17 грн |
IRFP440 |
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Виробник: Harris Corporation
Description: MOSFET N-CH 500V 8.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 500V 8.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 2747 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
101+ | 212.19 грн |
IRFP450R |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товар відсутній
IRFP451 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 538 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
77+ | 277.5 грн |
IRFP462 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
71+ | 304.35 грн |
IRFPC40 |
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Виробник: Harris Corporation
Description: 6.8A 600V 1.200 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.1A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: 6.8A 600V 1.200 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.1A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
210+ | 101.46 грн |
IRFPG42 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
на замовлення 2551 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
144+ | 149.18 грн |
IRFR1109A |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
833+ | 25.36 грн |
IRFR121 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)IRFR1219A |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
825+ | 25.76 грн |
IRFR21496 |
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на замовлення 993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
993+ | 22.54 грн |
IRFR220 | ![]() |
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Виробник: Harris Corporation
Description: MOSFET N-CH 200V 4.6A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 200V 4.6A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 528 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
528+ | 41.98 грн |
IRFR220119 |
товар відсутній
IRFR2209A |
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на замовлення 2270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
592+ | 36.29 грн |
IRFR2209AS2463 |
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на замовлення 1793 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
592+ | 36.29 грн |
IRFR221 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 1075 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
683+ | 31.78 грн |
IRFR222 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 944 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
701+ | 31.06 грн |
IRFR2229A |
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товар відсутній
IRFR321 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1802 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
761+ | 27.48 грн |
IRFR420 |
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Виробник: Harris Corporation
Description: 2.5A 500V 3.000 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: 2.5A 500V 3.000 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 779 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
342+ | 62.87 грн |
IRFR420U |
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на замовлення 1995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
606+ | 35.72 грн |
IRFR421 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
683+ | 31.31 грн |
IRFR422 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1139 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
650+ | 32.41 грн |
IRFR9110 |
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Виробник: Harris Corporation
Description: MOSFET P-CH 100V 3.1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET P-CH 100V 3.1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
554+ | 46.44 грн |
IRFR91109A |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
761+ | 27.86 грн |
IRFR91209AR3603 |
товар відсутній
IRFU110 |
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Виробник: Harris Corporation
Description: 4.7A 100V 0.540 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Description: 4.7A 100V 0.540 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
919+ | 23.25 грн |
IRFU1920 |
на замовлення 1642 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
606+ | 35.22 грн |
IRFU220 |
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Виробник: Harris Corporation
Description: 4.6A 200V 0.800 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Description: 4.6A 200V 0.800 OHM N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 13114 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
346+ | 61.29 грн |
IRFU220S2497 |
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на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
900+ | 30.61 грн |
IRFU221 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 2419 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
701+ | 30.29 грн |
IRFU222 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
900+ | 32.81 грн |
IRFU322 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 898 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
898+ | 29.76 грн |
IRFU421 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
900+ | 30.6 грн |
IRFU422 |
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Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
740+ | 31.28 грн |
IRFU9110 |
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Виробник: Harris Corporation
Description: 3.1A 100V 1.200 OHM P-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: 3.1A 100V 1.200 OHM P-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 2564 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
833+ | 25.36 грн |
IS80C286-16 |
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Виробник: Harris Corporation
Description: IC MPU 16MHZ 68PLCC
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 16MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C286
Voltage - I/O: 5V
Supplier Device Package: 68-PLCC (24.21x24.21)
Number of Cores/Bus Width: 1 Core, 16-Bit
Co-Processors/DSP: Math Engine; 80C287
Graphics Acceleration: No
Part Status: Active
Description: IC MPU 16MHZ 68PLCC
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 16MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C286
Voltage - I/O: 5V
Supplier Device Package: 68-PLCC (24.21x24.21)
Number of Cores/Bus Width: 1 Core, 16-Bit
Co-Processors/DSP: Math Engine; 80C287
Graphics Acceleration: No
Part Status: Active
на замовлення 561 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 1099.39 грн |
IS80C86 |
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Виробник: Harris Corporation
Description: IC MPU 5MHZ 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 44-PLCC (16.58x16.58)
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
Description: IC MPU 5MHZ 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 44-PLCC (16.58x16.58)
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
на замовлення 288 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 1501.16 грн |
IS80C86-2 |
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Виробник: Harris Corporation
Description: IC MPU 8MHZ 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 8MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 44-PLCC (16.58x16.58)
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
Description: IC MPU 8MHZ 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 8MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 44-PLCC (16.58x16.58)
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
на замовлення 1870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 1088.37 грн |
IS80C86-2R2490 |
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на замовлення 88 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 1088.37 грн |
IS80C88 |
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Виробник: Harris Corporation
Description: IC MPU 5MHZ 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C88
Voltage - I/O: 5V
Supplier Device Package: 44-PLCC (16.58x16.58)
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
Description: IC MPU 5MHZ 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C88
Voltage - I/O: 5V
Supplier Device Package: 44-PLCC (16.58x16.58)
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
на замовлення 21012 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 1377.39 грн |
IS80C88-2 |
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Виробник: Harris Corporation
Description: IC MPU 8MHZ 40CERDIP
Packaging: Bulk
Package / Case: 40-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 8MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C88
Voltage - I/O: 5V
Supplier Device Package: 40-CERDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
Description: IC MPU 8MHZ 40CERDIP
Packaging: Bulk
Package / Case: 40-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 8MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C88
Voltage - I/O: 5V
Supplier Device Package: 40-CERDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
товар відсутній
IS82C37A-5 |
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Виробник: Harris Corporation
Description: PROGRAMMABLE DMA CONTROLLER
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 44-PLCC (16.58x16.58)
Part Status: Obsolete
Description: PROGRAMMABLE DMA CONTROLLER
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 44-PLCC (16.58x16.58)
Part Status: Obsolete
товар відсутній
IS82C5296 |
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Виробник: Harris Corporation
Description: CMOS SERIAL CONTROLLER INTERFACE
Features: Timer/Counter
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Number of Channels: 1, UART
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Protocol: RS232
Data Rate (Max): 1MBaud
Supplier Device Package: 28-PLCC (11.51x11.51)
With Auto Flow Control: No
With IrDA Encoder/Decoder: No
With False Start Bit Detection: Yes
With Modem Control: Yes
Part Status: Active
Description: CMOS SERIAL CONTROLLER INTERFACE
Features: Timer/Counter
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Number of Channels: 1, UART
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Protocol: RS232
Data Rate (Max): 1MBaud
Supplier Device Package: 28-PLCC (11.51x11.51)
With Auto Flow Control: No
With IrDA Encoder/Decoder: No
With False Start Bit Detection: Yes
With Modem Control: Yes
Part Status: Active
товар відсутній
IS82C52R2490 |
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на замовлення 485 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 1809.69 грн |
IS82C54-10 |
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Виробник: Harris Corporation
Description: CMOS PROGRAMMABLE INTERVAL TIMER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Frequency: 10MHz
Type: Programmable Timer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Active
Current - Supply: 10 mA
Description: CMOS PROGRAMMABLE INTERVAL TIMER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Frequency: 10MHz
Type: Programmable Timer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Active
Current - Supply: 10 mA
товар відсутній
IS82C54R2490 |
Виробник: Harris Corporation
Description: CMOS PROGRAMMABLE INTERVAL TIMER
Packaging: Bulk
Part Status: Active
Description: CMOS PROGRAMMABLE INTERVAL TIMER
Packaging: Bulk
Part Status: Active
на замовлення 263 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 621.31 грн |
IS82C55A-596 |
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Виробник: Harris Corporation
Description: 82C55 - CMOS PROGRAMMABLE PERIPH
Packaging: Bulk
Part Status: Active
Description: 82C55 - CMOS PROGRAMMABLE PERIPH
Packaging: Bulk
Part Status: Active
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 640.33 грн |
IS82C55AR2490 |
Виробник: Harris Corporation
Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IS82C59A-12R2413 |
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Виробник: Harris Corporation
Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Active
Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Active
на замовлення 574 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
43+ | 498.04 грн |
IS82C59A-12R2413 REEL |
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Виробник: Harris Corporation
Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Active
Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Active
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
43+ | 498.04 грн |
IS82C82 |
товар відсутній
IS82C84A |
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Виробник: Harris Corporation
Description: IC CLOCK GENERATOR 20PLCC
Packaging: Bulk
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 25MHz
Type: Clock Generator
Input: TTL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 20-PLCC (9x9)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 20PLCC
Packaging: Bulk
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Output: TTL
Frequency - Max: 25MHz
Type: Clock Generator
Input: TTL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 20-PLCC (9x9)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1633 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
127+ | 165.44 грн |
IS82C85 |
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Виробник: Harris Corporation
Description: PROCESSOR SPECIFIC CLOCK GENERAT
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: PROCESSOR SPECIFIC CLOCK GENERAT
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 57 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 751.39 грн |
ISL83385CA |
Виробник: Harris Corporation
Description: RS-232 TRANSMITTER/RECIEVERS, +/
Packaging: Bulk
Part Status: Active
Description: RS-232 TRANSMITTER/RECIEVERS, +/
Packaging: Bulk
Part Status: Active
на замовлення 660 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
211+ | 100.03 грн |
ISL83385CB |
Виробник: Harris Corporation
Description: RS-232 TRANSMITTER/RECIEVERS, +/
Packaging: Bulk
Part Status: Active
Description: RS-232 TRANSMITTER/RECIEVERS, +/
Packaging: Bulk
Part Status: Active
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
211+ | 100.05 грн |