ZXM64P02XTA Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 20V 3.5A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 47.15 грн |
| 2000+ | 42.38 грн |
| 5000+ | 40.26 грн |
| 10000+ | 36.36 грн |
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Технічний опис ZXM64P02XTA Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 8MSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-MSOP, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V.
Інші пропозиції ZXM64P02XTA за ціною від 34.02 грн до 103.77 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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ZXM64P02XTA | Виробник : Diodes Incorporated |
MOSFET 20V P-Chnl HDMOS |
на замовлення 5980 шт: термін постачання 21-30 дні (днів) |
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ZXM64P02XTA | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
на замовлення 13470 шт: термін постачання 21-31 дні (днів) |
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ZXM64P02XTA | Виробник : Diodes Inc |
Trans MOSFET P-CH 20V 3.5A 8-Pin MSOP T/R |
товар відсутній |
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| ZXM64P02XTA | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -19A; 1.1W; MSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -19A Power dissipation: 1.1W Case: MSOP8 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| ZXM64P02XTA | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -19A; 1.1W; MSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -19A Power dissipation: 1.1W Case: MSOP8 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |