WNSC10650WQ WeEn Semiconductors
Виробник: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC10650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK
Schottky Diodes & Rectifiers WNSC10650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK
на замовлення 1186 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 235.91 грн |
10+ | 208.73 грн |
100+ | 148.38 грн |
600+ | 126.29 грн |
1200+ | 106.28 грн |
5400+ | 105.59 грн |
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Технічний опис WNSC10650WQ WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 328pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Інші пропозиції WNSC10650WQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WNSC10650WQ | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 50A кількість в упаковці: 1200 шт |
товар відсутній |
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WNSC10650WQ | Виробник : WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товар відсутній |
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WNSC10650WQ | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 50A |
товар відсутній |