на замовлення 3976 шт:
термін постачання 110-119 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 101.45 грн |
10+ | 81.75 грн |
100+ | 55.07 грн |
500+ | 46.72 грн |
1000+ | 38.03 грн |
2000+ | 35.82 грн |
4000+ | 34.09 грн |
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Технічний опис TJ60S04M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 40V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V.
Інші пропозиції TJ60S04M3L(T6L1,NQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TJ60S04M3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
товар відсутній |
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TJ60S04M3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
товар відсутній |