T2N7002AK,LM(T TOSHIBA
Виробник: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.76A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 30000 шт
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Технічний опис T2N7002AK,LM(T TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.2A, Pulsed drain current: 0.76A, Power dissipation: 0.32W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 3.2Ω, Mounting: SMD, Gate charge: 0.35nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 30000 шт.
Інші пропозиції T2N7002AK,LM(T
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T2N7002AK,LM(T | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.76A Power dissipation: 0.32W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: SMD Gate charge: 0.35nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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