Технічний опис SPW15N60CFD INF
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V.
Інші пропозиції SPW15N60CFD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SPW15N60CFD | Виробник : INFINEON |
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на замовлення 2100 шт: термін постачання 14-28 дні (днів) |
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SPW15N60CFD | Виробник : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V |
товар відсутній |
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SPW15N60CFD | Виробник : Infineon Technologies |
MOSFET N-Ch 600V 13.4A TO247-3 CoolMOS CFD |
товар відсутній |