SPP03N60S5XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 53060 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 495+ | 42.64 грн |
Відгуки про товар
Написати відгук
Технічний опис SPP03N60S5XKSA1 Infineon Technologies
Description: LOW POWER_LEGACY, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 135µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V.
Інші пропозиції SPP03N60S5XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SPP03N60S5XKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|
|
|
SPP03N60S5XKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|
|
|
SPP03N60S5XKSA1 | Виробник : Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 135µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
товар відсутній |
|
 |
SPP03N60S5XKSA1 | Виробник : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
товар відсутній |