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SKM200GBD126D 22891102

SKM200GBD126D 22891102 SEMIKRON DANFOSS


SKM200GBD126D-DTE.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 186A
Pulsed collector current: 414A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SKM200GBD126D 22891102 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Type of module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS3, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 186A, Pulsed collector current: 414A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, кількість в упаковці: 1 шт.

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SKM200GBD126D 22891102 SKM200GBD126D 22891102 Виробник : SEMIKRON DANFOSS SKM200GBD126D-DTE.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 186A
Pulsed collector current: 414A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній