SH8K26GZ0TB ROHM Semiconductor
Виробник: ROHM SemiconductorMOSFET 4V Drive Nch+Nch MOSFET. Middle Power MOSFET SH8K26 is suitable for switching power supply.
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.63 грн |
| 10+ | 58.81 грн |
| 100+ | 39.27 грн |
| 500+ | 31.06 грн |
| 1000+ | 24.84 грн |
| 2500+ | 22.43 грн |
| 10000+ | 20.15 грн |
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Технічний опис SH8K26GZ0TB ROHM Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 6A, Pulsed drain current: 12A, Power dissipation: 2W, Case: SOP8, Gate-source voltage: ±12V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 2.9nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate.
Інші пропозиції SH8K26GZ0TB
| Фото | Назва | Виробник | Інформація |
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SH8K26GZ0TB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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SH8K26GZ0TB | Виробник : Rohm Semiconductor |
Description: 4V DRIVE NCH+NCH MOSFET. MIDDLE |
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SH8K26GZ0TB | Виробник : Rohm Semiconductor |
Description: 4V DRIVE NCH+NCH MOSFET. MIDDLE |
товар відсутній |
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SH8K26GZ0TB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |