Продукція > DIODES INCORPORATED > SDM02M30CLP3-7B
SDM02M30CLP3-7B

SDM02M30CLP3-7B Diodes Incorporated

DIOD_S_A0008534032_1-2543080.pdf Виробник: Diodes Incorporated
Schottky Diodes & Rectifiers Schottky Diode X2-DFN1006-3 T&R 10K
на замовлення 16199 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
16+20.21 грн
24+ 13.73 грн
100+ 4.9 грн
1000+ 2.97 грн
2500+ 2.76 грн
10000+ 2.28 грн
20000+ 2.21 грн
Мінімальне замовлення: 16
Відгуки про товар
Написати відгук

Технічний опис SDM02M30CLP3-7B Diodes Incorporated

Description: DIODE SCHOT 30V 200MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 2 ns, Technology: Schottky, Capacitance @ Vr, F: 3.3pF @ 5V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: X2-DFN1006-3, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 100 mA, Current - Reverse Leakage @ Vr: 400 µA @ 30 V.

Інші пропозиції SDM02M30CLP3-7B

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
SDM02M30CLP3-7B SDM02M30CLP3-7B Виробник : Diodes Incorporated SDM02M30CLP3.pdf Description: DIODE SCHOT 30V 200MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 3.3pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X2-DFN1006-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 100 mA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
на замовлення 19480 шт:
термін постачання 21-31 дні (днів)
SDM02M30CLP3-7B SDM02M30CLP3-7B Виробник : Diodes Incorporated SDM02M30CLP3.pdf Description: DIODE SCHOT 30V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 3.3pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X2-DFN1006-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 100 mA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
SDM02M30CLP3-7B Виробник : DIODES INCORPORATED SDM02M30CLP3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 2ns; X2-DFN1006-3
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 2ns
Semiconductor structure: common cathode; double
Capacitance: 3.3pF
Max. forward voltage: 0.7V
Case: X2-DFN1006-3
Kind of package: reel; tape
Leakage current: 0.4µA
Max. forward impulse current: 2A
Power dissipation: 0.35W
кількість в упаковці: 20 шт
товар відсутній
SDM02M30CLP3-7B Виробник : DIODES INCORPORATED SDM02M30CLP3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 2ns; X2-DFN1006-3
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 2ns
Semiconductor structure: common cathode; double
Capacitance: 3.3pF
Max. forward voltage: 0.7V
Case: X2-DFN1006-3
Kind of package: reel; tape
Leakage current: 0.4µA
Max. forward impulse current: 2A
Power dissipation: 0.35W
товар відсутній