RTR020N05TL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 23.01 грн |
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Технічний опис RTR020N05TL Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V.
Інші пропозиції RTR020N05TL за ціною від 20.7 грн до 72.39 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RTR020N05TL | Виробник : ROHM |
Description: ROHM - RTR020N05TL - Leistungs-MOSFET, niedrige Gate-Schwellenspannung, n-Kanal, 45 V, 2 A, 0.25 ohm, TSMT tariffCode: 85412900 Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm |
на замовлення 297 шт: термін постачання 21-31 дні (днів) |
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RTR020N05TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 4998 шт: термін постачання 21-31 дні (днів) |
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RTR020N05TL | Виробник : ROHM Semiconductor | MOSFET SINGLE N-CHAN 45V 2A |
на замовлення 6888 шт: термін постачання 21-30 дні (днів) |
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RTR020N05TL | Виробник : ROHM |
Description: ROHM - RTR020N05TL - Leistungs-MOSFET, niedrige Gate-Schwellenspannung, n-Kanal, 45 V, 2 A, 0.25 ohm, TSMT tariffCode: 85412900 Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm |
на замовлення 297 шт: термін постачання 21-31 дні (днів) |
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RTR020N05TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 2A кількість в упаковці: 1 шт |
товар відсутній |
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RTR020N05TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 2A |
товар відсутній |