RQA0011DNS#G0 Renesas Electronics America Inc


Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 16V 3.8A 2HWSON
Packaging: Tape & Reel (TR)
Package / Case: 2-DFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 750mV @ 1mA
Supplier Device Package: 2-HWSON (5x4)
Part Status: Obsolete
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
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Технічний опис RQA0011DNS#G0 Renesas Electronics America Inc

Description: MOSFET N-CH 16V 3.8A 2HWSON, Packaging: Tape & Reel (TR), Package / Case: 2-DFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 750mV @ 1mA, Supplier Device Package: 2-HWSON (5x4), Part Status: Obsolete, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 16 V, Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V.

Інші пропозиції RQA0011DNS#G0

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RQA0011DNS#G0 Виробник : Nexperia USA Inc. Description: RQA0011DNS#G0 - Silicon N-Channe
Packaging: Bulk
Package / Case: 3-DFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: 2-HWSON (5x4)
Part Status: Obsolete
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
товар відсутній