RGW80TS65DGC11 ROHM Semiconductor
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 465.38 грн |
| 10+ | 385.71 грн |
| 25+ | 315.39 грн |
| 100+ | 271.22 грн |
| 250+ | 256.04 грн |
| 450+ | 236.02 грн |
| 900+ | 194.62 грн |
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Технічний опис RGW80TS65DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/143ns, Switching Energy: 760µJ (on), 720µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 110 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 214 W.
Інші пропозиції RGW80TS65DGC11 за ціною від 345.93 грн до 488.23 грн
| Фото | Назва | Виробник | Інформація |
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RGW80TS65DGC11 | Виробник : Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 78A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/143ns Switching Energy: 760µJ (on), 720µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
на замовлення 438 шт: термін постачання 21-31 дні (днів) |
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| RGW80TS65DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 59ns Turn-off time: 228ns Type of transistor: IGBT Power dissipation: 107W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 110nC кількість в упаковці: 1 шт |
товар відсутній |
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| RGW80TS65DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 59ns Turn-off time: 228ns Type of transistor: IGBT Power dissipation: 107W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 110nC |
товар відсутній |