RGS50TSX2DHRC11 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 182 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 717.42 грн |
| 30+ | 551.6 грн |
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Технічний опис RGS50TSX2DHRC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 50A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 182 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/140ns, Switching Energy: 1.4mJ (on), 1.65mJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 67 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 395 W.
Інші пропозиції RGS50TSX2DHRC11 за ціною від 378.88 грн до 778.58 грн
| Фото | Назва | Виробник | Інформація |
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RGS50TSX2DHRC11 | Виробник : ROHM Semiconductor |
IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial. |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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| RGS50TSX2DHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Mounting: THT Turn-on time: 53ns Turn-off time: 345ns Type of transistor: IGBT Power dissipation: 197W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 67nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A кількість в упаковці: 1 шт |
товар відсутній |
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| RGS50TSX2DHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Mounting: THT Turn-on time: 53ns Turn-off time: 345ns Type of transistor: IGBT Power dissipation: 197W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 67nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A |
товар відсутній |