RGS00TS65DHRC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 257.55 грн |
30+ | 196.3 грн |
120+ | 168.26 грн |
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Технічний опис RGS00TS65DHRC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 36ns/115ns, Switching Energy: 1.46mJ (on), 1.29mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 58 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 326 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RGS00TS65DHRC11 за ціною від 163.56 грн до 494.21 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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RGS00TS65DHRC11 | Виробник : Rohm Semiconductor | Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGS00TS65DHRC11 | Виробник : ROHM Semiconductor | IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
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RGS00TS65DHRC11 | Виробник : Rohm Semiconductor | Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
на замовлення 434 шт: термін постачання 21-31 дні (днів) |
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RGS00TS65DHRC11 | Виробник : Rohm Semiconductor | Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGS00TS65DHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 292ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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RGS00TS65DHRC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 292ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |