QS6U24TR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.24 грн |
| 6000+ | 13.9 грн |
Відгуки про товар
Написати відгук
Технічний опис QS6U24TR Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V.
Інші пропозиції QS6U24TR за ціною від 13.46 грн до 44.2 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
QS6U24TR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 1A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V |
на замовлення 11255 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
QS6U24TR | Виробник : ROHM Semiconductor |
MOSFET P-CH 30V 1A TSMT6 |
на замовлення 4516 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| QS6U24TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -1A Pulsed drain current: -2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
| QS6U24TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -1A Pulsed drain current: -2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |