Технічний опис PRF957,115 NXP Semiconductors
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 270mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V, Frequency - Transition: 8.5GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz, Supplier Device Package: SC-70.
Інші пропозиції PRF957,115
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PRF957,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 10V 8.5GHZ SOT323-3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 270mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 |
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PRF957,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 270mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 |
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PRF957,115 | Виробник : NXP Semiconductors |
RF Bipolar Transistors NPN 10V 100MA 8.5GHZ |
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| PRF957,115 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT |
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