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NVTYS9D6P04M8LTWG ON Semiconductor


nvtys9d6p04m8l-d.pdf Виробник: ON Semiconductor
Power MOSFET, Single P-Channel
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Технічний опис NVTYS9D6P04M8LTWG ON Semiconductor

Description: MV8 40V LL SINGLE PCH L, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V, Power Dissipation (Max): 3.9W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 580µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V.

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NVTYS9D6P04M8LTWG Виробник : onsemi nvtys9d6p04m8l-d.pdf Description: MV8 40V LL SINGLE PCH L
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 3.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 580µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V
товар відсутній