на замовлення 1500 шт:
термін постачання 669-678 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.63 грн |
| 10+ | 106.35 грн |
| 100+ | 73.84 грн |
| 250+ | 70.39 грн |
| 500+ | 61.35 грн |
| 1000+ | 52.59 грн |
| 1500+ | 49.9 грн |
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Технічний опис NVTFWS003N04CTAG onsemi
Description: MOSFET N-CH 40V 22A/103A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVTFWS003N04CTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NVTFWS003N04CTAG | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 40V 22A Automotive 8-Pin WDFN EP T/R |
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NVTFWS003N04CTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVTFWS003N04CTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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