NTMFD1D6N03P8 onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
на замовлення 1722000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 46.63 грн |
| 6000+ | 43.21 грн |
| 9000+ | 41.78 грн |
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Технічний опис NTMFD1D6N03P8 onsemi
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.
Інші пропозиції NTMFD1D6N03P8 за ціною від 42.51 грн до 113.53 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NTMFD1D6N03P8 | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
на замовлення 1724994 шт: термін постачання 21-31 дні (днів) |
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| NTMFD1D6N03P8 | Виробник : onsemi | MOSFET PT8 N-CH DUAL 30V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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