NTMFD1D4N02P1E onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 25V 13A/74A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 75.12 грн |
Відгуки про товар
Написати відгук
Технічний опис NTMFD1D4N02P1E onsemi
Description: MOSFET 2N-CH 25V 13A/74A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 960mW (Ta), 1W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.
Інші пропозиції NTMFD1D4N02P1E за ціною від 71.45 грн до 166.48 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NTMFD1D4N02P1E | Виробник : onsemi |
Description: MOSFET 2N-CH 25V 13A/74A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 1W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
на замовлення 5940 шт: термін постачання 21-31 дні (днів) |
|