Технічний опис MUBW35-12A8 IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 35A, Case: E3-Pack, Application: motors, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 70A, Power dissipation: 225W, Technology: NPT, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MUBW35-12A8
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MUBW35-12A8 | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Power dissipation: 225W Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MUBW35-12A8 | Виробник : IXYS |
Description: IGBT MODULE 1200V 50A 225W E3 |
товар відсутній |
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| MUBW35-12A8 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Power dissipation: 225W Technology: NPT Mechanical mounting: screw |
товар відсутній |