MMIX1F230N20T IXYS
Виробник: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Drain-source voltage: 200V
Drain current: 156A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 358nC
Case: SMPD
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 630A
кількість в упаковці: 1 шт
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Технічний опис MMIX1F230N20T IXYS
Description: MOSFET N-CH 200V 168A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 168A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Інші пропозиції MMIX1F230N20T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MMIX1F230N20T | Виробник : Littelfuse |
Trans MOSFET N-CH 200V 156A 21-Pin SMPD-X |
товар відсутній |
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| MMIX1F230N20T | Виробник : IXYS |
Description: MOSFET N-CH 200V 168A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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MMIX1F230N20T | Виробник : IXYS |
MOSFET SMPD MOSFETs Power Device |
товар відсутній |
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| MMIX1F230N20T | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A Mounting: SMD Drain-source voltage: 200V Drain current: 156A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET Reverse recovery time: 200ns Power dissipation: 600W Polarisation: unipolar Gate charge: 358nC Case: SMPD Technology: GigaMOS™; HiPerFET™; Trench™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 630A |
товар відсутній |