MMIX1F160N30T IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2647.71 грн |
20+ | 2411.14 грн |
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Технічний опис MMIX1F160N30T IXYS
Description: MOSFET N-CH 300V 102A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V, Power Dissipation (Max): 570W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Інші пропозиції MMIX1F160N30T за ціною від 3004.66 грн до 3177.25 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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MMIX1F160N30T | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Pulsed drain current: 440A Power dissipation: 570W Case: SMPD Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 367nC Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 7-14 дні (днів) |
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MMIX1F160N30T | Виробник : Littelfuse | Trans MOSFET N-CH 300V 102A 21-Pin SMPD |
товар відсутній |
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MMIX1F160N30T | Виробник : IXYS |
Description: MOSFET N-CH 300V 102A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V Power Dissipation (Max): 570W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
товар відсутній |
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MMIX1F160N30T | Виробник : IXYS | MOSFET SMPD MOSFETs Power Device |
товар відсутній |