MMIX1F132N50P3 IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 330A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 330A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2817.26 грн |
20+ | 2581.52 грн |
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Технічний опис MMIX1F132N50P3 IXYS
Description: MOSFET N-CH 500V 63A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.
Інші пропозиції MMIX1F132N50P3 за ціною від 2631.5 грн до 3494.53 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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MMIX1F132N50P3 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 330A Power dissipation: 520W Case: SMPD Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: SMD Gate charge: 267nC Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 7-14 дні (днів) |
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MMIX1F132N50P3 | Виробник : IXYS |
Description: MOSFET N-CH 500V 63A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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MMIX1F132N50P3 | Виробник : IXYS | MOSFET Polar3 HiPerFET Power MOSFET |
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