Технічний опис MIW75N65AS2Y-BP Micro Commercial Components
Description: IGBT DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 160 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A, Supplier Device Package: TO-247AB, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/121ns, Switching Energy: 3.12mJ (on), 1.11mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 180 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 428 W.
Інші пропозиції MIW75N65AS2Y-BP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MIW75N65AS2Y-BP | Виробник : Micro Commercial Co |
Description: IGBT DISCRETE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 160 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A Supplier Device Package: TO-247AB IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/121ns Switching Energy: 3.12mJ (on), 1.11mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 428 W |
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