FQD4N20TM onsemi
Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 9174 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1086+ | 19.57 грн |
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Технічний опис FQD4N20TM onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V.
Інші пропозиції FQD4N20TM за ціною від 19.57 грн до 19.57 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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FQD4N20TM | Виробник : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
на замовлення 2552 шт: термін постачання 21-31 дні (днів) |
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FQD4N20TM | Виробник : ON Semiconductor | Trans MOSFET N-CH 200V 3A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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FQD4N20TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.95A; Idm: 12A; 30W; DPAK Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 200V Drain current: 1.95A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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FQD4N20TM | Виробник : onsemi |
Description: MOSFET N-CH 200V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
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FQD4N20TM | Виробник : onsemi / Fairchild | MOSFET 200V N-Ch QFET Logic Level |
товар відсутній |
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FQD4N20TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.95A; Idm: 12A; 30W; DPAK Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 200V Drain current: 1.95A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: reel; tape |
товар відсутній |