FDP050AN06A0 onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: MOSFET N-CH 60V 18A/80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
на замовлення 1853 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 200.07 грн |
50+ | 154.37 грн |
100+ | 127.01 грн |
500+ | 100.86 грн |
1000+ | 85.58 грн |
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Технічний опис FDP050AN06A0 onsemi
Description: MOSFET N-CH 60V 18A/80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.
Інші пропозиції FDP050AN06A0 за ціною від 89.03 грн до 217.39 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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FDP050AN06A0 | Виробник : onsemi / Fairchild | MOSFET N-Channel PowerTrench |
на замовлення 1600 шт: термін постачання 147-156 дні (днів) |
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FDP050AN06A0 | Виробник : ON Semiconductor | Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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FDP050AN06A0 | Виробник : ONSEMI |
Description: ONSEMI - FDP050AN06A0 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 0.0043 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 245W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: Lead (14-Jun-2023) |
товар відсутній |
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FDP050AN06A0 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Technology: PowerTrench® Case: TO220AB Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 245W Drain current: 18A Drain-source voltage: 60V Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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FDP050AN06A0 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Technology: PowerTrench® Case: TO220AB Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 245W Drain current: 18A Drain-source voltage: 60V Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |