FDB120N10 onsemi
Виробник: onsemiDescription: MOSFET N-CH 100V 74A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.02 грн |
| 10+ | 171.02 грн |
| 100+ | 138.36 грн |
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Технічний опис FDB120N10 onsemi
Description: MOSFET N-CH 100V 74A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V.
Інші пропозиції FDB120N10 за ціною від 94.55 грн до 227.05 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDB120N10 | Виробник : onsemi / Fairchild |
MOSFET 100V N-Chan 12Mohm PowerTrench |
на замовлення 4193 шт: термін постачання 21-30 дні (днів) |
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FDB120N10 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 100V 74A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| FDB120N10 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Technology: PowerTrench® Power dissipation: 170W Polarisation: unipolar Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 296A Drain-source voltage: 100V Drain current: 52A On-state resistance: 12mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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FDB120N10 | Виробник : onsemi |
Description: MOSFET N-CH 100V 74A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V |
товар відсутній |
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| FDB120N10 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Technology: PowerTrench® Power dissipation: 170W Polarisation: unipolar Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 296A Drain-source voltage: 100V Drain current: 52A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
товар відсутній |