DMP2066UFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 10 V
Description: MOSFET P-CH 20V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.84 грн |
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Технічний опис DMP2066UFDE-7 Diodes Incorporated
Description: MOSFET P-CH 20V 6.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 10 V.
Інші пропозиції DMP2066UFDE-7 за ціною від 7.87 грн до 31.48 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMP2066UFDE-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 6.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 10 V |
на замовлення 4618 шт: термін постачання 21-31 дні (днів) |
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DMP2066UFDE-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
на замовлення 5800 шт: термін постачання 21-30 дні (днів) |
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DMP2066UFDE-7 | Виробник : Diodes Inc | Trans MOSFET P-CH 20V 6.2A 6-Pin DFN EP T/R |
товар відсутній |
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DMP2066UFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -25A Power dissipation: 2.03W Gate charge: 14.4nC Polarisation: unipolar Drain current: -5.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 75mΩ Gate-source voltage: ±12V кількість в упаковці: 1 шт |
товар відсутній |
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DMP2066UFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -25A Power dissipation: 2.03W Gate charge: 14.4nC Polarisation: unipolar Drain current: -5.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 75mΩ Gate-source voltage: ±12V |
товар відсутній |