DMP1055UFDB-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.48 грн |
| 6000+ | 12.32 грн |
| 9000+ | 11.44 грн |
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Технічний опис DMP1055UFDB-7 Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V, Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP1055UFDB-7 за ціною від 12.08 грн до 43.4 грн
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DMP1055UFDB-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.9A Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMP1055UFDB-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
на замовлення 1428 шт: термін постачання 21-30 дні (днів) |
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| DMP1055UFDB-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar On-state resistance: 0.215Ω Drain current: -4A Drain-source voltage: -12V Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Type of transistor: P-MOSFET Case: U-DFN2020-6 Power dissipation: 1.89W кількість в упаковці: 3000 шт |
товар відсутній |
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| DMP1055UFDB-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar On-state resistance: 0.215Ω Drain current: -4A Drain-source voltage: -12V Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Type of transistor: P-MOSFET Case: U-DFN2020-6 Power dissipation: 1.89W |
товар відсутній |