DI7A6N04SQ2 Diotec Semiconductor
на замовлення 3982 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.63 грн |
| 10+ | 47.06 грн |
| 100+ | 24.5 грн |
| 500+ | 24.29 грн |
| 1000+ | 23.53 грн |
| 2000+ | 20.77 грн |
| 4000+ | 19.6 грн |
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Технічний опис DI7A6N04SQ2 Diotec Semiconductor
Description: MOSFET SO8 N 40V 0.028OHM 150C, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V, Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DI7A6N04SQ2
| Фото | Назва | Виробник | Інформація |
Доступність |
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DI7A6N04SQ2 | Виробник : DIOTEC SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DI7A6N04SQ2 | Виробник : Diotec Semiconductor |
Description: MOSFET SO8 N 40V 0.028OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
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DI7A6N04SQ2 | Виробник : Diotec Semiconductor |
Description: MOSFET SO8 N 40V 0.028OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
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DI7A6N04SQ2 | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |