DI035P04PT Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET POWERQFN 3X3 P -40V -35A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 13.95 грн |
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Технічний опис DI035P04PT Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 P -40V -35A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V.
Інші пропозиції DI035P04PT за ціною від 13.28 грн до 43.3 грн
| Фото | Назва | Виробник | Інформація |
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DI035P04PT | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 P -40V -35A Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI035P04PT | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3 Mounting: SMD Kind of package: reel; tape Power dissipation: 40W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Case: QFN3X3 Drain-source voltage: -40V Drain current: -35A On-state resistance: 15mΩ Type of transistor: P-MOSFET кількість в упаковці: 5000 шт |
товар відсутній |
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DI035P04PT | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 3x3, -40V, -35A, P, 25W |
товар відсутній |
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| DI035P04PT | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 40W; QFN3X3 Mounting: SMD Kind of package: reel; tape Power dissipation: 40W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Case: QFN3X3 Drain-source voltage: -40V Drain current: -35A On-state resistance: 15mΩ Type of transistor: P-MOSFET |
товар відсутній |