DI010N03PW Diotec Semiconductor
на замовлення 6800 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.46 грн |
| 12+ | 26.9 грн |
| 100+ | 14.08 грн |
| 500+ | 13.94 грн |
| 1000+ | 13.46 грн |
| 2000+ | 12.42 грн |
| 4000+ | 10.56 грн |
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Технічний опис DI010N03PW Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0., Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-QFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V.
Інші пропозиції DI010N03PW за ціною від 17.58 грн до 44.08 грн
| Фото | Назва | Виробник | Інформація |
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DI010N03PW | Виробник : Diotec Semiconductor |
 Description: MOSFET POWERQFN 2X2 N 30V 10A 0.Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DI010N03PW | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 50A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DI010N03PW | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
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DI010N03PW | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 2X2 N 30V 10A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
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DI010N03PW | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 50A; 1.4W; QFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 50A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |