BXT3800P06M BRIDGELUX
Виробник: BRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: SOT23-3
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
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Технічний опис BXT3800P06M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Power dissipation: 1.2W, Gate charge: 11nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -12A, Case: SOT23-3, Drain-source voltage: -60V, Drain current: -2.1A, On-state resistance: 0.55Ω, Type of transistor: P-MOSFET, кількість в упаковці: 5 шт.
Інші пропозиції BXT3800P06M
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BXT3800P06M | Виробник : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Case: SOT23-3 Drain-source voltage: -60V Drain current: -2.1A On-state resistance: 0.55Ω Type of transistor: P-MOSFET |
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