Технічний опис APT100F50J Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 500V, Drain current: 65A, Case: ISOTOP, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 36mΩ, Pulsed drain current: 490A, Power dissipation: 960W, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APT100F50J
| Фото | Назва | Виробник | Інформація |
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| APT100F50J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 36mΩ Pulsed drain current: 490A Power dissipation: 960W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT100F50J | Виробник : Microchip / Microsemi |
 Discrete Semiconductor Modules FG, FREDFET, 500V, SOT-227 |
товар відсутній |
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| APT100F50J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 36mΩ Pulsed drain current: 490A Power dissipation: 960W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |