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1SS250(TE85L,F) Toshiba

Name: 1SS250(TE85L,F)
Brand: Toshiba
SKU: 70700-4
Price: 5.11 UAH
Availability: InStock

Виробник: Toshiba
Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

на замовлення 2274 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна без ПДВ
10+	32.21 грн
15+	22.3 грн
100+	9.8 грн
1000+	6.83 грн
3000+	5.87 грн
9000+	5.18 грн
24000+	5.11 грн

Мінімальне замовлення: 10

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Технічний опис 1SS250(TE85L,F) Toshiba

Description: DIODE GEN PURP 200V 100MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-59, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.

Інші пропозиції 1SS250(TE85L,F)

Назва	Виробник	Інформація	Доступність
1SS250(TE85L,F)	Виробник : TOSHIBA	Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 60ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Max. forward voltage: 1.2V Case: SOT346 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.15W кількість в упаковці: 5 шт	товар відсутній
1SS250(TE85L,F)	Виробник : Toshiba Semiconductor and Storage	Description: DIODE GEN PURP 200V 100MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V	товар відсутній
1SS250(TE85L,F)	Виробник : Toshiba Semiconductor and Storage	Description: DIODE GEN PURP 200V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V	товар відсутній
1SS250(TE85L,F)	Виробник : TOSHIBA	Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 60ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Max. forward voltage: 1.2V Case: SOT346 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.15W	товар відсутній