Продукція > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Всі товари виробника YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1760) > Сторінка 11 з 30

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без ПДВ
GBU1010A-B1-0000 GBU1010A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU10005A%20THRU%20GBU1010A.pdf Description: RECT BRIDGE 1000V 10A GBU
товар відсутній
GBU1506-B1-0000 GBU1506-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU15005%20THRU%20GBU1510.pdf Description: RECT BRIDGE 600V 15A GBU
товар відсутній
GBU1508-B1-0000 GBU1508-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU15005%20THRU%20GBU1510.pdf Description: RECT BRIDGE 800V 15A GBU
товар відсутній
GBU1510A GBU1510A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU15005A%20THRU%20GBU1510A.pdf Description: RECT BRIDGE 1000V 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU1510A-B1-0000 GBU1510A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU15005A%20THRU%20GBU1510A.pdf Description: RECT BRIDGE 1000V 15A GBU
товар відсутній
GBU1510-B1-0000 GBU1510-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU15005%20THRU%20GBU1510.pdf Description: RECT BRIDGE 1000V 15A GBU
товар відсутній
GBU2508 GBU2508 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU25005%20THRU%20GBU2510.pdf Description: RECT BRIDGE 800V 25A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU2508-B1-0000 GBU2508-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU25005%20THRU%20GBU2510.pdf Description: RECT BRIDGE 800V 25A GBU
товар відсутній
GBU2510-B1-0000 GBU2510-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU25005%20THRU%20GBU2510.pdf Description: RECT BRIDGE 1000V 25A GBU
товар відсутній
GBU3008 GBU3008 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU30005_thru_GBU3010.pdf Description: RECT BRIDGE 800V 30A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU3008-B1-0000 GBU3008-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU30005_thru_GBU3010.pdf Description: RECT BRIDGE 800V 30A GBU
товар відсутній
GBU406A GBU406A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005A%20THRU%20GBU410A.pdf Description: RECT BRIDGE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU406A-B1-0000 GBU406A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005A%20THRU%20GBU410A.pdf Description: RECT BRIDGE 600V 4A GBU
товар відсутній
GBU406-B1-0000HF GBU406-B1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005%20THRU%20GBU410.pdf Description: RECT BRIDGE 600V 4A GBU
товар відсутній
GBU408A GBU408A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005A%20THRU%20GBU410A.pdf Description: RECT BRIDGE 800V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU408A-B1-0000 GBU408A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005A%20THRU%20GBU410A.pdf Description: RECT BRIDGE 800V 4A GBU
товар відсутній
GBU408-B1-0000 GBU408-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005%20THRU%20GBU410.pdf Description: RECT BRIDGE 800V 4A GBU
товар відсутній
GBU410A GBU410A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005A%20THRU%20GBU410A.pdf Description: RECT BRIDGE 1000V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU410A-B1-0000 GBU410A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005A%20THRU%20GBU410A.pdf Description: RECT BRIDGE 1000V 4A GBU
товар відсутній
GBU410-B1-0000 GBU410-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU4005%20THRU%20GBU410.pdf Description: RECT BRIDGE 1000V 4A GBU
товар відсутній
GBU606-B1-0000HF GBU606-B1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GBU6005%20THRU%20GBU610.pdf Description: RECT BRIDGE 600V 6A GBU
товар відсутній
GBU608-B1-0000 GBU608-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU6005%20THRU%20GBU610.pdf Description: RECT BRIDGE 800V 6A GBU
на замовлення 861 шт:
термін постачання 21-31 дні (днів)
5+69.95 грн
10+ 59.45 грн
100+ 45.61 грн
500+ 33.84 грн
Мінімальне замовлення: 5
GBU610A GBU610A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU6005A%20THRU%20GBU610A.pdf Description: RECT BRIDGE 1000V 6A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU610A-B1-0000 GBU610A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU6005A%20THRU%20GBU610A.pdf Description: RECT BRIDGE 1000V 6A GBU
товар відсутній
GBU610-B1-0000 GBU610-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU6005%20THRU%20GBU610.pdf Description: RECT BRIDGE 1000V 6A GBU
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
5+75.27 грн
10+ 64.06 грн
100+ 49.14 грн
500+ 36.46 грн
Мінімальне замовлення: 5
GBU806A GBU806A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU8005A%20THRU%20GBU810A.pdf Description: RECT BRIDGE 600V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU808-B1-0000 GBU808-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU8005%20THRU%20GBU810.pdf Description: RECT BRIDGE 800V 8A GBU
товар відсутній
GBU810A GBU810A Yangzhou Yangjie Electronic Technology Co.,Ltd GBU8005A%20THRU%20GBU810A.pdf Description: RECT BRIDGE 1000V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU810A-B1-0000 GBU810A-B1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU8005A%20THRU%20GBU810A.pdf Description: RECT BRIDGE 1000V 8A GBU
товар відсутній
GBU810-B1-3000 GBU810-B1-3000 Yangzhou Yangjie Electronic Technology Co.,Ltd GBU8005%20THRU%20GBU810.pdf Description: RECT BRIDGE 1000V 8A GBU
товар відсутній
GR1D GR1D Yangzhou Yangjie Electronic Technology Co.,Ltd GR1A%20THRU%20GR1M.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GR1D GR1D Yangzhou Yangjie Electronic Technology Co.,Ltd GR1A%20THRU%20GR1M.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GR1D-F1-0000HF GR1D-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR1A%20THRU%20GR1M.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
GR1D-F1-0000HF GR1D-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR1A%20THRU%20GR1M.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
GR1M-F1-0000HF GR1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR1A%20THRU%20GR1M.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
товар відсутній
GR1M-F1-0000HF GR1M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR1A%20THRU%20GR1M.pdf Description: DIODE GEN PURP 1000V 1A DO214AC
товар відсутній
GR2JA-F1-3000HF GR2JA-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
GR2JA-F1-3000HF GR2JA-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
GR2M GR2M Yangzhou Yangjie Electronic Technology Co.,Ltd GR2A%20THRU%20GR2M.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
товар відсутній
GR2M GR2M Yangzhou Yangjie Electronic Technology Co.,Ltd GR2A%20THRU%20GR2M.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
товар відсутній
GR2MA GR2MA Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR2MA GR2MA Yangzhou Yangjie Electronic Technology Co.,Ltd GS2AA%20THRU%20GS2MA.pdf Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR2M-F1-0000HF GR2M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR2A%20THRU%20GR2M.pdf Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
GR2M-F1-0000HF GR2M-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR2A%20THRU%20GR2M.pdf Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
GR3K GR3K Yangzhou Yangjie Electronic Technology Co.,Ltd GR3A%20THRU%20GR3M.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GR3K GR3K Yangzhou Yangjie Electronic Technology Co.,Ltd GR3A%20THRU%20GR3M.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GR3M GR3M Yangzhou Yangjie Electronic Technology Co.,Ltd GR3A%20THRU%20GR3M.pdf Description: DIODE GEN PURP 1KV 3A DO214AB
товар відсутній
GR3M GR3M Yangzhou Yangjie Electronic Technology Co.,Ltd GR3A%20THRU%20GR3M.pdf Description: DIODE GEN PURP 1KV 3A DO214AB
товар відсутній
GR3MB GR3MB Yangzhou Yangjie Electronic Technology Co.,Ltd GR3AB%20THRU%20GR3MB.pdf Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2747 шт:
термін постачання 21-31 дні (днів)
13+25.09 грн
17+ 18.08 грн
100+ 10.25 грн
500+ 6.37 грн
1000+ 4.88 грн
Мінімальне замовлення: 13
GR3MB GR3MB Yangzhou Yangjie Electronic Technology Co.,Ltd GR3AB%20THRU%20GR3MB.pdf Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR3MB-F1-0000HF GR3MB-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR3AB%20THRU%20GR3MB.pdf Description: DIODE GEN PURP 1000V 3A DO214AA
товар відсутній
GR3MB-F1-0000HF GR3MB-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GR3AB%20THRU%20GR3MB.pdf Description: DIODE GEN PURP 1000V 3A DO214AA
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
11+28.13 грн
15+ 20.65 грн
Мінімальне замовлення: 11
GR3M-F1-0000 GR3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GR3A%20THRU%20GR3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
GR3M-F1-0000 GR3M-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GR3A%20THRU%20GR3M.pdf Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
GR5J-F1-0000 GR5J-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GR5A%20THRU%20GR5M.pdf Description: DIODE GEN PURP 600V 5A DO214AB
товар відсутній
GR5J-F1-0000 GR5J-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd GR5A%20THRU%20GR5M.pdf Description: DIODE GEN PURP 600V 5A DO214AB
товар відсутній
GS1G-F1-0000HF GS1G-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
GS1G-F1-0000HF GS1G-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
GS1J-F1-0000HF GS1J-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
GS1J-F1-0000HF GS1J-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd GS1A%20THRU%20GS1M.pdf Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
GBU1010A-B1-0000 GBU10005A%20THRU%20GBU1010A.pdf
GBU1010A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 10A GBU
товар відсутній
GBU1506-B1-0000 GBU15005%20THRU%20GBU1510.pdf
GBU1506-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 15A GBU
товар відсутній
GBU1508-B1-0000 GBU15005%20THRU%20GBU1510.pdf
GBU1508-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 15A GBU
товар відсутній
GBU1510A GBU15005A%20THRU%20GBU1510A.pdf
GBU1510A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU1510A-B1-0000 GBU15005A%20THRU%20GBU1510A.pdf
GBU1510A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
товар відсутній
GBU1510-B1-0000 GBU15005%20THRU%20GBU1510.pdf
GBU1510-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
товар відсутній
GBU2508 GBU25005%20THRU%20GBU2510.pdf
GBU2508
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 25A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU2508-B1-0000 GBU25005%20THRU%20GBU2510.pdf
GBU2508-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 25A GBU
товар відсутній
GBU2510-B1-0000 GBU25005%20THRU%20GBU2510.pdf
GBU2510-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A GBU
товар відсутній
GBU3008 GBU30005_thru_GBU3010.pdf
GBU3008
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 30A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU3008-B1-0000 GBU30005_thru_GBU3010.pdf
GBU3008-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 30A GBU
товар відсутній
GBU406A GBU4005A%20THRU%20GBU410A.pdf
GBU406A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU406A-B1-0000 GBU4005A%20THRU%20GBU410A.pdf
GBU406A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
товар відсутній
GBU406-B1-0000HF GBU4005%20THRU%20GBU410.pdf
GBU406-B1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
товар відсутній
GBU408A GBU4005A%20THRU%20GBU410A.pdf
GBU408A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU408A-B1-0000 GBU4005A%20THRU%20GBU410A.pdf
GBU408A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
товар відсутній
GBU408-B1-0000 GBU4005%20THRU%20GBU410.pdf
GBU408-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
товар відсутній
GBU410A GBU4005A%20THRU%20GBU410A.pdf
GBU410A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU410A-B1-0000 GBU4005A%20THRU%20GBU410A.pdf
GBU410A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
товар відсутній
GBU410-B1-0000 GBU4005%20THRU%20GBU410.pdf
GBU410-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
товар відсутній
GBU606-B1-0000HF GBU6005%20THRU%20GBU610.pdf
GBU606-B1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 6A GBU
товар відсутній
GBU608-B1-0000 GBU6005%20THRU%20GBU610.pdf
GBU608-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 6A GBU
на замовлення 861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.95 грн
10+ 59.45 грн
100+ 45.61 грн
500+ 33.84 грн
Мінімальне замовлення: 5
GBU610A GBU6005A%20THRU%20GBU610A.pdf
GBU610A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU610A-B1-0000 GBU6005A%20THRU%20GBU610A.pdf
GBU610A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
товар відсутній
GBU610-B1-0000 GBU6005%20THRU%20GBU610.pdf
GBU610-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+75.27 грн
10+ 64.06 грн
100+ 49.14 грн
500+ 36.46 грн
Мінімальне замовлення: 5
GBU806A GBU8005A%20THRU%20GBU810A.pdf
GBU806A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU808-B1-0000 GBU8005%20THRU%20GBU810.pdf
GBU808-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 8A GBU
товар відсутній
GBU810A GBU8005A%20THRU%20GBU810A.pdf
GBU810A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU810A-B1-0000 GBU8005A%20THRU%20GBU810A.pdf
GBU810A-B1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
товар відсутній
GBU810-B1-3000 GBU8005%20THRU%20GBU810.pdf
GBU810-B1-3000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
товар відсутній
GR1D GR1A%20THRU%20GR1M.pdf
GR1D
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GR1D GR1A%20THRU%20GR1M.pdf
GR1D
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GR1D-F1-0000HF GR1A%20THRU%20GR1M.pdf
GR1D-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
GR1D-F1-0000HF GR1A%20THRU%20GR1M.pdf
GR1D-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
GR1M-F1-0000HF GR1A%20THRU%20GR1M.pdf
GR1M-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
товар відсутній
GR1M-F1-0000HF GR1A%20THRU%20GR1M.pdf
GR1M-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
товар відсутній
GR2JA-F1-3000HF GS2AA%20THRU%20GS2MA.pdf
GR2JA-F1-3000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
GR2JA-F1-3000HF GS2AA%20THRU%20GS2MA.pdf
GR2JA-F1-3000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
GR2M GR2A%20THRU%20GR2M.pdf
GR2M
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
товар відсутній
GR2M GR2A%20THRU%20GR2M.pdf
GR2M
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
товар відсутній
GR2MA GS2AA%20THRU%20GS2MA.pdf
GR2MA
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR2MA GS2AA%20THRU%20GS2MA.pdf
GR2MA
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR2M-F1-0000HF GR2A%20THRU%20GR2M.pdf
GR2M-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
GR2M-F1-0000HF GR2A%20THRU%20GR2M.pdf
GR2M-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
GR3K GR3A%20THRU%20GR3M.pdf
GR3K
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GR3K GR3A%20THRU%20GR3M.pdf
GR3K
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GR3M GR3A%20THRU%20GR3M.pdf
GR3M
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
товар відсутній
GR3M GR3A%20THRU%20GR3M.pdf
GR3M
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
товар відсутній
GR3MB GR3AB%20THRU%20GR3MB.pdf
GR3MB
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2747 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+25.09 грн
17+ 18.08 грн
100+ 10.25 грн
500+ 6.37 грн
1000+ 4.88 грн
Мінімальне замовлення: 13
GR3MB GR3AB%20THRU%20GR3MB.pdf
GR3MB
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR3MB-F1-0000HF GR3AB%20THRU%20GR3MB.pdf
GR3MB-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
товар відсутній
GR3MB-F1-0000HF GR3AB%20THRU%20GR3MB.pdf
GR3MB-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.13 грн
15+ 20.65 грн
Мінімальне замовлення: 11
GR3M-F1-0000 GR3A%20THRU%20GR3M.pdf
GR3M-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
GR3M-F1-0000 GR3A%20THRU%20GR3M.pdf
GR3M-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
GR5J-F1-0000 GR5A%20THRU%20GR5M.pdf
GR5J-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 5A DO214AB
товар відсутній
GR5J-F1-0000 GR5A%20THRU%20GR5M.pdf
GR5J-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 5A DO214AB
товар відсутній
GS1G-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1G-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
GS1G-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1G-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
GS1J-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1J-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
GS1J-F1-0000HF GS1A%20THRU%20GS1M.pdf
GS1J-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
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