Продукція > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Всі товари виробника YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1760) > Сторінка 11 з 30
Фото | Назва | Виробник | Інформація |
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GBU1010A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU1506-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU1508-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU1510A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GBU1510A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU1510-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU2508 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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GBU2508-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU2510-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU3008 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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GBU3008-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU406A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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GBU406A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU406-B1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU408A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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GBU408A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU408-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU410A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GBU410A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU410-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU606-B1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU608-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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на замовлення 861 шт: термін постачання 21-31 дні (днів) |
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GBU610A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GBU610A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU610-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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на замовлення 979 шт: термін постачання 21-31 дні (днів) |
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GBU806A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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GBU808-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU810A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GBU810A-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU810-B1-3000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR1D | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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GR1D | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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GR1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR1D-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR1M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR1M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR2JA-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR2JA-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR2M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR2M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR2MA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GR2MA | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GR2M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR2M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR3K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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GR3K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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GR3M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR3M | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR3MB | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 2747 шт: термін постачання 21-31 дні (днів) |
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GR3MB | Yangzhou Yangjie Electronic Technology Co.,Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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GR3MB-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR3MB-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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на замовлення 98 шт: термін постачання 21-31 дні (днів) |
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GR3M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR3M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR5J-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GR5J-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GS1G-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GS1G-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GS1J-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GS1J-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
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GBU1010A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 10A GBU
Description: RECT BRIDGE 1000V 10A GBU
товар відсутній
GBU1506-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 15A GBU
Description: RECT BRIDGE 600V 15A GBU
товар відсутній
GBU1508-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 15A GBU
Description: RECT BRIDGE 800V 15A GBU
товар відсутній
GBU1510A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 15A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU1510A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Description: RECT BRIDGE 1000V 15A GBU
товар відсутній
GBU1510-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBU
Description: RECT BRIDGE 1000V 15A GBU
товар відсутній
GBU2508 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 25A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 25A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU2508-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 25A GBU
Description: RECT BRIDGE 800V 25A GBU
товар відсутній
GBU2510-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A GBU
Description: RECT BRIDGE 1000V 25A GBU
товар відсутній
GBU3008 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 30A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 30A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU3008-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 30A GBU
Description: RECT BRIDGE 800V 30A GBU
товар відсутній
GBU406A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: RECT BRIDGE 600V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU406A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Description: RECT BRIDGE 600V 4A GBU
товар відсутній
GBU406-B1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A GBU
Description: RECT BRIDGE 600V 4A GBU
товар відсутній
GBU408A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBU408A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Description: RECT BRIDGE 800V 4A GBU
товар відсутній
GBU408-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A GBU
Description: RECT BRIDGE 800V 4A GBU
товар відсутній
GBU410A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 4A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU410A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Description: RECT BRIDGE 1000V 4A GBU
товар відсутній
GBU410-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A GBU
Description: RECT BRIDGE 1000V 4A GBU
товар відсутній
GBU606-B1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 6A GBU
Description: RECT BRIDGE 600V 6A GBU
товар відсутній
GBU608-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 6A GBU
Description: RECT BRIDGE 800V 6A GBU
на замовлення 861 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.95 грн |
10+ | 59.45 грн |
100+ | 45.61 грн |
500+ | 33.84 грн |
GBU610A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 6A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU610A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Description: RECT BRIDGE 1000V 6A GBU
товар відсутній
GBU610-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A GBU
Description: RECT BRIDGE 1000V 6A GBU
на замовлення 979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 75.27 грн |
10+ | 64.06 грн |
100+ | 49.14 грн |
500+ | 36.46 грн |
GBU806A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: RECT BRIDGE 600V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBU808-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 8A GBU
Description: RECT BRIDGE 800V 8A GBU
товар відсутній
GBU810A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBU810A-B1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Description: RECT BRIDGE 1000V 8A GBU
товар відсутній
GBU810-B1-3000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A GBU
Description: RECT BRIDGE 1000V 8A GBU
товар відсутній
GR1D |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GR1D |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GR1D-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
GR1D-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
GR1M-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Description: DIODE GEN PURP 1000V 1A DO214AC
товар відсутній
GR1M-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Description: DIODE GEN PURP 1000V 1A DO214AC
товар відсутній
GR2JA-F1-3000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AC
Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
GR2JA-F1-3000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AC
Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
GR2M |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
Description: DIODE GEN PURP 1KV 2A DO214AA
товар відсутній
GR2M |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AA
Description: DIODE GEN PURP 1KV 2A DO214AA
товар відсутній
GR2MA |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR2MA |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR2M-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
GR2M-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
GR3K |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GR3K |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GR3M |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
Description: DIODE GEN PURP 1KV 3A DO214AB
товар відсутній
GR3M |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AB
Description: DIODE GEN PURP 1KV 3A DO214AB
товар відсутній
GR3MB |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2747 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.09 грн |
17+ | 18.08 грн |
100+ | 10.25 грн |
500+ | 6.37 грн |
1000+ | 4.88 грн |
GR3MB |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GR3MB-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Description: DIODE GEN PURP 1000V 3A DO214AA
товар відсутній
GR3MB-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AA
Description: DIODE GEN PURP 1000V 3A DO214AA
на замовлення 98 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.13 грн |
15+ | 20.65 грн |
GR3M-F1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
GR3M-F1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
GR5J-F1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 5A DO214AB
Description: DIODE GEN PURP 600V 5A DO214AB
товар відсутній
GR5J-F1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 5A DO214AB
Description: DIODE GEN PURP 600V 5A DO214AB
товар відсутній
GS1G-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 1A DO214AC
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
GS1G-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 1A DO214AC
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
GS1J-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
GS1J-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 1A DO214AC
Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній