| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| WMF08N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced |
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| WMF08N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMF09N60C2 | WAYON |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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WMF09N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMF09N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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WMF09N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMF09N70C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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WMF09N70C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMF10N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 515 шт: термін постачання 21-30 дні (днів) |
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WMF10N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 515 шт: термін постачання 14-21 дні (днів) |
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| WMF10N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced |
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| WMF10N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMF10N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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WMF10N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMF10N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 Type of transistor: N-MOSFET Technology: SJMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| WMF10N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 Type of transistor: N-MOSFET Technology: SJMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMF10N70C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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WMF10N70C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG04N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 29W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 2.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG04N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 29W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 2.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG07N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG07N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG07N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG07N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG09N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG09N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG09N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG09N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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WMG09N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 45W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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WMG09N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 45W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH04N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| WMH04N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH04N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| WMH04N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH04N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 2.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH04N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 29W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 2.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH07N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH07N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| WMH07N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH07N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 42W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| WMH07N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 42W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| WMH09N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH09N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| WMH09N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH09N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| WMH09N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 45W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH09N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 45W Case: TO251S2 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| WMH4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| WMH4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| WMH7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 150W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WMH7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 150W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WMI30N60D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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WMI30N60D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 176 шт: термін постачання 14-21 дні (днів) |
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WMJ020N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Kind of channel: enhanced Case: TO247-3 |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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WMJ020N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Kind of channel: enhanced Case: TO247-3 кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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| WMF08N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF08N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF09N60C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF09N60C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF09N65C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF09N65C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF09N70C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF09N70C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF10N60C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 515 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46 грн |
| 10+ | 38.74 грн |
| 12+ | 32.44 грн |
| 25+ | 28.62 грн |
| 39+ | 22.85 грн |
| 106+ | 21.65 грн |
| WMF10N60C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 515 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 48.27 грн |
| 10+ | 38.93 грн |
| 25+ | 34.35 грн |
| 39+ | 27.42 грн |
| 106+ | 25.99 грн |
| WMF10N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF10N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF10N65C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF10N65C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF10N65C4 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF10N65C4 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMF10N70C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| WMF10N70C2 |
|
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG04N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG04N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG07N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG07N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG07N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG07N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG07N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG07N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG09N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG09N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG09N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG09N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMG09N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMG09N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH04N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH04N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH04N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH04N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH04N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH04N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH07N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH07N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH07N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH07N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH07N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH07N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH09N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH09N60C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH09N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH09N65C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH09N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH09N70C2 |
|
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH4N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH4N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH4N80D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH4N80D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMH7N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WMH7N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| WMI30N60D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 176 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.63 грн |
| 10+ | 97.41 грн |
| 13+ | 71.18 грн |
| 35+ | 66.69 грн |
| WMI30N60D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 176 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.1 грн |
| 3+ | 161.54 грн |
| 10+ | 116.89 грн |
| 13+ | 85.42 грн |
| 35+ | 80.03 грн |
| WMJ020N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of channel: enhanced
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of channel: enhanced
Case: TO247-3
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.45 грн |
| 3+ | 190.32 грн |
| 6+ | 152.11 грн |
| 16+ | 143.87 грн |
| WMJ020N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of channel: enhanced
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of channel: enhanced
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.54 грн |
| 3+ | 237.17 грн |
| 6+ | 182.53 грн |
| 16+ | 172.64 грн |
| 90+ | 169.04 грн |
| 300+ | 166.35 грн |