Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37669) > Сторінка 581 з 628

Обрати Сторінку:    << Попередня Сторінка ]  1 62 124 186 248 310 372 434 496 558 576 577 578 579 580 581 582 583 584 585 586 620 628  Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
P6SMB33AHE3_B/H P6SMB33AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,33V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB33AHM3_B/H P6SMB33AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,33V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C4V3-HE3_A-18 BZX84C4V3-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C4V3-HE3_A-08 BZX84C4V3-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 4.3V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5KE82AHE3_B/C 1.5KE82AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,82V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB1635HE3_B/P MBRB1635HE3_B/P Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB1635HE3_B/I MBRB1635HE3_B/I Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H35HE3_B/P MBRB16H35HE3_B/P Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H45HE3_B/P MBRB16H45HE3_B/P Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H60HE3_B/P MBRB16H60HE3_B/P Vishay General Semiconductor - Diodes Division mbrb16h35_45_60.pdf Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H35HE3_B/I MBRB16H35HE3_B/I Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H45HE3_B/I MBRB16H45HE3_B/I Vishay General Semiconductor - Diodes Division MBR(F,B)16H35 - 16H60.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H60HE3_B/I MBRB16H60HE3_B/I Vishay General Semiconductor - Diodes Division mbrb16h35_45_60.pdf Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB30H45CTHE3_B/I MBRB30H45CTHE3_B/I Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+87.55 грн
1600+ 71.53 грн
Мінімальне замовлення: 800
MBRB30H45CTHE3_B/I MBRB30H45CTHE3_B/I Vishay General Semiconductor - Diodes Division mbr30h100ct.pdf Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
2+156.62 грн
10+ 125.12 грн
100+ 99.63 грн
Мінімальне замовлення: 2
MBRB745-E3/45 MBRB745-E3/45 Vishay General Semiconductor - Diodes Division mbr7xx.pdf Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
4+80.59 грн
10+ 63.62 грн
100+ 49.46 грн
500+ 39.34 грн
1000+ 32.05 грн
Мінімальне замовлення: 4
6DFN51A-M3/I 6DFN51A-M3/I Vishay General Semiconductor - Diodes Division Description: 600W,51V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+6.95 грн
Мінімальне замовлення: 14000
6DFN51A-M3/I 6DFN51A-M3/I Vishay General Semiconductor - Diodes Division Description: 600W,51V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
11+29.65 грн
14+ 22.33 грн
100+ 13.38 грн
500+ 11.62 грн
1000+ 7.9 грн
2000+ 7.28 грн
5000+ 6.86 грн
Мінімальне замовлення: 11
ES1BHM3_A/H ES1BHM3_A/H Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
ES1BHM3_A/I ES1BHM3_A/I Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
P4SMA10AHE3_A/I P4SMA10AHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA10AHM3_A/H P4SMA10AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA10AHM3_A/I P4SMA10AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMBZ5930B-E3/52 SMBZ5930B-E3/52 Vishay General Semiconductor - Diodes Division smbz5945b.pdf Description: DIODE ZENER 16V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 4314 шт:
термін постачання 21-31 дні (днів)
10+31.93 грн
12+ 26.21 грн
100+ 18.22 грн
Мінімальне замовлення: 10
GF1A-E3/67A GF1A-E3/67A Vishay General Semiconductor - Diodes Division gf1.pdf Description: DIODE GEN PURP 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
V8PAM12HM3/I Vishay General Semiconductor - Diodes Division v8pam12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V8PAM12HM3/I Vishay General Semiconductor - Diodes Division v8pam12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12228 шт:
термін постачання 21-31 дні (днів)
8+38.78 грн
10+ 32.21 грн
100+ 22.4 грн
500+ 16.42 грн
1000+ 13.35 грн
2000+ 11.93 грн
5000+ 11.14 грн
Мінімальне замовлення: 8
V8PA6HM3/I Vishay General Semiconductor - Diodes Division v8pa6.pdf Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V8PA6HM3/I Vishay General Semiconductor - Diodes Division v8pa6.pdf Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4048 шт:
термін постачання 21-31 дні (днів)
8+38.78 грн
10+ 32.21 грн
100+ 22.4 грн
500+ 16.42 грн
1000+ 13.35 грн
2000+ 11.93 грн
Мінімальне замовлення: 8
V8PAM10-M3/I Vishay General Semiconductor - Diodes Division v8pam10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
на замовлення 13272 шт:
термін постачання 21-31 дні (днів)
9+37.25 грн
10+ 30.9 грн
100+ 21.51 грн
500+ 15.76 грн
1000+ 12.81 грн
2000+ 11.45 грн
5000+ 10.69 грн
Мінімальне замовлення: 9
V8PA12HM3/I Vishay General Semiconductor - Diodes Division v8pa12.pdf Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Qualification: AEC-Q101
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)
8+38.78 грн
10+ 32.21 грн
100+ 22.4 грн
500+ 16.42 грн
1000+ 13.35 грн
2000+ 11.93 грн
5000+ 11.14 грн
Мінімальне замовлення: 8
V8PA22-M3/I V8PA22-M3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
V8PA22HM3/H V8PA22HM3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
BZT52C75-E3-08 BZT52C75-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
товар відсутній
BZT52C75-E3-08 BZT52C75-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 75V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
на замовлення 14919 шт:
термін постачання 21-31 дні (днів)
16+19.77 грн
24+ 12.59 грн
100+ 6.16 грн
500+ 4.82 грн
1000+ 3.35 грн
Мінімальне замовлення: 16
BZT55C75-GS08 BZT55C75-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 75V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+2.48 грн
5000+ 2.22 грн
Мінімальне замовлення: 2500
BZT55C75-GS08 BZT55C75-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 75V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10900 шт:
термін постачання 21-31 дні (днів)
20+15.21 грн
31+ 9.74 грн
100+ 4.77 грн
500+ 3.73 грн
1000+ 2.59 грн
Мінімальне замовлення: 20
V20K170-M3/H V20K170-M3/H Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+31.66 грн
3000+ 28.7 грн
Мінімальне замовлення: 1500
V20K170-M3/H V20K170-M3/H Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5+72.23 грн
10+ 56.74 грн
100+ 44.16 грн
500+ 35.12 грн
Мінімальне замовлення: 5
V20K170HM3/I V20K170HM3/I Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V20K170-M3/I V20K170-M3/I Vishay General Semiconductor - Diodes Division v20k170.pdf Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAS170WS-G3-18 BAS170WS-G3-18 Vishay General Semiconductor - Diodes Division bas170ws-g.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
товар відсутній
BAS170WS-G3-18 BAS170WS-G3-18 Vishay General Semiconductor - Diodes Division bas170ws-g.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 9735 шт:
термін постачання 21-31 дні (днів)
11+28.13 грн
16+ 19.04 грн
100+ 9.63 грн
500+ 7.37 грн
1000+ 5.47 грн
2000+ 4.6 грн
5000+ 4.33 грн
Мінімальне замовлення: 11
1.5KE43AHE3_B/C 1.5KE43AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,43V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRF30H45CTHE3_A/P MBRF30H45CTHE3_A/P Vishay General Semiconductor - Diodes Division mbrb30hxxct.pdf Description: 30A,45V,HIGHBARRIER HT SKY REC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
товар відсутній
S10CMHM3/I Vishay General Semiconductor - Diodes Division s10cgjkm.pdf Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
S10CMHM3/I Vishay General Semiconductor - Diodes Division s10cgjkm.pdf Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)
5+61.58 грн
10+ 51.54 грн
100+ 35.68 грн
500+ 27.98 грн
1000+ 23.81 грн
Мінімальне замовлення: 5
1.5KE27CAHE3_B/C 1.5KE27CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,27V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C10-HE3_A-18 BZX84C10-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 10V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C10-HE3_A-08 BZX84C10-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 10V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VESD05A5A-HSF-GS08 VESD05A5A-HSF-GS08 Vishay General Semiconductor - Diodes Division vesd05a5.pdf Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+9.62 грн
Мінімальне замовлення: 3000
VESD05A5A-HSF-GS08 VESD05A5A-HSF-GS08 Vishay General Semiconductor - Diodes Division vesd05a5.pdf Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 14603 шт:
термін постачання 21-31 дні (днів)
9+34.21 грн
11+ 28.04 грн
100+ 19.46 грн
500+ 14.26 грн
1000+ 11.59 грн
Мінімальне замовлення: 9
VESD05A6A-HAF-GS08 VESD05A6A-HAF-GS08 Vishay General Semiconductor - Diodes Division vesd05a6.pdf Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+13.69 грн
6000+ 12.33 грн
Мінімальне замовлення: 3000
VESD05A6A-HAF-GS08 VESD05A6A-HAF-GS08 Vishay General Semiconductor - Diodes Division vesd05a6.pdf Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 14944 шт:
термін постачання 21-31 дні (днів)
8+38.78 грн
10+ 31.92 грн
100+ 23.81 грн
500+ 17.56 грн
1000+ 13.57 грн
Мінімальне замовлення: 8
VESD05A8C-HNH-GS08 VESD05A8C-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+13.73 грн
6000+ 12.55 грн
9000+ 11.65 грн
Мінімальне замовлення: 3000
VESD05A8C-HNH-GS08 VESD05A8C-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 14800 шт:
термін постачання 21-31 дні (днів)
8+41.06 грн
10+ 33.53 грн
100+ 23.31 грн
500+ 17.08 грн
1000+ 13.88 грн
Мінімальне замовлення: 8
VESD05A8B-HNH-GS08 VESD05A8B-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+13.55 грн
6000+ 12.38 грн
9000+ 11.5 грн
Мінімальне замовлення: 3000
VESD05A8B-HNH-GS08 VESD05A8B-HNH-GS08 Vishay General Semiconductor - Diodes Division vesd05a8.pdf Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
8+40.3 грн
10+ 33.09 грн
100+ 23 грн
500+ 16.85 грн
1000+ 13.69 грн
Мінімальне замовлення: 8
FESB16CT-E3/81 FESB16CT-E3/81 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
3+114.81 грн
10+ 91.88 грн
100+ 73.16 грн
Мінімальне замовлення: 3
BZG04-180-HM3-08 BZG04-180-HM3-08 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 220V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB33AHE3_B/H p6smb.pdf
P6SMB33AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,33V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB33AHM3_B/H p6smb.pdf
P6SMB33AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,33V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C4V3-HE3_A-18 bzx84_series.pdf
BZX84C4V3-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C4V3-HE3_A-08 bzx84_series.pdf
BZX84C4V3-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5KE82AHE3_B/C 15ke.pdf
1.5KE82AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,82V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB1635HE3_B/P mbrf16xx.pdf
MBRB1635HE3_B/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB1635HE3_B/I mbrf16xx.pdf
MBRB1635HE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H35HE3_B/P MBR(F,B)16H35 - 16H60.pdf
MBRB16H35HE3_B/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H45HE3_B/P MBR(F,B)16H35 - 16H60.pdf
MBRB16H45HE3_B/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H60HE3_B/P mbrb16h35_45_60.pdf
MBRB16H60HE3_B/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H35HE3_B/I MBR(F,B)16H35 - 16H60.pdf
MBRB16H35HE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H45HE3_B/I MBR(F,B)16H35 - 16H60.pdf
MBRB16H45HE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB16H60HE3_B/I mbrb16h35_45_60.pdf
MBRB16H60HE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRB30H45CTHE3_B/I mbr30h100ct.pdf
MBRB30H45CTHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+87.55 грн
1600+ 71.53 грн
Мінімальне замовлення: 800
MBRB30H45CTHE3_B/I mbr30h100ct.pdf
MBRB30H45CTHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+156.62 грн
10+ 125.12 грн
100+ 99.63 грн
Мінімальне замовлення: 2
MBRB745-E3/45 mbr7xx.pdf
MBRB745-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+80.59 грн
10+ 63.62 грн
100+ 49.46 грн
500+ 39.34 грн
1000+ 32.05 грн
Мінімальне замовлення: 4
6DFN51A-M3/I
6DFN51A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%, DFN3820A TVS
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14000+6.95 грн
Мінімальне замовлення: 14000
6DFN51A-M3/I
6DFN51A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,51V 5%, DFN3820A TVS
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.65 грн
14+ 22.33 грн
100+ 13.38 грн
500+ 11.62 грн
1000+ 7.9 грн
2000+ 7.28 грн
5000+ 6.86 грн
Мінімальне замовлення: 11
ES1BHM3_A/H es1.pdf
ES1BHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
ES1BHM3_A/I es1.pdf
ES1BHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
P4SMA10AHE3_A/I p4sma.pdf
P4SMA10AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA10AHM3_A/H p4sma.pdf
P4SMA10AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA10AHM3_A/I p4sma.pdf
P4SMA10AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMBZ5930B-E3/52 smbz5945b.pdf
SMBZ5930B-E3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 4314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.93 грн
12+ 26.21 грн
100+ 18.22 грн
Мінімальне замовлення: 10
GF1A-E3/67A gf1.pdf
GF1A-E3/67A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
V8PAM12HM3/I v8pam12.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V8PAM12HM3/I v8pam12.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 730pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.78 грн
10+ 32.21 грн
100+ 22.4 грн
500+ 16.42 грн
1000+ 13.35 грн
2000+ 11.93 грн
5000+ 11.14 грн
Мінімальне замовлення: 8
V8PA6HM3/I v8pa6.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V8PA6HM3/I v8pa6.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4048 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.78 грн
10+ 32.21 грн
100+ 22.4 грн
500+ 16.42 грн
1000+ 13.35 грн
2000+ 11.93 грн
Мінімальне замовлення: 8
V8PAM10-M3/I v8pam10.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
на замовлення 13272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+37.25 грн
10+ 30.9 грн
100+ 21.51 грн
500+ 15.76 грн
1000+ 12.81 грн
2000+ 11.45 грн
5000+ 10.69 грн
Мінімальне замовлення: 9
V8PA12HM3/I v8pa12.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Qualification: AEC-Q101
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.78 грн
10+ 32.21 грн
100+ 22.4 грн
500+ 16.42 грн
1000+ 13.35 грн
2000+ 11.93 грн
5000+ 11.14 грн
Мінімальне замовлення: 8
V8PA22-M3/I v8pa22.pdf
V8PA22-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
V8PA22HM3/H v8pa22.pdf
V8PA22HM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
BZT52C75-E3-08 bzt52_series.pdf
BZT52C75-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
товар відсутній
BZT52C75-E3-08 bzt52_series.pdf
BZT52C75-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
на замовлення 14919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+19.77 грн
24+ 12.59 грн
100+ 6.16 грн
500+ 4.82 грн
1000+ 3.35 грн
Мінімальне замовлення: 16
BZT55C75-GS08 bzt55.pdf
BZT55C75-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+2.48 грн
5000+ 2.22 грн
Мінімальне замовлення: 2500
BZT55C75-GS08 bzt55.pdf
BZT55C75-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.21 грн
31+ 9.74 грн
100+ 4.77 грн
500+ 3.73 грн
1000+ 2.59 грн
Мінімальне замовлення: 20
V20K170-M3/H v20k170.pdf
V20K170-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+31.66 грн
3000+ 28.7 грн
Мінімальне замовлення: 1500
V20K170-M3/H v20k170.pdf
V20K170-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+72.23 грн
10+ 56.74 грн
100+ 44.16 грн
500+ 35.12 грн
Мінімальне замовлення: 5
V20K170HM3/I v20k170.pdf
V20K170HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V20K170-M3/I v20k170.pdf
V20K170-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 170V 3.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAS170WS-G3-18 bas170ws-g.pdf
BAS170WS-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
товар відсутній
BAS170WS-G3-18 bas170ws-g.pdf
BAS170WS-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 9735 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.13 грн
16+ 19.04 грн
100+ 9.63 грн
500+ 7.37 грн
1000+ 5.47 грн
2000+ 4.6 грн
5000+ 4.33 грн
Мінімальне замовлення: 11
1.5KE43AHE3_B/C 15ke.pdf
1.5KE43AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,43V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRF30H45CTHE3_A/P mbrb30hxxct.pdf
MBRF30H45CTHE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: 30A,45V,HIGHBARRIER HT SKY REC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
товар відсутній
S10CMHM3/I s10cgjkm.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
S10CMHM3/I s10cgjkm.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+61.58 грн
10+ 51.54 грн
100+ 35.68 грн
500+ 27.98 грн
1000+ 23.81 грн
Мінімальне замовлення: 5
1.5KE27CAHE3_B/C 15ke.pdf
1.5KE27CAHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,27V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C10-HE3_A-18 bzx84_series.pdf
BZX84C10-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C10-HE3_A-08 bzx84_series.pdf
BZX84C10-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VESD05A5A-HSF-GS08 vesd05a5.pdf
VESD05A5A-HSF-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.62 грн
Мінімальне замовлення: 3000
VESD05A5A-HSF-GS08 vesd05a5.pdf
VESD05A5A-HSF-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 14603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.21 грн
11+ 28.04 грн
100+ 19.46 грн
500+ 14.26 грн
1000+ 11.59 грн
Мінімальне замовлення: 9
VESD05A6A-HAF-GS08 vesd05a6.pdf
VESD05A6A-HAF-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+13.69 грн
6000+ 12.33 грн
Мінімальне замовлення: 3000
VESD05A6A-HAF-GS08 vesd05a6.pdf
VESD05A6A-HAF-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 14944 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.78 грн
10+ 31.92 грн
100+ 23.81 грн
500+ 17.56 грн
1000+ 13.57 грн
Мінімальне замовлення: 8
VESD05A8C-HNH-GS08 vesd05a8.pdf
VESD05A8C-HNH-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+13.73 грн
6000+ 12.55 грн
9000+ 11.65 грн
Мінімальне замовлення: 3000
VESD05A8C-HNH-GS08 vesd05a8.pdf
VESD05A8C-HNH-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 33W
Power Line Protection: No
на замовлення 14800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.06 грн
10+ 33.53 грн
100+ 23.31 грн
500+ 17.08 грн
1000+ 13.88 грн
Мінімальне замовлення: 8
VESD05A8B-HNH-GS08 vesd05a8.pdf
VESD05A8B-HNH-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+13.55 грн
6000+ 12.38 грн
9000+ 11.5 грн
Мінімальне замовлення: 3000
VESD05A8B-HNH-GS08 vesd05a8.pdf
VESD05A8B-HNH-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 13VC LLP1713-9L
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 52W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.3 грн
10+ 33.09 грн
100+ 23 грн
500+ 16.85 грн
1000+ 13.69 грн
Мінімальне замовлення: 8
FESB16CT-E3/81 fes16jt.pdf
FESB16CT-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.81 грн
10+ 91.88 грн
100+ 73.16 грн
Мінімальне замовлення: 3
BZG04-180-HM3-08 bzg04-m-series.pdf
BZG04-180-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 220V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 180 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
Обрати Сторінку:    << Попередня Сторінка ]  1 62 124 186 248 310 372 434 496 558 576 577 578 579 580 581 582 583 584 585 586 620 628  Наступна Сторінка >> ]