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VESD05A4A-HS4-GS08 VESD05A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division VESD05A4A-HS4.pdf Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
VEMI65AB-HCI-GS08 VEMI65AB-HCI-GS08 Vishay General Semiconductor - Diodes Division vemi65ab.pdf Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+15.82 грн
6000+ 14.22 грн
Мінімальне замовлення: 3000
VESD09A4A-HS4-GS08 VESD09A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division vesd09a4.pdf Description: TVS DIODE 9VWM 23VC LLP1010-5L
товар відсутній
VBUS051BD-HD1-GS08 VBUS051BD-HD1-GS08 Vishay General Semiconductor - Diodes Division vbus051bdhd1.pdf Description: TVS DIODE 5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 23780 шт:
термін постачання 21-31 дні (днів)
12+25.63 грн
17+ 17.5 грн
100+ 8.83 грн
500+ 7.35 грн
1000+ 5.72 грн
2000+ 5.12 грн
Мінімальне замовлення: 12
VCUT0505B-HD1-GS08 VCUT0505B-HD1-GS08 Vishay General Semiconductor - Diodes Division vcut0505.pdf Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
на замовлення 47149 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
15+ 20.4 грн
100+ 10.29 грн
500+ 7.88 грн
1000+ 5.84 грн
2000+ 4.92 грн
Мінімальне замовлення: 10
VCUT0714A-HD1-GS08 VCUT0714A-HD1-GS08 Vishay General Semiconductor - Diodes Division vcut0714.pdf Description: TVS DIODE 7VWM 14VWM LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RS-485
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V, 14V
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V, 14.5V
Voltage - Clamping (Max) @ Ipp: 17V, 30V
Power - Peak Pulse: 54W, 63W
Power Line Protection: No
на замовлення 22347 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
15+ 20.54 грн
100+ 10.39 грн
500+ 7.96 грн
1000+ 5.9 грн
2000+ 4.97 грн
Мінімальне замовлення: 10
VESD03A1B-HD1-GS08 VESD03A1B-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd03a1.pdf Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
на замовлення 43831 шт:
термін постачання 21-31 дні (днів)
12+26.39 грн
17+ 17.64 грн
100+ 8.92 грн
500+ 7.42 грн
1000+ 5.77 грн
2000+ 5.17 грн
Мінімальне замовлення: 12
VESD05A1A-HD1-GS08 VESD05A1A-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
на замовлення 28138 шт:
термін постачання 21-31 дні (днів)
12+25.63 грн
17+ 17.5 грн
100+ 8.83 грн
500+ 7.35 грн
1000+ 5.72 грн
2000+ 5.12 грн
Мінімальне замовлення: 12
VESD05A1B-HD1-GS08 VESD05A1B-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
на замовлення 29218 шт:
термін постачання 21-31 дні (днів)
12+25.63 грн
17+ 17.5 грн
100+ 8.83 грн
500+ 7.35 грн
1000+ 5.72 грн
2000+ 5.12 грн
Мінімальне замовлення: 12
VESD05A4A-HS4-GS08 VESD05A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division VESD05A4A-HS4.pdf Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
VEMI65AB-HCI-GS08 VEMI65AB-HCI-GS08 Vishay General Semiconductor - Diodes Division vemi65ab.pdf Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Cut Tape (CT)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
на замовлення 14375 шт:
термін постачання 21-31 дні (днів)
10+30.42 грн
25+ 24.89 грн
50+ 20.96 грн
100+ 19.06 грн
250+ 18.11 грн
500+ 15.94 грн
1000+ 15 грн
Мінімальне замовлення: 10
VESD09A4A-HS4-GS08 VESD09A4A-HS4-GS08 Vishay General Semiconductor - Diodes Division vesd09a4.pdf Description: TVS DIODE 9VWM 23VC LLP1010-5L
товар відсутній
VBUS054B-HSF-GS08 VBUS054B-HSF-GS08 Vishay General Semiconductor - Diodes Division vbus054b-hsf.pdf Description: TVS DIODE 5VWM 15VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: Yes
на замовлення 19791 шт:
термін постачання 21-31 дні (днів)
7+45.23 грн
10+ 37.75 грн
100+ 26.15 грн
500+ 20.51 грн
1000+ 17.45 грн
Мінімальне замовлення: 7
VESD12A1C-02Z-GS08 VESD12A1C-02Z-GS08 Vishay General Semiconductor - Diodes Division VESD12A1C-02Z.pdf Description: TVS DIODE 12VWM 23VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 92W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
BU10065S-E3/45 BU10065S-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU-5S
товар відсутній
BU1006A5S-E3/45 BU1006A5S-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU-5S
товар відсутній
BU1006A-E3/45 BU1006A-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BU1006A-E3/51 BU1006A-E3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BU1006-E3/45 BU1006-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1006-E3/51 BU1006-E3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1010A5S-E3/45 BU1010A5S-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU-5S
товар відсутній
BU1010A-E3/45 BU1010A-E3/45 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010A-E3/51 BU1010A-E3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010-E3/45 BU1010-E3/45 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010-E3/51 BU1010-E3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU12065S-E3/45 BU12065S-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 3.4A BU-5S
товар відсутній
BU1206-E3/45 BU1206-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
2+158.31 грн
10+ 136.62 грн
100+ 109.84 грн
Мінімальне замовлення: 2
BU1206-E3/51 BU1206-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 3.4A BU
товар відсутній
BU12085S-E3/45 BU12085S-E3/45 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU-5S
товар відсутній
BU1208-E3/51 BU1208-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
товар відсутній
BU15085S-E3/45 BU15085S-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU1508-E3/45 BU1508-E3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
2+197.51 грн
20+ 159.71 грн
100+ 129.22 грн
500+ 107.8 грн
Мінімальне замовлення: 2
BU1508-E3/51 BU1508-E3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2006-E3/45 BU2006-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
2+214.1 грн
10+ 185.63 грн
100+ 149.21 грн
500+ 115.04 грн
Мінімальне замовлення: 2
BU20085S-E3/45 BU20085S-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2008-E3/45 BU2008-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 644 шт:
термін постачання 21-31 дні (днів)
3+143.24 грн
10+ 114.63 грн
100+ 91.22 грн
Мінімальне замовлення: 3
BU2008-E3/51 BU2008-E3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU20105S-E3/45 BU20105S-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU2010-E3/45 BU2010-E3/45 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)
2+245.76 грн
20+ 198.58 грн
100+ 160.65 грн
500+ 134.01 грн
Мінімальне замовлення: 2
BU2010-E3/51 BU2010-E3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1658 шт:
термін постачання 21-31 дні (днів)
2+245.76 грн
10+ 198.55 грн
250+ 151.72 грн
500+ 134.01 грн
1000+ 114.74 грн
Мінімальне замовлення: 2
BU25065S-E3/45 BU25065S-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU2506-E3/45 BU2506-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
2+241.99 грн
20+ 195.79 грн
100+ 158.4 грн
500+ 132.13 грн
Мінімальне замовлення: 2
BU2506-E3/51 BU2506-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
3+139.47 грн
10+ 112.52 грн
250+ 89.05 грн
Мінімальне замовлення: 3
BU25085S-E3/45 BU25085S-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU2508-E3/45 BU2508-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
2+170.38 грн
10+ 137.64 грн
25+ 129.92 грн
80+ 104.49 грн
230+ 102.21 грн
Мінімальне замовлення: 2
BU2508-E3/51 BU2508-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU2510-E3/45 BU2510-E3/45 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
2+211.08 грн
10+ 182.14 грн
100+ 149.2 грн
500+ 119.2 грн
Мінімальне замовлення: 2
BU2510-E3/51 BU2510-E3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 1KV 3.5A BU
товар відсутній
GL41T-E3/1 GL41T-E3/1 Vishay General Semiconductor - Diodes Division BYM10-50 - 10-1000, GL41A-Y_Rev30.pdf Description: DIODE GEN PURP 1.3KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
товар відсутній
VS-100BGQ100 VS-100BGQ100 Vishay General Semiconductor - Diodes Division 100BGQ100.pdf Description: DIODE SCHOTT 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
SS10P4-M3/86A SS10P4-M3/86A Vishay General Semiconductor - Diodes Division ss10p4.pdf Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
1500+24.8 грн
3000+ 21.27 грн
7500+ 20.15 грн
10500+ 17.51 грн
Мінімальне замовлення: 1500
SS3P4L-M3/86A SS3P4L-M3/86A Vishay General Semiconductor - Diodes Division ss3p4l.pdf Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+16.18 грн
Мінімальне замовлення: 1500
SS3P6L-M3/86A SS3P6L-M3/86A Vishay General Semiconductor - Diodes Division ss3p6l.pdf Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
1500+16.18 грн
3000+ 13.93 грн
7500+ 13.22 грн
10500+ 11.52 грн
Мінімальне замовлення: 1500
SS5P10-M3/86A SS5P10-M3/86A Vishay General Semiconductor - Diodes Division ss5p10.pdf Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
на замовлення 106500 шт:
термін постачання 21-31 дні (днів)
1500+12.36 грн
Мінімальне замовлення: 1500
SS5P3-M3/86A SS5P3-M3/86A Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 30V 5A TO277A
товар відсутній
SS5P6-M3/86A SS5P6-M3/86A Vishay General Semiconductor - Diodes Division ss5p6.pdf Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
1500+16.02 грн
3000+ 13.79 грн
7500+ 13.09 грн
10500+ 11.4 грн
37500+ 11.14 грн
Мінімальне замовлення: 1500
SS8P2L-M3/86A SS8P2L-M3/86A Vishay General Semiconductor - Diodes Division ss8p3l.pdf Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товар відсутній
SS8P3L-M3/86A SS8P3L-M3/86A Vishay General Semiconductor - Diodes Division ss8p3l.pdf Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+17.29 грн
3000+ 14.88 грн
Мінімальне замовлення: 1500
SS8PH10-M3/86A SS8PH10-M3/86A Vishay General Semiconductor - Diodes Division ss8ph10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
1500+12.97 грн
Мінімальне замовлення: 1500
V10P10-M3/86A V10P10-M3/86A Vishay General Semiconductor - Diodes Division v10p10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
1500+22.85 грн
Мінімальне замовлення: 1500
VESD05A4A-HS4-GS08 VESD05A4A-HS4.pdf
VESD05A4A-HS4-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
VEMI65AB-HCI-GS08 vemi65ab.pdf
VEMI65AB-HCI-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+15.82 грн
6000+ 14.22 грн
Мінімальне замовлення: 3000
VESD09A4A-HS4-GS08 vesd09a4.pdf
VESD09A4A-HS4-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 23VC LLP1010-5L
товар відсутній
VBUS051BD-HD1-GS08 vbus051bdhd1.pdf
VBUS051BD-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 23780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.63 грн
17+ 17.5 грн
100+ 8.83 грн
500+ 7.35 грн
1000+ 5.72 грн
2000+ 5.12 грн
Мінімальне замовлення: 12
VCUT0505B-HD1-GS08 vcut0505.pdf
VCUT0505B-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
на замовлення 47149 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
15+ 20.4 грн
100+ 10.29 грн
500+ 7.88 грн
1000+ 5.84 грн
2000+ 4.92 грн
Мінімальне замовлення: 10
VCUT0714A-HD1-GS08 vcut0714.pdf
VCUT0714A-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 14VWM LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RS-485
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V, 14V
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V, 14.5V
Voltage - Clamping (Max) @ Ipp: 17V, 30V
Power - Peak Pulse: 54W, 63W
Power Line Protection: No
на замовлення 22347 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
15+ 20.54 грн
100+ 10.39 грн
500+ 7.96 грн
1000+ 5.9 грн
2000+ 4.97 грн
Мінімальне замовлення: 10
VESD03A1B-HD1-GS08 vesd03a1.pdf
VESD03A1B-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
на замовлення 43831 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.39 грн
17+ 17.64 грн
100+ 8.92 грн
500+ 7.42 грн
1000+ 5.77 грн
2000+ 5.17 грн
Мінімальне замовлення: 12
VESD05A1A-HD1-GS08 vesd05a1.pdf
VESD05A1A-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
на замовлення 28138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.63 грн
17+ 17.5 грн
100+ 8.83 грн
500+ 7.35 грн
1000+ 5.72 грн
2000+ 5.12 грн
Мінімальне замовлення: 12
VESD05A1B-HD1-GS08 vesd05a1.pdf
VESD05A1B-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
на замовлення 29218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.63 грн
17+ 17.5 грн
100+ 8.83 грн
500+ 7.35 грн
1000+ 5.72 грн
2000+ 5.12 грн
Мінімальне замовлення: 12
VESD05A4A-HS4-GS08 VESD05A4A-HS4.pdf
VESD05A4A-HS4-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
VEMI65AB-HCI-GS08 vemi65ab.pdf
VEMI65AB-HCI-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Cut Tape (CT)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
на замовлення 14375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.42 грн
25+ 24.89 грн
50+ 20.96 грн
100+ 19.06 грн
250+ 18.11 грн
500+ 15.94 грн
1000+ 15 грн
Мінімальне замовлення: 10
VESD09A4A-HS4-GS08 vesd09a4.pdf
VESD09A4A-HS4-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 23VC LLP1010-5L
товар відсутній
VBUS054B-HSF-GS08 vbus054b-hsf.pdf
VBUS054B-HSF-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 15VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: Yes
на замовлення 19791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.23 грн
10+ 37.75 грн
100+ 26.15 грн
500+ 20.51 грн
1000+ 17.45 грн
Мінімальне замовлення: 7
VESD12A1C-02Z-GS08 VESD12A1C-02Z.pdf
VESD12A1C-02Z-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 23VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 92W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
BU10065S-E3/45 bu1006.pdf
BU10065S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
товар відсутній
BU1006A5S-E3/45 bu1006a.pdf
BU1006A5S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU-5S
товар відсутній
BU1006A-E3/45 bu1006a.pdf
BU1006A-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BU1006A-E3/51 bu1006a.pdf
BU1006A-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BU1006-E3/45 bu1006.pdf
BU1006-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1006-E3/51 bu1006.pdf
BU1006-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1010A5S-E3/45 bu1006a.pdf
BU1010A5S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU-5S
товар відсутній
BU1010A-E3/45 bu1006a.pdf
BU1010A-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010A-E3/51 bu1006a.pdf
BU1010A-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010-E3/45 bu1006.pdf
BU1010-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010-E3/51 bu1006.pdf
BU1010-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU12065S-E3/45 bu1206.pdf
BU12065S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
товар відсутній
BU1206-E3/45 bu1206.pdf
BU1206-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+158.31 грн
10+ 136.62 грн
100+ 109.84 грн
Мінімальне замовлення: 2
BU1206-E3/51 bu1206.pdf
BU1206-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU
товар відсутній
BU12085S-E3/45 bu1206.pdf
BU12085S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
товар відсутній
BU1208-E3/51 bu1206.pdf
BU1208-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
товар відсутній
BU15085S-E3/45 bu1506.pdf
BU15085S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU1508-E3/45 bu1506.pdf
BU1508-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+197.51 грн
20+ 159.71 грн
100+ 129.22 грн
500+ 107.8 грн
Мінімальне замовлення: 2
BU1508-E3/51 bu1206.pdf
BU1508-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2006-E3/45 bu2006.pdf
BU2006-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+214.1 грн
10+ 185.63 грн
100+ 149.21 грн
500+ 115.04 грн
Мінімальне замовлення: 2
BU20085S-E3/45 bu2006.pdf
BU20085S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2008-E3/45 bu2006.pdf
BU2008-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 644 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+143.24 грн
10+ 114.63 грн
100+ 91.22 грн
Мінімальне замовлення: 3
BU2008-E3/51 bu2006.pdf
BU2008-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU20105S-E3/45 bu2006.pdf
BU20105S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU2010-E3/45 bu2006.pdf
BU2010-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+245.76 грн
20+ 198.58 грн
100+ 160.65 грн
500+ 134.01 грн
Мінімальне замовлення: 2
BU2010-E3/51 bu2006.pdf
BU2010-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1658 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+245.76 грн
10+ 198.55 грн
250+ 151.72 грн
500+ 134.01 грн
1000+ 114.74 грн
Мінімальне замовлення: 2
BU25065S-E3/45 bu2506.pdf
BU25065S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU2506-E3/45 bu2506.pdf
BU2506-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+241.99 грн
20+ 195.79 грн
100+ 158.4 грн
500+ 132.13 грн
Мінімальне замовлення: 2
BU2506-E3/51 bu2506.pdf
BU2506-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+139.47 грн
10+ 112.52 грн
250+ 89.05 грн
Мінімальне замовлення: 3
BU25085S-E3/45 bu2506.pdf
BU25085S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Packaging: Tube
Package / Case: 4-SIP, BU-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU2508-E3/45 bu2506.pdf
BU2508-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+170.38 грн
10+ 137.64 грн
25+ 129.92 грн
80+ 104.49 грн
230+ 102.21 грн
Мінімальне замовлення: 2
BU2508-E3/51 bu2506.pdf
BU2508-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU2510-E3/45 bu2506.pdf
BU2510-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+211.08 грн
10+ 182.14 грн
100+ 149.2 грн
500+ 119.2 грн
Мінімальне замовлення: 2
BU2510-E3/51 bu2506.pdf
BU2510-E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
товар відсутній
GL41T-E3/1 BYM10-50 - 10-1000, GL41A-Y_Rev30.pdf
GL41T-E3/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
товар відсутній
VS-100BGQ100 100BGQ100.pdf
VS-100BGQ100
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
SS10P4-M3/86A ss10p4.pdf
SS10P4-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+24.8 грн
3000+ 21.27 грн
7500+ 20.15 грн
10500+ 17.51 грн
Мінімальне замовлення: 1500
SS3P4L-M3/86A ss3p4l.pdf
SS3P4L-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+16.18 грн
Мінімальне замовлення: 1500
SS3P6L-M3/86A ss3p6l.pdf
SS3P6L-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+16.18 грн
3000+ 13.93 грн
7500+ 13.22 грн
10500+ 11.52 грн
Мінімальне замовлення: 1500
SS5P10-M3/86A ss5p10.pdf
SS5P10-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
на замовлення 106500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+12.36 грн
Мінімальне замовлення: 1500
SS5P3-M3/86A ss5p4.pdf
SS5P3-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A TO277A
товар відсутній
SS5P6-M3/86A ss5p6.pdf
SS5P6-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+16.02 грн
3000+ 13.79 грн
7500+ 13.09 грн
10500+ 11.4 грн
37500+ 11.14 грн
Мінімальне замовлення: 1500
SS8P2L-M3/86A ss8p3l.pdf
SS8P2L-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товар відсутній
SS8P3L-M3/86A ss8p3l.pdf
SS8P3L-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+17.29 грн
3000+ 14.88 грн
Мінімальне замовлення: 1500
SS8PH10-M3/86A ss8ph10.pdf
SS8PH10-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+12.97 грн
Мінімальне замовлення: 1500
V10P10-M3/86A v10p10.pdf
V10P10-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+22.85 грн
Мінімальне замовлення: 1500
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