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VS-C4PH6006L-N3 VS-C4PH6006L-N3 Vishay General Semiconductor - Diodes Division vs-c4ph6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
товар відсутній
VS-E5PH6006LHN3 VS-E5PH6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5ph6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+280.04 грн
10+ 242.33 грн
100+ 198.53 грн
500+ 158.61 грн
Мінімальне замовлення: 2
VS-E4PH6006L-N-S1 Vishay General Semiconductor - Diodes Division Description: DIODE 60A 600V TO220AD-2
товар відсутній
BZX384C22-E3-08 BZX384C22-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 22V 200MW SOD323
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+3.16 грн
6000+ 2.64 грн
Мінімальне замовлення: 3000
BZX384C22-E3-08 BZX384C22-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 22V 200MW SOD323
на замовлення 14978 шт:
термін постачання 21-31 дні (днів)
17+18.31 грн
21+ 14.18 грн
100+ 7.53 грн
500+ 4.65 грн
1000+ 3.16 грн
Мінімальне замовлення: 17
BZX384C20-E3-08 BZX384C20-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 20V 200MW SOD323
товар відсутній
BZX384C20-E3-08 BZX384C20-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 20V 200MW SOD323
на замовлення 2019 шт:
термін постачання 21-31 дні (днів)
17+18.31 грн
21+ 14.55 грн
100+ 7.71 грн
500+ 4.76 грн
1000+ 3.24 грн
Мінімальне замовлення: 17
SMAJ14AHM3_A/H SMAJ14AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
SMAJ14AHM3_A/I SMAJ14AHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
MMSZ4692-E3-08 MMSZ4692-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+3.18 грн
6000+ 2.84 грн
9000+ 2.35 грн
Мінімальне замовлення: 3000
MMSZ4692-E3-08 MMSZ4692-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
на замовлення 24563 шт:
термін постачання 21-31 дні (днів)
16+19.08 грн
24+ 12.49 грн
100+ 6.09 грн
500+ 4.77 грн
1000+ 3.31 грн
Мінімальне замовлення: 16
GLL4742A-E3/96 GLL4742A-E3/96 Vishay General Semiconductor - Diodes Division gll4735.pdf Description: DIODE ZENER 12V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF)
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
товар відсутній
GLL4742A-E3/96 GLL4742A-E3/96 Vishay General Semiconductor - Diodes Division gll4735.pdf Description: DIODE ZENER 12V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF)
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
товар відсутній
SMCJ28AHM3_A/H SMCJ28AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ZMY6V2-GS18 ZMY6V2-GS18 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 6.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Qualification: AEC-Q101
товар відсутній
ZMY6V2-GS18 ZMY6V2-GS18 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 6.2V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Qualification: AEC-Q101
на замовлення 845 шт:
термін постачання 21-31 дні (днів)
11+29 грн
14+ 21.82 грн
100+ 13.1 грн
500+ 11.38 грн
Мінімальне замовлення: 11
BZX884B18L-HG3-08 BZX884B18L-HG3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: ZENER DIODE DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товар відсутній
BZX884B18L-HG3-08 BZX884B18L-HG3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: ZENER DIODE DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 7555 шт:
термін постачання 21-31 дні (днів)
12+27.47 грн
14+ 21.68 грн
100+ 11.48 грн
500+ 7.08 грн
1000+ 4.82 грн
2000+ 4.35 грн
5000+ 3.72 грн
Мінімальне замовлення: 12
BZX884B18L-G3-08 BZX884B18L-G3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: ZENER DIODE DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.89 грн
Мінімальне замовлення: 10000
BZX884B18L-G3-08 BZX884B18L-G3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: ZENER DIODE DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 26313 шт:
термін постачання 21-31 дні (днів)
14+22.89 грн
20+ 14.77 грн
100+ 7.21 грн
500+ 5.64 грн
1000+ 3.92 грн
2000+ 3.4 грн
5000+ 3.1 грн
Мінімальне замовлення: 14
SMC5K30CA-M3/H SMC5K30CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
SMC5K30CA-M3/H SMC5K30CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
SMC5K54CA-M3/H SMC5K54CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
SMC5K54CA-M3/H SMC5K54CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
BY229B-200-E3/81 BY229B-200-E3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-200HE3/81 BY229B-200HE3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-400-E3/81 BY229B-400-E3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-400HE3/81 BY229B-400HE3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-600-E3/81 BY229B-600-E3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-600HE3/81 BY229B-600HE3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-800-E3/81 BY229B-800-E3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229B-800HE3/81 BY229B-800HE3/81 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229-200-E3/45 BY229-200-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229-200HE3/45 BY229-200HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229-600-E3/45 BY229-600-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229-600HE3/45 BY229-600HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229-800-E3/45 BY229-800-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229-800HE3/45 BY229-800HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229B-200-E3/45 BY229B-200-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-200HE3/45 BY229B-200HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-400-E3/45 BY229B-400-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-400HE3/45 BY229B-400HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-600-E3/45 BY229B-600-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-600HE3/45 BY229B-600HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-800-E3/45 BY229B-800-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229B-800HE3/45 BY229B-800HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229X-200-E3/45 BY229X-200-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200 - BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229X-200HE3/45 BY229X-200HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229X-400-E3/45 BY229X-400-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229X-400HE3/45 BY229X-400HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229X-600-E3/45 BY229X-600-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200 - BY229(X,B)-800.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229X-600HE3/45 BY229X-600HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200 - BY229(X,B)-800.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229X-800-E3/45 BY229X-800-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200 - BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229X-800HE3/45 BY229X-800HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BYVB32-200HE3_A/I BYVB32-200HE3_A/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BYVB32-200HE3_A/P BYVB32-200HE3_A/P Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
товар відсутній
SMAJ60A-E3/5A SMAJ60A-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJ60A-E3/5A SMAJ60A-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 3899 шт:
термін постачання 21-31 дні (днів)
10+30.52 грн
15+ 20.72 грн
100+ 10.43 грн
500+ 8.68 грн
1000+ 6.75 грн
2000+ 6.05 грн
Мінімальне замовлення: 10
ES07D-GS18 ES07D-GS18 Vishay General Semiconductor - Diodes Division es07b.pdf Description: DIODE GP 200V 500MA DO219AB
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
10000+8.06 грн
Мінімальне замовлення: 10000
ES07D-GS18 ES07D-GS18 Vishay General Semiconductor - Diodes Division es07b.pdf Description: DIODE GP 200V 500MA DO219AB
на замовлення 190575 шт:
термін постачання 21-31 дні (днів)
11+29.76 грн
13+ 23.44 грн
100+ 15.94 грн
500+ 11.22 грн
1000+ 8.42 грн
2000+ 7.72 грн
5000+ 7.16 грн
Мінімальне замовлення: 11
VS-C4PH6006L-N3 vs-c4ph6006l-n3.pdf
VS-C4PH6006L-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
товар відсутній
VS-E5PH6006LHN3 vs-e5ph6006l-n3.pdf
VS-E5PH6006LHN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+280.04 грн
10+ 242.33 грн
100+ 198.53 грн
500+ 158.61 грн
Мінімальне замовлення: 2
VS-E4PH6006L-N-S1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 60A 600V TO220AD-2
товар відсутній
BZX384C22-E3-08 bzx384.pdf
BZX384C22-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 200MW SOD323
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.16 грн
6000+ 2.64 грн
Мінімальне замовлення: 3000
BZX384C22-E3-08 bzx384.pdf
BZX384C22-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 200MW SOD323
на замовлення 14978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+18.31 грн
21+ 14.18 грн
100+ 7.53 грн
500+ 4.65 грн
1000+ 3.16 грн
Мінімальне замовлення: 17
BZX384C20-E3-08 bzx384.pdf
BZX384C20-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
товар відсутній
BZX384C20-E3-08 bzx384.pdf
BZX384C20-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
на замовлення 2019 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+18.31 грн
21+ 14.55 грн
100+ 7.71 грн
500+ 4.76 грн
1000+ 3.24 грн
Мінімальне замовлення: 17
SMAJ14AHM3_A/H smaj50a.pdf
SMAJ14AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
SMAJ14AHM3_A/I smaj50a.pdf
SMAJ14AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
MMSZ4692-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4692-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.18 грн
6000+ 2.84 грн
9000+ 2.35 грн
Мінімальне замовлення: 3000
MMSZ4692-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4692-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
на замовлення 24563 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+19.08 грн
24+ 12.49 грн
100+ 6.09 грн
500+ 4.77 грн
1000+ 3.31 грн
Мінімальне замовлення: 16
GLL4742A-E3/96 gll4735.pdf
GLL4742A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF)
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
товар відсутній
GLL4742A-E3/96 gll4735.pdf
GLL4742A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF)
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
товар відсутній
SMCJ28AHM3_A/H smcj.pdf
SMCJ28AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ZMY6V2-GS18 zmy3v9.pdf
ZMY6V2-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Qualification: AEC-Q101
товар відсутній
ZMY6V2-GS18 zmy3v9.pdf
ZMY6V2-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Qualification: AEC-Q101
на замовлення 845 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29 грн
14+ 21.82 грн
100+ 13.1 грн
500+ 11.38 грн
Мінімальне замовлення: 11
BZX884B18L-HG3-08 bzx884l-series.pdf
BZX884B18L-HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товар відсутній
BZX884B18L-HG3-08 bzx884l-series.pdf
BZX884B18L-HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 7555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.47 грн
14+ 21.68 грн
100+ 11.48 грн
500+ 7.08 грн
1000+ 4.82 грн
2000+ 4.35 грн
5000+ 3.72 грн
Мінімальне замовлення: 12
BZX884B18L-G3-08 bzx884l-series.pdf
BZX884B18L-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+2.89 грн
Мінімальне замовлення: 10000
BZX884B18L-G3-08 bzx884l-series.pdf
BZX884B18L-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: ZENER DIODE DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 26313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.89 грн
20+ 14.77 грн
100+ 7.21 грн
500+ 5.64 грн
1000+ 3.92 грн
2000+ 3.4 грн
5000+ 3.1 грн
Мінімальне замовлення: 14
SMC5K30CA-M3/H
SMC5K30CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
SMC5K30CA-M3/H
SMC5K30CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
SMC5K54CA-M3/H
SMC5K54CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
SMC5K54CA-M3/H
SMC5K54CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
BY229B-200-E3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-200-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-200HE3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-200HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-400-E3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-400-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-400HE3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-400HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-600-E3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-600-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-600HE3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-600HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-800-E3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-800-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229B-800HE3/81 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-800HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229-200-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229-200-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229-200HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229-200HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229-600-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-600-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229-600HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-600HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229-800-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229-800-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229-800HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229-800HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229B-200-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-200-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-200HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-200HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229B-400-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-400-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-400HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-400HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229B-600-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-600-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-600HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-600HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229B-800-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-800-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229B-800HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-800HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229X-200-E3/45 BY229(X,B)-200 - BY229(X,B)-800.pdf
BY229X-200-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229X-200HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-200HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BY229X-400-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-400-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229X-400HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-400HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BY229X-600-E3/45 BY229(X,B)-200 - BY229(X,B)-800.pdf
BY229X-600-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229X-600HE3/45 BY229(X,B)-200 - BY229(X,B)-800.pdf
BY229X-600HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BY229X-800-E3/45 BY229(X,B)-200 - BY229(X,B)-800.pdf
BY229X-800-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BY229X-800HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-800HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BYVB32-200HE3_A/I byv32.pdf
BYVB32-200HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BYVB32-200HE3_A/P byv32.pdf
BYVB32-200HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
товар відсутній
SMAJ60A-E3/5A smaj50a.pdf
SMAJ60A-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SMAJ60A-E3/5A smaj50a.pdf
SMAJ60A-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 3899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.52 грн
15+ 20.72 грн
100+ 10.43 грн
500+ 8.68 грн
1000+ 6.75 грн
2000+ 6.05 грн
Мінімальне замовлення: 10
ES07D-GS18 es07b.pdf
ES07D-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+8.06 грн
Мінімальне замовлення: 10000
ES07D-GS18 es07b.pdf
ES07D-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
на замовлення 190575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.76 грн
13+ 23.44 грн
100+ 15.94 грн
500+ 11.22 грн
1000+ 8.42 грн
2000+ 7.72 грн
5000+ 7.16 грн
Мінімальне замовлення: 11
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