Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37318) > Сторінка 306 з 622
| Фото | Назва | Виробник | Інформація |
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| VS-VSKD250-04PBF | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN 400V 125A MAGNAPAK |
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| VS-VSKD250-08PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 800V 125A MAGNAPAK |
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| VS-VSKD250-12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.2KV 125A MAGNAPAK |
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| VS-VSKD250-16PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.6KV 125A MAGNAPAK |
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| VS-VSKD250-20PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 2KV 125A MAGNAPAK |
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VS-VSKD270-04PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 135A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 135A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 50 mA @ 400 V |
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VS-VSKD270-08PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 800V 135A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 135A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 50 mA @ 800 V |
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| VS-VSKD270-12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.2KV 135A MAGNAPAK |
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| VS-VSKD270-16PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.6KV 135A MAGNAPAK |
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| VS-VSKD270-30PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 3KV 135A MAGNAPAK |
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VS-VSKD320-04PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 400V 160A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 50 mA @ 400 V |
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VS-VSKD320-08PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 800V 160A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 50 mA @ 800 V |
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VS-VSKD320-12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.2KV 160A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 50 mA @ 1200 V |
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VS-VSKD320-16PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.6KV 160A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Current - Reverse Leakage @ Vr: 50 mA @ 1600 V |
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VS-VSKD320-20PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 2KV 160A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 160A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Current - Reverse Leakage @ Vr: 50 mA @ 2000 V |
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| VS-VSKD56/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| VS-VSKD600-12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN 1.2KV 300A MAGNAPAK |
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VS-VSKD91/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 50A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| VS-VSKDS200/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A ADDAPAK |
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| VS-VSKDS201/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOT 45V 100A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 100 A Current - Reverse Leakage @ Vr: 10 mA @ 45 V |
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| VS-VSKDS203/100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOTT 100V ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 990 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 100 V |
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| VS-VSKDS208/060 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 100A ADDAPAK |
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| VS-VSKDS209/150 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 100A ADDAPAK |
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| VS-VSKDS220/030 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOT 30V 110A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 110A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 110 A Current - Reverse Leakage @ Vr: 10 mA @ 30 V |
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| VS-VSKDS301/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOT 45V 150A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A Current - Reverse Leakage @ Vr: 10 mA @ 45 V |
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| VS-VSKDS303/100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOTT 100V ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 150 A Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V |
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| VS-VSKDS400/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 200 A Current - Reverse Leakage @ Vr: 20 mA @ 45 V |
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| VS-VSKDS401/045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A ADDAPAK |
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| VS-VSKDS408/060 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 100A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 200 A Current - Reverse Leakage @ Vr: 2.2 mA @ 60 V |
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| VS-VSKDS440/030 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 110A ADDAPAK |
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| VS-VSKDU162/12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 1200V INTAPAK Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 102.5A (DC) Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 100 A Current - Reverse Leakage @ Vr: 30 mA @ 1200 V |
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| VS-VSKDU300/06PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 230A INTAPAK Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 165 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 230A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 300 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| VS-VSKE166/08PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 165A INTAPAK |
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| VS-VSKE166/12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 165A INTAPAK |
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| VS-VSKE166/14PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.4KV 165A INTAPAK |
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| VS-VSKE196/04PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 195A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 195A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 20 mA @ 400 V |
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| VS-VSKE196/08PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 800V 195A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 195A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 20 mA @ 800 V |
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| VS-VSKE196/12PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 195A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 195A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
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| VS-VSKE196/16PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.4KV 195A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 195A Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Current - Reverse Leakage @ Vr: 20 mA @ 1400 V |
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VS-VSKE270-04PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 270A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 270A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 50 mA @ 400 V |
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VS-VSKE270-08PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 800V 270A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 270A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 50 mA @ 800 V |
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| VS-VSKE270-16PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 270A MAGNAPAK |
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VS-VSKE320-20PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 320A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 320A Supplier Device Package: MAGN-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Current - Reverse Leakage @ Vr: 50 mA @ 2000 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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VS-VSKE91/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 314 A Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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VS-VSKE91/16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: ADD-A-PAK® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Current - Reverse Leakage @ Vr: 10 mA @ 1600 V |
на замовлення 69 шт: термін постачання 21-31 дні (днів) |
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VS-VSKH105/12 | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 1200V 105A ADD-A-PA Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 250 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 105 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 235 A Voltage - Off State: 1.2 kV |
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VS-VSKH136/12PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 135A INT-A-PAK |
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VS-VSKH142/08PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 140A INT-A-PAK |
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VS-VSKH142/12PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 140A INT-A-PAK |
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VS-VSKH142/14PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 140A INT-A-PAK |
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VS-VSKH142/16PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 140A INT-A-PAK |
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VS-VSKH162/04PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 160A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 355 A Voltage - Off State: 400 V |
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VS-VSKH162/08PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 160A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 355 A Voltage - Off State: 800 V |
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VS-VSKH162/12PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 160A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 355 A Voltage - Off State: 1.2 kV |
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VS-VSKH162/14PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 160A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 355 A Voltage - Off State: 1.4 kV |
товар відсутній |
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VS-VSKH162/16PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 160A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 355 A Voltage - Off State: 1.6 kV |
товар відсутній |
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VS-VSKH230-04PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 230A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK (3) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 230 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 510 A Voltage - Off State: 400 V |
товар відсутній |
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VS-VSKH230-08PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 230A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK (3) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 230 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 510 A Voltage - Off State: 800 V |
товар відсутній |
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VS-VSKH230-12PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 230A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK (3) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 230 A Voltage - Gate Trigger (Vgt) (Max): 3 V Part Status: Active Current - On State (It (RMS)) (Max): 510 A Voltage - Off State: 1.2 kV |
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VS-VSKH230-14PBF | Vishay General Semiconductor - Diodes Division |
Description: MODULE DIODE 230A MAGN-A-PAK Packaging: Bulk Package / Case: MAGN-A-PAK (3) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 230 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 510 A Voltage - Off State: 1.4 kV |
товар відсутній |
| VS-VSKD250-04PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 400V 125A MAGNAPAK
Description: DIODE GEN 400V 125A MAGNAPAK
товар відсутній
| VS-VSKD250-08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 800V 125A MAGNAPAK
Description: DIODE GEN 800V 125A MAGNAPAK
товар відсутній
| VS-VSKD250-12PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.2KV 125A MAGNAPAK
Description: DIODE GEN 1.2KV 125A MAGNAPAK
товар відсутній
| VS-VSKD250-16PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.6KV 125A MAGNAPAK
Description: DIODE GEN 1.6KV 125A MAGNAPAK
товар відсутній
| VS-VSKD250-20PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 2KV 125A MAGNAPAK
Description: DIODE GEN 2KV 125A MAGNAPAK
товар відсутній
| VS-VSKD270-04PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 135A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 135A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
Description: DIODE MOD GP 400V 135A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 135A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
товар відсутній
| VS-VSKD270-08PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 800V 135A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 135A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
Description: DIODE MOD GP 800V 135A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 135A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
| VS-VSKD270-12PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.2KV 135A MAGNAPAK
Description: DIODE GEN 1.2KV 135A MAGNAPAK
товар відсутній
| VS-VSKD270-16PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.6KV 135A MAGNAPAK
Description: DIODE GEN 1.6KV 135A MAGNAPAK
товар відсутній
| VS-VSKD270-30PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 3KV 135A MAGNAPAK
Description: DIODE GEN 3KV 135A MAGNAPAK
товар відсутній
| VS-VSKD320-04PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 400V 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
Description: DIODE GEN 400V 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
товар відсутній
| VS-VSKD320-08PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 800V 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
Description: DIODE GEN 800V 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
| VS-VSKD320-12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.2KV 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Description: DIODE GEN 1.2KV 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
товар відсутній
| VS-VSKD320-16PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.6KV 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Description: DIODE GEN 1.6KV 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
товар відсутній
| VS-VSKD320-20PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 2KV 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
Description: DIODE GEN 2KV 160A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
товар відсутній
| VS-VSKD56/12 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2972.05 грн |
| 10+ | 2639.63 грн |
| VS-VSKD600-12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN 1.2KV 300A MAGNAPAK
Description: DIODE GEN 1.2KV 300A MAGNAPAK
товар відсутній
| VS-VSKD91/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 50A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 50A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3029.28 грн |
| 10+ | 2721.12 грн |
| VS-VSKDS200/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
товар відсутній
| VS-VSKDS201/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 45V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
Description: DIODE MOD SCHOT 45V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
товар відсутній
| VS-VSKDS203/100 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 100V ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 100 V
Description: DIODE MOD SCHOTT 100V ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 100 V
товар відсутній
| VS-VSKDS208/060 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 100A ADDAPAK
Description: DIODE SCHOTTKY 60V 100A ADDAPAK
товар відсутній
| VS-VSKDS209/150 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 100A ADDAPAK
Description: DIODE SCHOTTKY 150V 100A ADDAPAK
товар відсутній
| VS-VSKDS220/030 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 30V 110A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 110 A
Current - Reverse Leakage @ Vr: 10 mA @ 30 V
Description: DIODE MOD SCHOT 30V 110A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 110 A
Current - Reverse Leakage @ Vr: 10 mA @ 30 V
товар відсутній
| VS-VSKDS301/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOT 45V 150A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
Description: DIODE MOD SCHOT 45V 150A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
товар відсутній
| VS-VSKDS303/100 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 100V ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 150 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
Description: DIODE MOD SCHOTT 100V ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 150 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
товар відсутній
| VS-VSKDS400/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 200 A
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 200 A
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
товар відсутній
| VS-VSKDS401/045 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
Description: DIODE SCHOTTKY 45V 100A ADDAPAK
товар відсутній
| VS-VSKDS408/060 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 200 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 60 V
Description: DIODE SCHOTTKY 60V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 200 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 60 V
товар відсутній
| VS-VSKDS440/030 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 110A ADDAPAK
Description: DIODE SCHOTTKY 30V 110A ADDAPAK
товар відсутній
| VS-VSKDU162/12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1200V INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 102.5A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 100 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Description: DIODE MOD GP 1200V INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 102.5A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 100 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
товар відсутній
| VS-VSKDU300/06PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 230A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 165 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 230A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 300 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE GEN PURP 600V 230A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 165 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 230A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 300 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7066.55 грн |
| VS-VSKE166/08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 165A INTAPAK
Description: DIODE GEN PURP 800V 165A INTAPAK
товар відсутній
| VS-VSKE166/12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 165A INTAPAK
Description: DIODE GP 1.2KV 165A INTAPAK
товар відсутній
| VS-VSKE166/14PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 165A INTAPAK
Description: DIODE GP 1.4KV 165A INTAPAK
товар відсутній
| VS-VSKE196/04PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
Description: DIODE GP 400V 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
товар відсутній
| VS-VSKE196/08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Description: DIODE GP 800V 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
товар відсутній
| VS-VSKE196/12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Description: DIODE GP 1.2KV 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
товар відсутній
| VS-VSKE196/16PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
Description: DIODE GP 1.4KV 195A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 195A
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
товар відсутній
| VS-VSKE270-04PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 270A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 270A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
Description: DIODE GP 400V 270A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 270A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
товар відсутній
| VS-VSKE270-08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 270A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 270A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
Description: DIODE GP 800V 270A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 270A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
| VS-VSKE270-16PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 270A MAGNAPAK
Description: DIODE GP 1.6KV 270A MAGNAPAK
товар відсутній
| VS-VSKE320-20PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 320A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 320A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
Description: DIODE GEN PURP 2KV 320A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 320A
Supplier Device Package: MAGN-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9753.98 грн |
| 10+ | 8695.12 грн |
| VS-VSKE91/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 314 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE GP 1.2KV 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 314 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2585.95 грн |
| 10+ | 2218.9 грн |
| VS-VSKE91/16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
Description: DIODE GP 1.6KV 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2637.84 грн |
| 10+ | 2263.42 грн |
| VS-VSKH105/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 1200V 105A ADD-A-PA
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 1.2 kV
Description: MODULE DIODE 1200V 105A ADD-A-PA
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 1.2 kV
товар відсутній
| VS-VSKH136/12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 135A INT-A-PAK
Description: MODULE DIODE 135A INT-A-PAK
товар відсутній
| VS-VSKH142/08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 140A INT-A-PAK
Description: MODULE DIODE 140A INT-A-PAK
товар відсутній
| VS-VSKH142/12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 140A INT-A-PAK
Description: MODULE DIODE 140A INT-A-PAK
товар відсутній
| VS-VSKH142/14PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 140A INT-A-PAK
Description: MODULE DIODE 140A INT-A-PAK
товар відсутній
| VS-VSKH142/16PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 140A INT-A-PAK
Description: MODULE DIODE 140A INT-A-PAK
товар відсутній
| VS-VSKH162/04PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 400 V
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 400 V
товар відсутній
| VS-VSKH162/08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 800 V
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 800 V
товар відсутній
| VS-VSKH162/12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.2 kV
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.2 kV
товар відсутній
| VS-VSKH162/14PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.4 kV
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.4 kV
товар відсутній
| VS-VSKH162/16PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.6 kV
Description: MODULE DIODE 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.6 kV
товар відсутній
| VS-VSKH230-04PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 400 V
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 400 V
товар відсутній
| VS-VSKH230-08PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 800 V
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 800 V
товар відсутній
| VS-VSKH230-12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 1.2 kV
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 1.2 kV
товар відсутній
| VS-VSKH230-14PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 1.4 kV
Description: MODULE DIODE 230A MAGN-A-PAK
Packaging: Bulk
Package / Case: MAGN-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 510 A
Voltage - Off State: 1.4 kV
товар відсутній