Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37317) > Сторінка 300 з 622
| Фото | Назва | Виробник | Інформація |
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VS-85HF160M | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.6KV 85A DO203ABPackaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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| VS-85HFL60S02M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A |
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| VS-85HFLR60S02M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 600V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A |
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| VS-85HFR140M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.4KV 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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VS-85HFR160M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.6KV 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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| VS-86HF80M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 800V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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| VS-86HFR80M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 800V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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| VS-87HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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| VS-87HFLR60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 60V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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VS-87HFR120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.2KV 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A Qualification: AEC-Q101 |
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| VS-87HFR40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 400V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A |
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| VS-88HFR40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 85A DO203AB |
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VS-95PFR120W | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.2KV 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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| VS-95PFR140 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.4KV 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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| VS-95PFR140W | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.4KV 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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VS-95PFR40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 400V 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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VS-95PFR40T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 400V 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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VS-95PFR40W | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 400V 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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VS-97PFR120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.2KV 95A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 95A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A |
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VS-CPV362M4FPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 8.8A 23W IMS-2 |
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| VS-EMF050J60U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 88A 338W EMIPAK2 Packaging: Bulk Package / Case: EMIPAK2 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: No Supplier Device Package: EMIPAK2 Part Status: Obsolete Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 338 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V |
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VS-ETF075Y60U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 109A EMIPAK-2B Packaging: Bulk Package / Case: EMIPAK-2B Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: EMIPAK-2B IGBT Type: Trench Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 294 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V |
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VS-ETL015Y120H | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B Packaging: Bulk Package / Case: EMIPAK-2B Mounting Type: Chassis Mount Input: Standard Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: EMIPAK-2B IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 89 W Current - Collector Cutoff (Max): 75 µA Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V |
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VS-FA38SA50LCP | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 500V 38A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 23A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
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VS-FA40SA50LC | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 500V 40A SOT-227 |
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VS-FA72SA50LC | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 500V 72A SOT-227 |
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VS-FB180SA10P | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 100V 180A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
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VS-GA100NA60UP | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 100A 250W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V |
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| VS-GA100TS60SFPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 220A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A NTC Thermistor: No Supplier Device Package: INT-A-PAK IGBT Type: PT Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 780 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V |
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| VS-GA200HS60S1PBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 480A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A NTC Thermistor: No Supplier Device Package: INT-A-PAK Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 830 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V |
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VS-GA200SA60SP | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 781W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 781 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V |
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VS-GA200SA60UP | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 200A 500W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V |
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| VS-GA200TH60S | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 600V 260A INT-A-PAK |
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| VS-GB100LH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 200A INT-A-PAK |
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| VS-GB100NH120N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 200A INT-A-PAK Packaging: Bulk Package / Case: Double INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Double INT-A-PAK Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 833 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V |
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| VS-GB100TH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 200A INT-A-PAK |
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| VS-GB100TH120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 200A INT-A-PAK |
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| VS-GB100TP120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 200A INT-A-PAK |
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| VS-GB100TP120U | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 150A INT-A-PAK |
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| VS-GB100TS60NPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 108A INT-A-PAK |
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| VS-GB150LH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 300A INT-A-PAK |
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| VS-GB150TH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 300A INT-A-PAK |
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| VS-GB150TH120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 280A INT-A-PAK |
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| VS-GB200LH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 370A INT-A-PAK |
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| VS-GB200NH120N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 420A INT-A-PAK Packaging: Bulk Package / Case: Double INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ) NTC Thermistor: No Supplier Device Package: Double INT-A-PAK Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1562 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V |
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| VS-GB200TH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 360A INT-A-PAK |
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| VS-GB200TH120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 330A INT-A-PAK Packaging: Bulk Package / Case: Double INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Double INT-A-PAK Part Status: Obsolete Current - Collector (Ic) (Max): 330 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1316 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V |
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| VS-GB300AH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 620A INT-A-PAK |
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| VS-GB300LH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 500A INT-A-PAK |
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| VS-GB300NH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 500A INT-A-PAK |
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| VS-GB300TH120N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 500A INT-A-PAK |
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| VS-GB300TH120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 530A INT-A-PAK |
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| VS-GB400AH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 650A INT-A-PAK |
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| VS-GB400AH120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 550A INT-A-PAK |
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| VS-GB400TH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 800A INT-A-PAK |
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| VS-GB400TH120U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 660A INT-A-PAK |
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| VS-GB50LP120N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 100A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ) NTC Thermistor: No Supplier Device Package: INT-A-PAK Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 446 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V |
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| VS-GB50TP120N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 100A INT-A-PAK Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: No Supplier Device Package: INT-A-PAK Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 446 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V |
товар відсутній |
||
| VS-GB50YF120N | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 66A ECONO2 4PACK Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A NTC Thermistor: No Supplier Device Package: ECONO2 4PACK Current - Collector (Ic) (Max): 66 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 330 W Current - Collector Cutoff (Max): 250 µA |
товар відсутній |
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| VS-GB600AH120N | Vishay General Semiconductor - Diodes Division | Description: IGBT MOD 1200V 910A INT-A-PAK |
товар відсутній |
| VS-85HF160M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GEN PURP 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-85HFL60S02M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
товар відсутній
| VS-85HFLR60S02M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
Description: DIODE GP REV 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
товар відсутній
| VS-85HFR140M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.4KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GP REV 1.4KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-85HFR160M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GP REV 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-86HF80M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GP REV 800V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-86HFR80M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GP REV 800V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-87HFL60S02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-87HFLR60S02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 60V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GP REV 60V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-87HFR120 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.2KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Qualification: AEC-Q101
Description: DIODE GP REV 1.2KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Qualification: AEC-Q101
товар відсутній
| VS-87HFR40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 400V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Description: DIODE GP REV 400V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
товар відсутній
| VS-88HFR40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 85A DO203AB
Description: DIODE GEN PURP 400V 85A DO203AB
товар відсутній
| VS-95PFR120W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.2KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 1.2KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-95PFR140 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.4KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 1.4KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-95PFR140W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.4KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 1.4KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-95PFR40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-95PFR40T |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-95PFR40W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 400V 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-97PFR120 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.2KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Description: DIODE GP REV 1.2KV 95A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 95A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
товар відсутній
| VS-CPV362M4FPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 8.8A 23W IMS-2
Description: IGBT MODULE 600V 8.8A 23W IMS-2
товар відсутній
| VS-EMF050J60U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 88A 338W EMIPAK2
Packaging: Bulk
Package / Case: EMIPAK2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EMIPAK2
Part Status: Obsolete
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 338 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Description: IGBT MOD 600V 88A 338W EMIPAK2
Packaging: Bulk
Package / Case: EMIPAK2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EMIPAK2
Part Status: Obsolete
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 338 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
товар відсутній
| VS-ETF075Y60U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 109A EMIPAK-2B
Packaging: Bulk
Package / Case: EMIPAK-2B
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: EMIPAK-2B
IGBT Type: Trench
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 294 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V
Description: IGBT MOD 600V 109A EMIPAK-2B
Packaging: Bulk
Package / Case: EMIPAK-2B
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: EMIPAK-2B
IGBT Type: Trench
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 294 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V
товар відсутній
| VS-ETL015Y120H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B
Packaging: Bulk
Package / Case: EMIPAK-2B
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: EMIPAK-2B
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
Description: IGBT MOD 1200V 22A 89W EMIPAK-2B
Packaging: Bulk
Package / Case: EMIPAK-2B
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: EMIPAK-2B
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 1.07 nF @ 30 V
товар відсутній
| VS-FA38SA50LCP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 38A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 23A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 500V 38A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 23A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
| VS-FA40SA50LC |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 40A SOT-227
Description: MOSFET N-CH 500V 40A SOT-227
товар відсутній
| VS-FA72SA50LC |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 72A SOT-227
Description: MOSFET N-CH 500V 72A SOT-227
товар відсутній
| VS-FB180SA10P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 180A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 100V 180A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товар відсутній
| VS-GA100NA60UP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 100A 250W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V
Description: IGBT MOD 600V 100A 250W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V
товар відсутній
| VS-GA100TS60SFPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 220A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: PT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Description: IGBT MOD 600V 220A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: PT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
товар відсутній
| VS-GA200HS60S1PBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 480A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
Description: IGBT MOD 600V 480A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
товар відсутній
| VS-GA200SA60SP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 781W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 781 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Description: IGBT MODULE 600V 781W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 781 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
товар відсутній
| VS-GA200SA60UP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 500W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
Description: IGBT MOD 600V 200A 500W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
товар відсутній
| VS-GA200TH60S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 260A INT-A-PAK
Description: IGBT MOD 600V 260A INT-A-PAK
товар відсутній
| VS-GB100LH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Description: IGBT MOD 1200V 200A INT-A-PAK
товар відсутній
| VS-GB100NH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
товар відсутній
| VS-GB100TH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Description: IGBT MOD 1200V 200A INT-A-PAK
товар відсутній
| VS-GB100TH120U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Description: IGBT MOD 1200V 200A INT-A-PAK
товар відсутній
| VS-GB100TP120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Description: IGBT MOD 1200V 200A INT-A-PAK
товар відсутній
| VS-GB100TP120U |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 150A INT-A-PAK
Description: IGBT MOD 1200V 150A INT-A-PAK
товар відсутній
| VS-GB100TS60NPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 108A INT-A-PAK
Description: IGBT MOD 600V 108A INT-A-PAK
товар відсутній
| VS-GB150LH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 300A INT-A-PAK
Description: IGBT MOD 1200V 300A INT-A-PAK
товар відсутній
| VS-GB150TH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 300A INT-A-PAK
Description: IGBT MOD 1200V 300A INT-A-PAK
товар відсутній
| VS-GB150TH120U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 280A INT-A-PAK
Description: IGBT MOD 1200V 280A INT-A-PAK
товар відсутній
| VS-GB200LH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 370A INT-A-PAK
Description: IGBT MOD 1200V 370A INT-A-PAK
товар відсутній
| VS-GB200NH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 420A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Description: IGBT MOD 1200V 420A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
товар відсутній
| VS-GB200TH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 360A INT-A-PAK
Description: IGBT MOD 1200V 360A INT-A-PAK
товар відсутній
| VS-GB200TH120U |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 330A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1316 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
Description: IGBT MOD 1200V 330A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1316 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
товар відсутній
| VS-GB300AH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 620A INT-A-PAK
Description: IGBT MOD 1200V 620A INT-A-PAK
товар відсутній
| VS-GB300LH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
Description: IGBT MOD 1200V 500A INT-A-PAK
товар відсутній
| VS-GB300NH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
Description: IGBT MOD 1200V 500A INT-A-PAK
товар відсутній
| VS-GB300TH120N |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
Description: IGBT MOD 1200V 500A INT-A-PAK
товар відсутній
| VS-GB300TH120U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 530A INT-A-PAK
Description: IGBT MOD 1200V 530A INT-A-PAK
товар відсутній
| VS-GB400AH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 650A INT-A-PAK
Description: IGBT MOD 1200V 650A INT-A-PAK
товар відсутній
| VS-GB400AH120U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 550A INT-A-PAK
Description: IGBT MOD 1200V 550A INT-A-PAK
товар відсутній
| VS-GB400TH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 800A INT-A-PAK
Description: IGBT MOD 1200V 800A INT-A-PAK
товар відсутній
| VS-GB400TH120U |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 660A INT-A-PAK
Description: IGBT MOD 1200V 660A INT-A-PAK
товар відсутній
| VS-GB50LP120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
товар відсутній
| VS-GB50TP120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
товар відсутній
| VS-GB50YF120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 66A ECONO2 4PACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ECONO2 4PACK
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MOD 1200V 66A ECONO2 4PACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ECONO2 4PACK
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 250 µA
товар відсутній
| VS-GB600AH120N |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 910A INT-A-PAK
Description: IGBT MOD 1200V 910A INT-A-PAK
товар відсутній