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MMSZ5255B-G3-08 MMSZ5255B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5255B-HE3-08 MMSZ5255B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5255C-E3-08 MMSZ5255C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+4.41 грн
6000+ 3.69 грн
Мінімальне замовлення: 3000
MMSZ5255C-G3-08 MMSZ5255C-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5255C-HE3-08 MMSZ5255C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5256B-G3-08 MMSZ5256B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 30V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товар відсутній
MMSZ5256C-G3-08 MMSZ5256C-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 30V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товар відсутній
MMSZ5256C-HE3-08 MMSZ5256C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 30V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товар відсутній
MMSZ5257B-G3-08 MMSZ5257B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5257B-HE3-08 MMSZ5257B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5257C-G3-08 MMSZ5257C-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5257C-HE3-08 MMSZ5257C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5260B-G3-08 MMSZ5260B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 43V 500MW SOD123
товар відсутній
MMSZ5260C-E3-08 MMSZ5260C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 43V 500MW SOD123
товар відсутній
MMSZ5262B-E3-08 MMSZ5262B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 51V 500MW SOD123
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
MMSZ5262B-G3-08 MMSZ5262B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 51V 500MW SOD123
товар відсутній
MMSZ5262B-HE3-08 MMSZ5262B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 51V 500MW SOD123
товар відсутній
MMSZ5264B-G3-08 MMSZ5264B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 60V 500MW SOD123
товар відсутній
MMSZ5265B-G3-08 MMSZ5265B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 62V 500MW SOD123
товар відсутній
MMSZ5266B-G3-08 MMSZ5266B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266B-HE3-08 MMSZ5266B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266C-E3-08 MMSZ5266C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266C-G3-08 MMSZ5266C-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266C-HE3-08 MMSZ5266C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5267B-G3-08 MMSZ5267B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267B-HE3-08 MMSZ5267B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267C-E3-08 MMSZ5267C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267C-G3-08 MMSZ5267C-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267C-HE3-08 MMSZ5267C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MSMP14A-M3/89A MSMP14A-M3/89A Vishay General Semiconductor - Diodes Division msmp6a.pdf Description: TVS DIODE 14VWM 23.2VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
4500+4.17 грн
9000+ 3.09 грн
Мінімальне замовлення: 4500
MSMP15A-M3/89A MSMP15A-M3/89A Vishay General Semiconductor - Diodes Division mspm6a.pdf Description: TVS DIODE 15VWM 24.4VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: MicroSMP (DO-219AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
4500+4.87 грн
9000+ 4.08 грн
13500+ 3.47 грн
Мінімальне замовлення: 4500
MSMP16A-M3/89A MSMP16A-M3/89A Vishay General Semiconductor - Diodes Division mspm6a.pdf Description: TVS DIODE 16VWM 26VC MICROSMP
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
MSMP18A-M3/89A MSMP18A-M3/89A Vishay General Semiconductor - Diodes Division mspm6a.pdf Description: TVS DIODE 18V 29.2V MICROSMP
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
2KBP005M-M4/51 2KBP005M-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
2KBP02M-M4/51 2KBP02M-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
2KBP04M-M4/51 2KBP04M-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
2KBP06M-M4/51 2KBP06M-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
2KBP08M-M4/51 2KBP08M-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
2KBP10M-M4/51 2KBP10M-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
3KBP02M-M4/51 3KBP02M-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
3KBP04M-M4/51 3KBP04M-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
3KBP06M-M4/51 3KBP06M-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
3KBP08M-M4/51 3KBP08M-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
3N246-M4/51 3N246-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
3N251-M4/51 3N251-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1P 800V 1.5A KBPM
товар відсутній
3N252-E4/51 3N252-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M, 3N246_thru_52.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
3N252-M4/51 3N252-M4/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
3N257-M4/51 3N257-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
3N258-M4/51 3N258-M4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
товар відсутній
BU1006A-M3/51 BU1006A-M3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 600V 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BU1006-M3/51 BU1006-M3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 600V 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1010A-M3/51 BU1010A-M3/51 Vishay General Semiconductor - Diodes Division bu1006a.pdf Description: BRIDGE RECT 1P 1KV 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010-M3/51 BU1010-M3/51 Vishay General Semiconductor - Diodes Division bu1006.pdf Description: BRIDGE RECT 1P 1KV 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1206-M3/51 BU1206-M3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 600V 12A BU
товар відсутній
BU1208-M3/51 BU1208-M3/51 Vishay General Semiconductor - Diodes Division bu1206.pdf Description: BRIDGE RECT 1P 800V 12A BU
товар відсутній
BU1506-M3/51 BU1506-M3/51 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 600V 15A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1508-M3/51 BU1508-M3/51 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1P 800V 15A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2008-M3/51 BU2008-M3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 800V 20A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2010-M3/51 BU2010-M3/51 Vishay General Semiconductor - Diodes Division bu2006.pdf Description: BRIDGE RECT 1P 1KV 20A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU2506-M3/51 BU2506-M3/51 Vishay General Semiconductor - Diodes Division bu2506.pdf Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MMSZ5255B-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5255B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5255B-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5255B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5255C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5255C-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.41 грн
6000+ 3.69 грн
Мінімальне замовлення: 3000
MMSZ5255C-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5255C-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5255C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5255C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
MMSZ5256B-G3-08 mmsz5225.pdf
MMSZ5256B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товар відсутній
MMSZ5256C-G3-08 mmsz5225.pdf
MMSZ5256C-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товар відсутній
MMSZ5256C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5256C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товар відсутній
MMSZ5257B-G3-08 mmsz5225.pdf
MMSZ5257B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5257B-HE3-08 mmsz5225.pdf
MMSZ5257B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5257C-G3-08 mmsz5225.pdf
MMSZ5257C-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5257C-HE3-08 mmsz5225.pdf
MMSZ5257C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
MMSZ5260B-G3-08 mmsz5225.pdf
MMSZ5260B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD123
товар відсутній
MMSZ5260C-E3-08 mmsz5225.pdf
MMSZ5260C-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD123
товар відсутній
MMSZ5262B-E3-08 mmsz5225.pdf
MMSZ5262B-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW SOD123
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
MMSZ5262B-G3-08 mmsz5225.pdf
MMSZ5262B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW SOD123
товар відсутній
MMSZ5262B-HE3-08 mmsz5225.pdf
MMSZ5262B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW SOD123
товар відсутній
MMSZ5264B-G3-08 mmsz5225.pdf
MMSZ5264B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
товар відсутній
MMSZ5265B-G3-08 mmsz5225.pdf
MMSZ5265B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 500MW SOD123
товар відсутній
MMSZ5266B-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5266B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266B-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5266B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5266C-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266C-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5266C-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5266C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5266C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
товар відсутній
MMSZ5267B-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5267B-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267B-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267C-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267C-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5267C-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MMSZ5267C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
MSMP14A-M3/89A msmp6a.pdf
MSMP14A-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4500+4.17 грн
9000+ 3.09 грн
Мінімальне замовлення: 4500
MSMP15A-M3/89A mspm6a.pdf
MSMP15A-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: MicroSMP (DO-219AD)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4500+4.87 грн
9000+ 4.08 грн
13500+ 3.47 грн
Мінімальне замовлення: 4500
MSMP16A-M3/89A mspm6a.pdf
MSMP16A-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC MICROSMP
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
MSMP18A-M3/89A mspm6a.pdf
MSMP18A-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18V 29.2V MICROSMP
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
2KBP005M-M4/51 2KBP005M-10M,3N253-259.pdf
2KBP005M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
2KBP02M-M4/51 2KBP005M-10M,3N253-259.pdf
2KBP02M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
2KBP04M-M4/51 2KBP005M-10M,3N253-259.pdf
2KBP04M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
2KBP06M-M4/51 2KBP005M-10M,3N253-259.pdf
2KBP06M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
2KBP08M-M4/51 2KBP005M-10M,3N253-259.pdf
2KBP08M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
2KBP10M-M4/51 2KBP005M-10M,3N253-259.pdf
2KBP10M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
3KBP02M-M4/51
3KBP02M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
3KBP04M-M4/51
3KBP04M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
3KBP06M-M4/51
3KBP06M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
3KBP08M-M4/51
3KBP08M-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
3N246-M4/51
3N246-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
3N251-M4/51
3N251-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
товар відсутній
3N252-E4/51 KBP005M_thru_10M, 3N246_thru_52.pdf
3N252-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
3N252-M4/51
3N252-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
3N257-M4/51 2KBP005M-10M,3N253-259.pdf
3N257-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
3N258-M4/51 2KBP005M-10M,3N253-259.pdf
3N258-M4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
товар відсутній
BU1006A-M3/51 bu1006a.pdf
BU1006A-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BU1006-M3/51 bu1006.pdf
BU1006-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1010A-M3/51 bu1006a.pdf
BU1010A-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1010-M3/51 bu1006.pdf
BU1010-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 10A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU1206-M3/51 bu1206.pdf
BU1206-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 12A BU
товар відсутній
BU1208-M3/51 bu1206.pdf
BU1208-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 12A BU
товар відсутній
BU1506-M3/51 bu1506.pdf
BU1506-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 15A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BU1508-M3/51 bu1506.pdf
BU1508-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 15A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2008-M3/51 bu2006.pdf
BU2008-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 20A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BU2010-M3/51 bu2006.pdf
BU2010-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 20A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BU2506-M3/51 bu2506.pdf
BU2506-M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
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