Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37670) > Сторінка 26 з 628
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MBRS140TR | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 40V 1A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
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MBRS360TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
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MBRS190TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 90 V |
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MBRA140TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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MBRS130LTR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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81CNQ035ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 35V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 35 V |
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111CNQ045A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V D618 |
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112CNQ030A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V D618 |
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113CNQ100A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 100V D618 |
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110CNQ045A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V D618 |
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80CNQ045ASM | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V D618SM |
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112CNQ030ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 55A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 55A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 55 A Current - Reverse Leakage @ Vr: 3.5 mA @ 30 V |
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112CNQ030ASM | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V D618SM |
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80CNQ040ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
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81CNQ040ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
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80CNQ035ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 35V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A Current - Reverse Leakage @ Vr: 5 mA @ 35 V |
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81CNQ045ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
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115CNQ015A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 15V D618 |
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88CNQ060ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 60V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 40 A Current - Reverse Leakage @ Vr: 640 µA @ 60 V |
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88CNQ060A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V D618 |
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| 70CRU02 | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY GP 200V 35A TO218 |
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89CNQ150A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 150V D618 |
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83CNQ080ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 80V 80A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A Current - Reverse Leakage @ Vr: 1.5 mA @ 80 V |
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208CNQ060 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 60V 100A TO244AB |
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UFB200FA40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 400V 100A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 93 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A (DC) Supplier Device Package: SOT-227 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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GA200SA60U | Vishay General Semiconductor - Diodes Division |
 Description: IGBT MOD 600V 200A 500W SOT227BPackage / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V |
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GA200SA60S | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 200A 630W SOT227B Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 630 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V |
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113CNQ100ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 55A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 55A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 55 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
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87CNQ020ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 20V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 40 A Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V |
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85CNQ015ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 15V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 80 A Current - Reverse Leakage @ Vr: 20 mA @ 15 V |
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87CNQ020A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 20V D618 |
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110CNQ045ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 55A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 55A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 55 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
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83CNQ100ASL | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 40A D618SL Packaging: Bulk Package / Case: D-61-8-SL Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V |
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83CNQ100ASM | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 40A D618SM Packaging: Bulk Package / Case: D-61-8-SM Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8-SM Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V |
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82CNQ030ASM | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V D618SM |
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UFB200FA20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 200V 120A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: SOT-227 Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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81CNQ035A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 35V D618 |
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83CNQ080A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 80V D618 |
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80CNQ035A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 35V D618 |
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81CNQ045A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V D618 Packaging: Bulk Package / Case: D-61-8 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: D-61-8 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
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81CNQ040A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V D618 |
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80CNQ040A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V D618 |
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89CNQ135A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 135V D618 |
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409DMQ135 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOTT 135V TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 400A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 135 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 400 A Current - Reverse Leakage @ Vr: 6 mA @ 135 V |
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4GBL01 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 100V 4A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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1N6392 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 60A DO203AB |
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15ETH06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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15ETH03 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 300 V |
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10TTS08S | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A D2PAK |
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10TTS08 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz Current - On State (It (AV)) (Max): 6.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.15 V Current - Off State (Max): 50 µA Supplier Device Package: TO-220-3 Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 800 V |
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VS-150EBU04 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 400V 150A POWIRTABPackaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 93 ns Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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40TPS12A | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 55A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz Current - On State (It (AV)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 1.85 V Current - Off State (Max): 500 µA Supplier Device Package: TO-247AC Part Status: Obsolete Current - On State (It (RMS)) (Max): 55 A Voltage - Off State: 1.2 kV |
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VS-80EBU02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 80A POWIRTAB Packaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: PowIRtab™ Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 80 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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VS-150EBU02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 150A POWIRTAB Packaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 150 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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8ETH03-1 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 8A TO262 |
товар відсутній |
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MBRD650CT | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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8ETH03S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 8A D2PAK |
товар відсутній |
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8ETH06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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8ETH03 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 8A TO220AC |
товар відсутній |
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8ETH06-1 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товар відсутній |
| MBRS140TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товар відсутній
| MBRS360TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
| MBRS190TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
товар відсутній
| MBRA140TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
| MBRS130LTR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній
| 81CNQ035ASL |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 35 V
Description: DIODE ARR SCHOTT 35V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 35 V
товар відсутній
| 111CNQ045A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V D618
Description: DIODE ARRAY SCHOTTKY 45V D618
товар відсутній
| 112CNQ030A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618
Description: DIODE ARRAY SCHOTTKY 30V D618
товар відсутній
| 113CNQ100A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V D618
Description: DIODE ARRAY SCHOTTKY 100V D618
товар відсутній
| 110CNQ045A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V D618
Description: DIODE ARRAY SCHOTTKY 45V D618
товар відсутній
| 80CNQ045ASM |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V D618SM
Description: DIODE ARRAY SCHOTTKY 45V D618SM
товар відсутній
| 112CNQ030ASL |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 55 A
Current - Reverse Leakage @ Vr: 3.5 mA @ 30 V
Description: DIODE ARR SCHOTT 30V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 55 A
Current - Reverse Leakage @ Vr: 3.5 mA @ 30 V
товар відсутній
| 112CNQ030ASM |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SM
Description: DIODE ARRAY SCHOTTKY 30V D618SM
товар відсутній
| 80CNQ040ASL |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE ARR SCHOTT 40V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товар відсутній
| 81CNQ040ASL |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE ARR SCHOTT 40V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товар відсутній
| 80CNQ035ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 35 V
Description: DIODE ARR SCHOTT 35V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 35 V
товар відсутній
| 81CNQ045ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товар відсутній
| 115CNQ015A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 15V D618
Description: DIODE ARRAY SCHOTTKY 15V D618
товар відсутній
| 88CNQ060ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 40 A
Current - Reverse Leakage @ Vr: 640 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 40 A
Current - Reverse Leakage @ Vr: 640 µA @ 60 V
товар відсутній
| 88CNQ060A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V D618
Description: DIODE ARRAY SCHOTTKY 60V D618
товар відсутній
| 70CRU02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 35A TO218
Description: DIODE ARRAY GP 200V 35A TO218
товар відсутній
| 89CNQ150A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V D618
Description: DIODE ARRAY SCHOTTKY 150V D618
товар відсутній
| 83CNQ080ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 80A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 80 V
Description: DIODE ARR SCHOTT 80V 80A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 80 V
товар відсутній
| 208CNQ060 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 60V 100A TO244AB
Description: DIODE MODULE 60V 100A TO244AB
товар відсутній
| UFB200FA40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
| GA200SA60U | |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 500W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
Description: IGBT MOD 600V 200A 500W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
товар відсутній
| GA200SA60S |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 630W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Description: IGBT MOD 600V 200A 630W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
товар відсутній
| 113CNQ100ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 55 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARR SCHOTT 100V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 55 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
| 87CNQ020ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 20V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 40 A
Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V
Description: DIODE ARR SCHOTT 20V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 40 A
Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V
товар відсутній
| 85CNQ015ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 15V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 80 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Description: DIODE ARR SCHOTT 15V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 80 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
товар відсутній
| 87CNQ020A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 20V D618
Description: DIODE ARRAY SCHOTTKY 20V D618
товар відсутній
| 110CNQ045ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 55 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 55 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
товар відсутній
| 83CNQ100ASL |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Description: DIODE ARR SCHOTT 100V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
товар відсутній
| 83CNQ100ASM |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 40A D618SM
Packaging: Bulk
Package / Case: D-61-8-SM
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SM
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Description: DIODE ARR SCHOTT 100V 40A D618SM
Packaging: Bulk
Package / Case: D-61-8-SM
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SM
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
товар відсутній
| 82CNQ030ASM |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SM
Description: DIODE ARRAY SCHOTTKY 30V D618SM
товар відсутній
| UFB200FA20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 200V 120A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: SOT-227
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE MODULE GP 200V 120A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: SOT-227
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| 81CNQ035A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V D618
Description: DIODE ARRAY SCHOTTKY 35V D618
товар відсутній
| 83CNQ080A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 80V D618
Description: DIODE ARRAY SCHOTTKY 80V D618
товар відсутній
| 80CNQ035A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V D618
Description: DIODE ARRAY SCHOTTKY 35V D618
товар відсутній
| 81CNQ045A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V D618
Packaging: Bulk
Package / Case: D-61-8
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE ARRAY SCHOTTKY 45V D618
Packaging: Bulk
Package / Case: D-61-8
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товар відсутній
| 81CNQ040A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V D618
Description: DIODE ARRAY SCHOTTKY 40V D618
товар відсутній
| 80CNQ040A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V D618
Description: DIODE ARRAY SCHOTTKY 40V D618
товар відсутній
| 89CNQ135A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 135V D618
Description: DIODE ARRAY SCHOTTKY 135V D618
товар відсутній
| 409DMQ135 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 135V TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 135 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 400 A
Current - Reverse Leakage @ Vr: 6 mA @ 135 V
Description: DIODE MOD SCHOTT 135V TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 135 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 400 A
Current - Reverse Leakage @ Vr: 6 mA @ 135 V
товар відсутній
| 4GBL01 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 3PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| 1N6392 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 60A DO203AB
Description: DIODE SCHOTTKY 45V 60A DO203AB
товар відсутній
| 15ETH06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| 15ETH03 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Description: DIODE GEN PURP 300V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
товар відсутній
| 10TTS08S |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A D2PAK
Description: SCR 800V 10A D2PAK
товар відсутній
| 10TTS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Description: SCR 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
товар відсутній
| VS-150EBU04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GP 400V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
| 40TPS12A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
товар відсутній
| VS-80EBU02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 80A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowIRtab™
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GEN PURP 200V 80A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowIRtab™
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 355.82 грн |
| VS-150EBU02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GP 200V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| 8ETH03-1 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO262
Description: DIODE GEN PURP 300V 8A TO262
товар відсутній
| MBRD650CT |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товар відсутній
| 8ETH03S |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A D2PAK
Description: DIODE GEN PURP 300V 8A D2PAK
товар відсутній
| 8ETH06 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| 8ETH03 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Description: DIODE GEN PURP 300V 8A TO220AC
товар відсутній
| 8ETH06-1 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній