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BYT52J-TR BYT52J-TR Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 600V 1.4A SOD57
товар відсутній
BYT52K-TR BYT52K-TR Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 800V 1.4A SOD57
товар відсутній
BYT56A-TR BYT56A-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 50V 3A SOD64
товар відсутній
BYT56B-TR BYT56B-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 100V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
BYT56D-TR BYT56D-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 200V 3A SOD64
товар відсутній
BYT56G-TR BYT56G-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 400V 3A SOD64
товар відсутній
BYT56J-TR BYT56J-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 600V 3A SOD64
товар відсутній
BYT56K-TR BYT56K-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BYV12-TR BYV12-TR Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 100V 1.5A SOD57
товар відсутній
BYV13-TR BYV13-TR Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 400V 1.5A SOD57
товар відсутній
BYV14-TR BYV14-TR Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 600V 1.5A SOD57
товар відсутній
BYV15-TR BYV15-TR Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 800V 1.5A SOD57
товар відсутній
BYV26A-TR BYV26A-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYV26D-TR BYV26D-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+15.32 грн
Мінімальне замовлення: 5000
BYV27-050-TR BYV27-050-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
товар відсутній
BYV27-150-TR BYV27-150-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
товар відсутній
BYV27-600-TR BYV27-600-TR Vishay General Semiconductor - Diodes Division byv27600.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BYV28-050-TR BYV28-050-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товар відсутній
BYV28-100-TR BYV28-100-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
BYV28-200-TR BYV28-200-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+40.02 грн
5000+ 36.71 грн
Мінімальне замовлення: 2500
BYV37-TR BYV37-TR Vishay General Semiconductor - Diodes Division byv37.pdf Description: DIODE AVALANCHE 800V 2A SOD57
товар відсутній
BYV98-100-TR BYV98-100-TR Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
BYV98-150-TR BYV98-150-TR Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
BYV98-50-TR BYV98-50-TR Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BYW172D-TR BYW172D-TR Vishay General Semiconductor - Diodes Division byw172d.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
BYW172F-TR BYW172F-TR Vishay General Semiconductor - Diodes Division byw172d.pdf Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
BYW172G-TR BYW172G-TR Vishay General Semiconductor - Diodes Division byw172d.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
BYW178-TR BYW178-TR Vishay General Semiconductor - Diodes Division byw178.pdf Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+35.84 грн
5000+ 32.87 грн
Мінімальне замовлення: 2500
BYW32-TR BYW32-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
5000+14.99 грн
10000+ 13.36 грн
25000+ 13.23 грн
Мінімальне замовлення: 5000
BYW33-TR BYW33-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 300V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
BYW34-TR BYW34-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BYW35-TR BYW35-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 500V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW52-TR BYW52-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
BYW72-TR BYW72-TR Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYW75TR BYW75TR Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 500V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW76TR BYW76TR Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BYW82-TR BYW82-TR Vishay General Semiconductor - Diodes Division byw82.pdf Description: DIODE AVALANCHE 200V 3A SOD64
товар відсутній
BYW83-TR BYW83-TR Vishay General Semiconductor - Diodes Division byw82.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
BYX85TR BYX85TR Vishay General Semiconductor - Diodes Division byx82.pdf Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
BYX86TR BYX86TR Vishay General Semiconductor - Diodes Division byx82.pdf Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
BZD17C100P-E3-18 BZD17C100P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD17C110P-E3-18 BZD17C110P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
товар відсутній
BZD17C11P-E3-18 BZD17C11P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
товар відсутній
BZD17C130P-E3-18 BZD17C130P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 130V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
BZD17C13P-E3-18 BZD17C13P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD17C18P-E3-18 BZD17C18P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 18V 800MW DO219AB
товар відсутній
BZD17C24P-E3-18 BZD17C24P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 24V 800MW DO219AB
товар відсутній
BZD17C36P-E3-18 BZD17C36P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 36V 800MW DO219AB
товар відсутній
BZD17C51P-E3-18 BZD17C51P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 51V 800MW DO219AB
товар відсутній
BZD27C100P-E3-18 BZD27C100P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C100P-HE3-18 BZD27C100P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C100P-M-18 BZD27C100P-M-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C100P-M3-18 BZD27C100P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C10P-E3-18 BZD27C10P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товар відсутній
BZD27C10P-HE3-18 BZD27C10P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
Qualification: AEC-Q101
товар відсутній
BZD27C10P-M-18 BZD27C10P-M-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товар відсутній
BZD27C10P-M3-18 BZD27C10P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товар відсутній
BZD27C110P-M-18 BZD27C110P-M-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
товар відсутній
BZD27C11P-HE3-18 BZD27C11P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
товар відсутній
BZD27C120P-E3-18 BZD27C120P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 120V 800MW DO219AB
товар відсутній
BYT52J-TR byt52.pdf
BYT52J-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
товар відсутній
BYT52K-TR byt52.pdf
BYT52K-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A SOD57
товар відсутній
BYT56A-TR byt56a.pdf
BYT56A-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3A SOD64
товар відсутній
BYT56B-TR byt56a.pdf
BYT56B-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
BYT56D-TR byt56a.pdf
BYT56D-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
товар відсутній
BYT56G-TR byt56a.pdf
BYT56G-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
товар відсутній
BYT56J-TR byt56a.pdf
BYT56J-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
товар відсутній
BYT56K-TR byt56a.pdf
BYT56K-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BYV12-TR byv12.pdf
BYV12-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1.5A SOD57
товар відсутній
BYV13-TR byv12.pdf
BYV13-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A SOD57
товар відсутній
BYV14-TR byv12.pdf
BYV14-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A SOD57
товар відсутній
BYV15-TR byv12.pdf
BYV15-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
товар відсутній
BYV26A-TR byv26.pdf
BYV26A-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYV26D-TR byv26.pdf
BYV26D-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+15.32 грн
Мінімальне замовлення: 5000
BYV27-050-TR byv27.pdf
BYV27-050-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
товар відсутній
BYV27-150-TR byv27.pdf
BYV27-150-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
товар відсутній
BYV27-600-TR byv27600.pdf
BYV27-600-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BYV28-050-TR byv2850.pdf
BYV28-050-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товар відсутній
BYV28-100-TR byv2850.pdf
BYV28-100-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
BYV28-200-TR byv2850.pdf
BYV28-200-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+40.02 грн
5000+ 36.71 грн
Мінімальне замовлення: 2500
BYV37-TR byv37.pdf
BYV37-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
товар відсутній
BYV98-100-TR byv98.pdf
BYV98-100-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
BYV98-150-TR byv98.pdf
BYV98-150-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
BYV98-50-TR byv98.pdf
BYV98-50-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BYW172D-TR byw172d.pdf
BYW172D-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
BYW172F-TR byw172d.pdf
BYW172F-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
BYW172G-TR byw172d.pdf
BYW172G-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
BYW178-TR byw178.pdf
BYW178-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+35.84 грн
5000+ 32.87 грн
Мінімальне замовлення: 2500
BYW32-TR byw32.pdf
BYW32-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+14.99 грн
10000+ 13.36 грн
25000+ 13.23 грн
Мінімальне замовлення: 5000
BYW33-TR byw32.pdf
BYW33-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
BYW34-TR byw32.pdf
BYW34-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BYW35-TR byw32.pdf
BYW35-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW52-TR byw52.pdf
BYW52-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
BYW72-TR byw72.pdf
BYW72-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYW75TR byw72.pdf
BYW75TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW76TR byw72.pdf
BYW76TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BYW82-TR byw82.pdf
BYW82-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
товар відсутній
BYW83-TR byw82.pdf
BYW83-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
BYX85TR byx82.pdf
BYX85TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
BYX86TR byx82.pdf
BYX86TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
BZD17C100P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C100P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD17C110P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C110P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
товар відсутній
BZD17C11P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C11P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
товар відсутній
BZD17C130P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C130P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 130V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
BZD17C13P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C13P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD17C18P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C18P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 800MW DO219AB
товар відсутній
BZD17C24P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C24P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
товар відсутній
BZD17C36P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C36P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
товар відсутній
BZD17C51P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C51P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 800MW DO219AB
товар відсутній
BZD27C100P-E3-18 bzd27series.pdf
BZD27C100P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C100P-HE3-18 bzd27series.pdf
BZD27C100P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C100P-M-18 BZD27-M_Series.pdf
BZD27C100P-M-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C100P-M3-18 BZD27-M_Series.pdf
BZD27C100P-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZD27C10P-E3-18 bzd27series.pdf
BZD27C10P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товар відсутній
BZD27C10P-HE3-18 bzd27series.pdf
BZD27C10P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
Qualification: AEC-Q101
товар відсутній
BZD27C10P-M-18 BZD27-M_Series.pdf
BZD27C10P-M-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товар відсутній
BZD27C10P-M3-18 BZD27-M_Series.pdf
BZD27C10P-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
товар відсутній
BZD27C110P-M-18 BZD27-M_Series.pdf
BZD27C110P-M-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
товар відсутній
BZD27C11P-HE3-18 bzd27series.pdf
BZD27C11P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
товар відсутній
BZD27C120P-E3-18 bzd27series.pdf
BZD27C120P-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 800MW DO219AB
товар відсутній
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