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без ПДВ
RN1114(T5L,F,T) RN1114(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1115 Description: TRANS PREBIAS NPN 50V 0.1A SSM
товар відсутній
RN1115,LF(CT RN1115,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1115 Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN1117(T5L,F,T) RN1117(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
RN1118(T5L,F,T) RN1118(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1114 Description: TRANS PREBIAS NPN 0.1W SSM
товар відсутній
RN1130MFV,L3F RN1130MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=949&prodName=RN1130MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
товар відсутній
RN1131MFV(TL3,T) RN1131MFV(TL3,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
товар відсутній
RN1303(TE85L,F) RN1303(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1302 Description: TRANS PREBIAS NPN 50V 0.1A USM
товар відсутній
RN1310(TE85L,F) RN1310(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
товар відсутній
RN1507(TE85L,F) RN1507(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
товар відсутній
RN1602(TE85L,F) RN1602(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1604 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+4.75 грн
6000+ 4.12 грн
Мінімальне замовлення: 3000
RN1903,LF(CT RN1903,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
товар відсутній
RN1904(T5L,F,T) RN1904(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANSISTOR NPN US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN1906(T5L,F,T) RN1906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1961FE(TE85L,F) RN1961FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1961FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1962FE(TE85L,F) RN1962FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1963FE(TE85L,F) RN1963FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1964FE(TE85L,F) RN1964FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1965FE(TE85L,F) RN1965FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2PNP PREBIAS 0.1W ES6
товар відсутній
RN1966FE(TE85L,F) RN1966FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
RN2506(TE85L,F) RN2506(TE85L,F) Toshiba Semiconductor and Storage RN2501_datasheet_en_20191119.pdf?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.45 грн
Мінімальне замовлення: 3000
RN2711(TE85L,F) RN2711(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18905&prodName=RN2711 Description: TRANS 2PNP PREBIAS 0.2W USV
товар відсутній
RN4603(TE85L,F) RN4603(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18926&prodName=RN4603 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
товар відсутній
RN4606(TE85L,F) RN4606(TE85L,F) Toshiba Semiconductor and Storage RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.75 грн
Мінімальне замовлення: 3000
RN4906(T5L,F,T) RN4906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4981,LF(CT RN4981,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981 Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
RN4983(T5L,F,T) RN4983(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4983 Description: TRANS NPN PNP 50V 100MA US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
RN4984(T5L,F,T) RN4984(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984 Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4985,LF(CT RN4985,LF(CT Toshiba Semiconductor and Storage RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
товар відсутній
RN4986(T5L,F,T) RN4986(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4986 Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4988(T5L,F,T) RN4988(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988 Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4989(T5L,F,T) RN4989(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989 Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4990(T5L,F,T) RN4990(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990 Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4991(T5L,F,T) RN4991(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18994&prodName=RN4991 Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SSM3J118TU(TE85L) SSM3J118TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?did=7050&prodName=SSM3J118TU Description: MOSFET P-CH 30V 1.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
товар відсутній
SSM3J15CT(TPL3) SSM3J15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT Description: MOSFET P-CH 30V 0.1A CST3
товар відсутній
SSM3J16CT(TPL3) SSM3J16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT Description: MOSFET P-CH 20V 0.1A CST3
товар відсутній
SSM3J304T(TE85L,F) SSM3J304T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7567&prodName=SSM3J304T Description: MOSFET P-CH 20V 2.3A TSM
товар відсутній
SSM3J306T(TE85L,F) SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7571&prodName=SSM3J306T Description: MOSFET P-CH 30V 2.4A TSM
товар відсутній
SSM3J325F,LF SSM3J325F,LF Toshiba Semiconductor and Storage SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товар відсутній
SSM3J35MFV,L3F SSM3J35MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=10000&prodName=SSM3J35MFV Description: MOSFET P-CH 20V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
8000+2.42 грн
16000+ 2.1 грн
24000+ 1.98 грн
40000+ 1.74 грн
Мінімальне замовлення: 8000
SSM3J36MFV,L3F SSM3J36MFV,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV Description: MOSFET P-CH 20V 0.33A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
SSM3J56MFV,L3F SSM3J56MFV,L3F Toshiba Semiconductor and Storage SSM3J56MFV_datasheet_en_20140301.pdf?did=7801&prodName=SSM3J56MFV Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
на замовлення 416000 шт:
термін постачання 21-31 дні (днів)
8000+5.5 грн
16000+ 4.58 грн
24000+ 4.5 грн
56000+ 3.5 грн
Мінімальне замовлення: 8000
SSM3K01T(TE85L,F) SSM3K01T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K01T Description: MOSFET N-CH 30V 3.2A TSM
товар відсутній
SSM3K16CT(TPL3) SSM3K16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
товар відсутній
SSM3K301T(TE85L,F) SSM3K301T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K301T Description: MOSFET N-CH 20V 3.5A TSM
товар відсутній
SSM3K302T(TE85L,F) SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage SSM3K302T.pdf Description: MOSFET N-CH 30V 3A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товар відсутній
SSM3K309T(TE85L,F) SSM3K309T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K309T Description: MOSFET N-CH 20V 4.7A TSM
товар відсутній
SSM3K310T(TE85L,F) SSM3K310T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K310T Description: MOSFET N-CH 20V 5A S-MOS
товар відсутній
SSM3K318T,LF SSM3K318T,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
товар відсутній
SSM3K7002BF,LF SSM3K7002BF,LF Toshiba Semiconductor and Storage SSM3K7002BF.pdf Description: MOSFET N-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
товар відсутній
SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU Description: MOSFET N/P-CH 20V 0.5A UF6 S
товар відсутній
SSM6L16FE(TE85L,F) SSM6L16FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE Description: MOSFET N/P-CH 20V 0.1A ES6
товар відсутній
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=11256&prodName=SSM6L35FU Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
SSM6N58NU,LF SSM6N58NU,LF Toshiba Semiconductor and Storage SSM6N58NU_datasheet_en_20210917.pdf?did=13890&prodName=SSM6N58NU Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)
3000+9.06 грн
6000+ 7.95 грн
9000+ 7.56 грн
15000+ 6.68 грн
21000+ 6.43 грн
30000+ 6.19 грн
75000+ 5.9 грн
Мінімальне замовлення: 3000
TAR5SB18(TE85L,F) TAR5SB18(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TAR5SB18 Description: IC REG LDO 1.8V 0.2A SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
TAR5SB30(TE85L,F) TAR5SB30(TE85L,F) Toshiba Semiconductor and Storage TAR5SB30_datasheet_en_20140301.pdf?did=18320&prodName=TAR5SB30 Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
товар відсутній
TAR5SB33(TE85L,F) TAR5SB33(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18320&prodName=TAR5SB49 Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
3000+12.47 грн
6000+ 10.94 грн
9000+ 10.39 грн
15000+ 9.18 грн
21000+ 8.84 грн
30000+ 8.51 грн
Мінімальне замовлення: 3000
TAR5SB50(TE85L,F) TAR5SB50(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18320&prodName=TAR5SB49 Description: IC REG LINEAR 5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
товар відсутній
TC4050BF(EL,N,F) TC4050BF(EL,N,F) Toshiba Semiconductor and Storage docget.jsp?did=18381&prodName=TC4050BP Description: IC BUFFER NON-INVERT 18V 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 48mA
Supplier Device Package: 16-SOP
Part Status: Active
товар відсутній
TC4584BF(EL,N,F) TC4584BF(EL,N,F) Toshiba Semiconductor and Storage TC4584BF_datasheet_en_20140301.pdf?did=20900&prodName=TC4584BF Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+20.01 грн
Мінімальне замовлення: 2000
RN1114(T5L,F,T) docget.jsp?did=18763&prodName=RN1115
RN1114(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
товар відсутній
RN1115,LF(CT docget.jsp?did=18763&prodName=RN1115
RN1115,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN1117(T5L,F,T)
RN1117(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
RN1118(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1114
RN1118(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
товар відсутній
RN1130MFV,L3F docget.jsp?did=949&prodName=RN1130MFV
RN1130MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
товар відсутній
RN1131MFV(TL3,T)
RN1131MFV(TL3,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
товар відсутній
RN1303(TE85L,F) docget.jsp?did=18776&prodName=RN1302
RN1303(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
товар відсутній
RN1310(TE85L,F) docget.jsp?did=18781&prodName=RN1310
RN1310(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
товар відсутній
RN1507(TE85L,F)
RN1507(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
товар відсутній
RN1602(TE85L,F) docget.jsp?did=18809&prodName=RN1604
RN1602(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.75 грн
6000+ 4.12 грн
Мінімальне замовлення: 3000
RN1903,LF(CT RN190x.pdf
RN1903,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
товар відсутній
RN1904(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN1906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1961FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1961FE
RN1961FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1962FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1962FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1963FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1963FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1964FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1964FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1965FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1965FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
товар відсутній
RN1966FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1966FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
RN2506(TE85L,F) RN2501_datasheet_en_20191119.pdf?did=18887&prodName=RN2501
RN2506(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.45 грн
Мінімальне замовлення: 3000
RN2711(TE85L,F) docget.jsp?did=18905&prodName=RN2711
RN2711(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV
товар відсутній
RN4603(TE85L,F) docget.jsp?did=18926&prodName=RN4603
RN4603(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
товар відсутній
RN4606(TE85L,F) RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606
RN4606(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.75 грн
Мінімальне замовлення: 3000
RN4906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4906
RN4906(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4981,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4981
RN4981,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
RN4983(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4983
RN4983(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
RN4984(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4984
RN4984(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4985,LF(CT RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985
RN4985,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
товар відсутній
RN4986(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4986
RN4986(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4988(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4988
RN4988(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4989(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4989
RN4989(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4990(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990
RN4990(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4991(T5L,F,T) docget.jsp?did=18994&prodName=RN4991
RN4991(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SSM3J118TU(TE85L) docget.jsp?did=7050&prodName=SSM3J118TU
SSM3J118TU(TE85L)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
товар відсутній
SSM3J15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT
SSM3J15CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
товар відсутній
SSM3J16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT
SSM3J16CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
товар відсутній
SSM3J304T(TE85L,F) docget.jsp?did=7567&prodName=SSM3J304T
SSM3J304T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.3A TSM
товар відсутній
SSM3J306T(TE85L,F) docget.jsp?did=7571&prodName=SSM3J306T
SSM3J306T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.4A TSM
товар відсутній
SSM3J325F,LF SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F
SSM3J325F,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товар відсутній
SSM3J35MFV,L3F docget.jsp?did=10000&prodName=SSM3J35MFV
SSM3J35MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+2.42 грн
16000+ 2.1 грн
24000+ 1.98 грн
40000+ 1.74 грн
Мінімальне замовлення: 8000
SSM3J36MFV,L3F docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV
SSM3J36MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.33A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
SSM3J56MFV,L3F SSM3J56MFV_datasheet_en_20140301.pdf?did=7801&prodName=SSM3J56MFV
SSM3J56MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
на замовлення 416000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+5.5 грн
16000+ 4.58 грн
24000+ 4.5 грн
56000+ 3.5 грн
Мінімальне замовлення: 8000
SSM3K01T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K01T
SSM3K01T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3.2A TSM
товар відсутній
SSM3K16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT
SSM3K16CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
товар відсутній
SSM3K301T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K301T
SSM3K301T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.5A TSM
товар відсутній
SSM3K302T(TE85L,F) SSM3K302T.pdf
SSM3K302T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товар відсутній
SSM3K309T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K309T
SSM3K309T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.7A TSM
товар відсутній
SSM3K310T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K310T
SSM3K310T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 5A S-MOS
товар відсутній
SSM3K318T,LF docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
товар відсутній
SSM3K7002BF,LF SSM3K7002BF.pdf
SSM3K7002BF,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
товар відсутній
SSM6L11TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU
SSM6L11TU(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6 S
товар відсутній
SSM6L16FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE
SSM6L16FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.1A ES6
товар відсутній
SSM6L35FU(TE85L,F) docget.jsp?did=11256&prodName=SSM6L35FU
SSM6L35FU(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
SSM6N58NU,LF SSM6N58NU_datasheet_en_20210917.pdf?did=13890&prodName=SSM6N58NU
SSM6N58NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.06 грн
6000+ 7.95 грн
9000+ 7.56 грн
15000+ 6.68 грн
21000+ 6.43 грн
30000+ 6.19 грн
75000+ 5.9 грн
Мінімальне замовлення: 3000
TAR5SB18(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TAR5SB18
TAR5SB18(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
TAR5SB30(TE85L,F) TAR5SB30_datasheet_en_20140301.pdf?did=18320&prodName=TAR5SB30
TAR5SB30(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
товар відсутній
TAR5SB33(TE85L,F) docget.jsp?did=18320&prodName=TAR5SB49
TAR5SB33(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+12.47 грн
6000+ 10.94 грн
9000+ 10.39 грн
15000+ 9.18 грн
21000+ 8.84 грн
30000+ 8.51 грн
Мінімальне замовлення: 3000
TAR5SB50(TE85L,F) docget.jsp?did=18320&prodName=TAR5SB49
TAR5SB50(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 850 µA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.2V @ 50mA
Protection Features: Over Current, Over Temperature
товар відсутній
TC4050BF(EL,N,F) docget.jsp?did=18381&prodName=TC4050BP
TC4050BF(EL,N,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 18V 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 48mA
Supplier Device Package: 16-SOP
Part Status: Active
товар відсутній
TC4584BF(EL,N,F) TC4584BF_datasheet_en_20140301.pdf?did=20900&prodName=TC4584BF
TC4584BF(EL,N,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+20.01 грн
Мінімальне замовлення: 2000
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