Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13264) > Сторінка 106 з 222
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DF2S6.2CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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DF2S7MSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 60W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DF3D18FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USM Bidirectional Channels: 2 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 24VC UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UF6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: Yes |
товар відсутній |
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SSM3J338R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
на замовлення 343700 шт: термін постачання 21-31 дні (днів) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.4A CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 170000 шт: термін постачання 21-31 дні (днів) |
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SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
товар відсутній |
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SSM3K72CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3C Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SSM6J512NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 10A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
товар відсутній |
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SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
товар відсутній |
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SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
на замовлення 342000 шт: термін постачання 21-31 дні (днів) |
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1SS302A,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 13066 шт: термін постачання 21-31 дні (днів) |
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1SS307E,L3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC79 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 6pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-79 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 80 V |
на замовлення 70571 шт: термін постачання 21-31 дні (днів) |
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1SS413CT,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA SOD882 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: CST2 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 39880 шт: термін постачання 21-31 дні (днів) |
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DF2B18FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 26868 шт: термін постачання 21-31 дні (днів) |
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DF2B29FU,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC USC |
на замовлення 27850 шт: термін постачання 21-31 дні (днів) |
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DF2S10FS,L3M | Toshiba Semiconductor and Storage | Description: TVS DIODE 8V FSC |
на замовлення 11520 шт: термін постачання 21-31 дні (днів) |
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DF2S12FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 9VWM 18.5VC SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Voltage - Reverse Standoff (Typ): 9V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 18.5V Power Line Protection: No |
на замовлення 21312 шт: термін постачання 21-31 дні (днів) |
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DF2S16FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Power Line Protection: No |
на замовлення 48573 шт: термін постачання 21-31 дні (днів) |
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DF2S20CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No Part Status: Active |
на замовлення 14415 шт: термін постачання 21-31 дні (днів) |
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DF2S20FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No |
на замовлення 29889 шт: термін постачання 21-31 дні (днів) |
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DF2S24FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 19V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Power Line Protection: No |
на замовлення 44083 шт: термін постачання 21-31 дні (днів) |
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DF2S30CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7.2pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No Part Status: Active |
на замовлення 9010 шт: термін постачання 21-31 дні (днів) |
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DF2S30FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No |
на замовлення 62632 шт: термін постачання 21-31 дні (днів) |
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DF2S5.1FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
на замовлення 25805 шт: термін постачання 21-31 дні (днів) |
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DF2S5.6FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
на замовлення 53323 шт: термін постачання 21-31 дні (днів) |
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DF2S6.2CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 106044 шт: термін постачання 21-31 дні (днів) |
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DF2S7MSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 60W Power Line Protection: No |
на замовлення 20813 шт: термін постачання 21-31 дні (днів) |
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DF3D18FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USM Bidirectional Channels: 2 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 16576 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
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DF3D6.8MS,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 11VC SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SSM Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: Yes |
на замовлення 24395 шт: термін постачання 21-31 дні (днів) |
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DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 24VC UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UF6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: Yes |
товар відсутній |
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SSM3J338R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
на замовлення 345734 шт: термін постачання 21-31 дні (днів) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
на замовлення 45323 шт: термін постачання 21-31 дні (днів) |
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SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.4A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 186498 шт: термін постачання 21-31 дні (днів) |
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SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 11060 шт: термін постачання 21-31 дні (днів) |
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SSM3K72CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3C Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 10005 шт: термін постачання 21-31 дні (днів) |
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SSM6J512NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
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SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
на замовлення 4160 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
на замовлення 345697 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 47VC |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
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TLP3906(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PHVOLT SO6 Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 12µA Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 300µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TLP3906(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PHVOLT SO6 Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 12µA Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 300µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 22058 шт: термін постачання 21-31 дні (днів) |
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TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
товар відсутній |
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TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
на замовлення 5414 шт: термін постачання 21-31 дні (днів) |
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TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
на замовлення 9795 шт: термін постачання 21-31 дні (днів) |
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74LCX157FT(AJ) | Toshiba Semiconductor and Storage | Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP |
товар відсутній |
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74VHC393FT | Toshiba Semiconductor and Storage |
Description: IC BIN COUNTER DL 4BIT 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-TSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 115 MHz Number of Bits per Element: 4 |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TLP7920(F | Toshiba Semiconductor and Storage |
Description: IC OPAMP ISOLATION 1 CIRC 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Amplifier Type: Isolation Operating Temperature: -40°C ~ 105°C Current - Supply: 12mA Current - Input Bias: 55 nA Voltage - Input Offset: 730 µV Supplier Device Package: 8-DIP Part Status: Active Number of Circuits: 1 -3db Bandwidth: 230 kHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TLP7820(TP4,E | Toshiba Semiconductor and Storage |
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Differential Mounting Type: Surface Mount Amplifier Type: Isolation Operating Temperature: -40°C ~ 105°C Current - Supply: 12mA Current - Input Bias: 5.5 nA Voltage - Input Offset: 900 µV Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 1 -3db Bandwidth: 230 kHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP7820(TP4,E | Toshiba Semiconductor and Storage |
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Differential Mounting Type: Surface Mount Amplifier Type: Isolation Operating Temperature: -40°C ~ 105°C Current - Supply: 12mA Current - Input Bias: 5.5 nA Voltage - Input Offset: 900 µV Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 1 -3db Bandwidth: 230 kHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 4494 шт: термін постачання 21-31 дні (днів) |
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TB67B000HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP Packaging: Tray Package / Case: 30-PowerDIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -30°C ~ 115°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Applications: General Purpose Technology: IGBT Voltage - Load: 50V ~ 450V Supplier Device Package: 30-HDIP Motor Type - AC, DC: Brushless DC (BLDC) |
товар відсутній |
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TLP2745(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TLP2748(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP2745(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 13569 шт: термін постачання 21-31 дні (днів) |
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TLP2748(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV PUSH PULL SO6L Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 3ns, 3ns Common Mode Transient Immunity (Min): 30kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 7792 шт: термін постачання 21-31 дні (днів) |
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74HC164D | Toshiba Semiconductor and Storage |
Description: IC SHIFT REGISTER 8BIT 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 14-SOP Part Status: Active Number of Bits per Element: 8 |
на замовлення 38644 шт: термін постачання 21-31 дні (днів) |
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DF2S6.2CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.9 грн |
20000+ | 1.65 грн |
30000+ | 1.55 грн |
50000+ | 1.36 грн |
70000+ | 1.3 грн |
DF2S7MSL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.56 грн |
DF3D18FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.08 грн |
6000+ | 7.08 грн |
9000+ | 6.72 грн |
15000+ | 5.93 грн |
DF3D29FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)DF6F6.8MTU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
товар відсутній
SSM3J338R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
на замовлення 343700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.48 грн |
6000+ | 6.54 грн |
9000+ | 6.21 грн |
15000+ | 5.47 грн |
21000+ | 5.26 грн |
30000+ | 5.06 грн |
75000+ | 4.66 грн |
SSM3J356R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.25 грн |
6000+ | 5.45 грн |
9000+ | 5.16 грн |
15000+ | 4.54 грн |
21000+ | 4.36 грн |
30000+ | 4.18 грн |
SSM3K56ACT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 170000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.77 грн |
SSM3K56MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
товар відсутній
SSM3K72CTC,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.06 грн |
SSM6J512NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
товар відсутній
SSM6K504NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
товар відсутній
SSM6N7002KFU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
на замовлення 342000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.89 грн |
6000+ | 2.48 грн |
9000+ | 2.33 грн |
15000+ | 2.03 грн |
21000+ | 1.94 грн |
30000+ | 1.85 грн |
75000+ | 1.62 грн |
150000+ | 1.49 грн |
300000+ | 1.4 грн |
1SS302A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 13066 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 13.23 грн |
39+ | 7.72 грн |
100+ | 4.8 грн |
500+ | 3.28 грн |
1000+ | 2.89 грн |
1SS307E,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
на замовлення 70571 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.56 грн |
62+ | 4.87 грн |
101+ | 2.99 грн |
500+ | 2.04 грн |
1000+ | 1.79 грн |
2000+ | 1.58 грн |
1SS413CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 39880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 17.12 грн |
31+ | 9.74 грн |
100+ | 6.05 грн |
500+ | 4.17 грн |
1000+ | 3.68 грн |
2000+ | 3.26 грн |
5000+ | 2.77 грн |
DF2B18FU,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 26868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.12 грн |
19+ | 16.04 грн |
100+ | 8.1 грн |
500+ | 6.2 грн |
1000+ | 4.6 грн |
DF2B29FU,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Description: TVS DIODE 24VWM 47VC USC
на замовлення 27850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.23 грн |
16+ | 19.18 грн |
100+ | 10.86 грн |
500+ | 6.75 грн |
1000+ | 5.17 грн |
DF2S10FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8V FSC
Description: TVS DIODE 8V FSC
на замовлення 11520 шт:
термін постачання 21-31 дні (днів)DF2S12FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
на замовлення 21312 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S16FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
на замовлення 48573 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S20CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
на замовлення 14415 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
45+ | 6.74 грн |
100+ | 4.13 грн |
500+ | 2.81 грн |
1000+ | 2.47 грн |
2000+ | 2.18 грн |
5000+ | 1.83 грн |
DF2S20FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
на замовлення 29889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S24FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
на замовлення 44083 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S30CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
на замовлення 9010 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 14.01 грн |
25+ | 12.36 грн |
100+ | 6.71 грн |
500+ | 3.88 грн |
1000+ | 2.64 грн |
2000+ | 2.25 грн |
5000+ | 1.99 грн |
DF2S30FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
на замовлення 62632 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S5.1FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
на замовлення 25805 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S5.6FS,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
на замовлення 53323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.89 грн |
47+ | 6.44 грн |
100+ | 3.99 грн |
500+ | 2.72 грн |
1000+ | 2.38 грн |
2000+ | 2.1 грн |
5000+ | 1.76 грн |
DF2S6.2CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 106044 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 11.67 грн |
44+ | 6.89 грн |
100+ | 4.26 грн |
500+ | 2.9 грн |
1000+ | 2.54 грн |
2000+ | 2.24 грн |
5000+ | 1.89 грн |
DF2S7MSL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 20813 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 20.23 грн |
23+ | 13.11 грн |
100+ | 6.39 грн |
500+ | 5 грн |
1000+ | 3.48 грн |
2000+ | 3.01 грн |
5000+ | 2.75 грн |
DF3D18FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 16576 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.57 грн |
14+ | 21.51 грн |
100+ | 13.65 грн |
500+ | 9.63 грн |
1000+ | 8.61 грн |
DF3D29FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)DF3D6.8MS,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
на замовлення 24395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.56 грн |
34+ | 9.07 грн |
100+ | 5.65 грн |
500+ | 3.88 грн |
1000+ | 3.42 грн |
DF6F6.8MTU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
товар відсутній
SSM3J338R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
на замовлення 345734 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.46 грн |
15+ | 20.08 грн |
100+ | 12.71 грн |
500+ | 8.95 грн |
1000+ | 7.99 грн |
SSM3J356R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
на замовлення 45323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.79 грн |
18+ | 17.01 грн |
100+ | 10.76 грн |
500+ | 7.54 грн |
1000+ | 6.71 грн |
SSM3K56ACT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 186498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.68 грн |
14+ | 22.1 грн |
100+ | 11.16 грн |
500+ | 8.54 грн |
1000+ | 6.34 грн |
2000+ | 5.33 грн |
5000+ | 5.01 грн |
SSM3K56MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 11060 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.68 грн |
20+ | 15.29 грн |
100+ | 9.62 грн |
500+ | 6.71 грн |
1000+ | 5.96 грн |
2000+ | 5.33 грн |
SSM3K72CTC,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 10005 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 23.34 грн |
17+ | 18.58 грн |
100+ | 9.87 грн |
500+ | 6.09 грн |
1000+ | 4.14 грн |
2000+ | 3.74 грн |
5000+ | 3.2 грн |
SSM6J512NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.12 грн |
18+ | 17.61 грн |
100+ | 10.58 грн |
500+ | 9.19 грн |
1000+ | 6.48 грн |
SSM6K504NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
на замовлення 4160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.01 грн |
14+ | 21.73 грн |
100+ | 14.78 грн |
500+ | 10.4 грн |
1000+ | 7.8 грн |
SSM6N7002KFU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
на замовлення 345697 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.78 грн |
36+ | 8.39 грн |
100+ | 5.23 грн |
500+ | 3.58 грн |
1000+ | 3.16 грн |
DF3D29FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)TLP3906(TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 46 грн |
6000+ | 42.55 грн |
9000+ | 41.68 грн |
15000+ | 38.22 грн |
TLP3906(TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 22058 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 136.17 грн |
10+ | 84.3 грн |
100+ | 60.26 грн |
500+ | 47.66 грн |
1000+ | 44.93 грн |
TPH1R204PL,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
товар відсутній
TPH1R005PL,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 57.9 грн |
TPH1R204PL,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
на замовлення 5414 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 146.29 грн |
10+ | 89.92 грн |
100+ | 60.87 грн |
500+ | 45.45 грн |
1000+ | 41.69 грн |
2000+ | 38.52 грн |
TPH1R005PL,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
на замовлення 9795 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.42 грн |
10+ | 119.14 грн |
100+ | 81.91 грн |
500+ | 61.89 грн |
1000+ | 57.07 грн |
2000+ | 53.02 грн |
74LCX157FT(AJ) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
товар відсутній
74VHC393FT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 9.54 грн |
5000+ | 8.31 грн |
7500+ | 7.86 грн |
12500+ | 6.91 грн |
17500+ | 6.63 грн |
25000+ | 6.36 грн |
TLP7920(F |
Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRC 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 55 nA
Voltage - Input Offset: 730 µV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ISOLATION 1 CIRC 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 55 nA
Voltage - Input Offset: 730 µV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 435.75 грн |
10+ | 294.55 грн |
TLP7820(TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 195.78 грн |
3000+ | 183.54 грн |
TLP7820(TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 4494 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 427.19 грн |
10+ | 288.33 грн |
100+ | 225.06 грн |
500+ | 187.75 грн |
TB67B000HG |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP
Packaging: Tray
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP
Packaging: Tray
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -30°C ~ 115°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - AC, DC: Brushless DC (BLDC)
товар відсутній
TLP2745(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.82 грн |
3000+ | 26.27 грн |
4500+ | 25.54 грн |
7500+ | 23.2 грн |
10500+ | 22.75 грн |
TLP2748(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.93 грн |
3000+ | 26.47 грн |
TLP2745(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 13569 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.26 грн |
10+ | 54.1 грн |
100+ | 37.38 грн |
500+ | 28.89 грн |
TLP2748(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 7792 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 81.7 грн |
10+ | 49.75 грн |
100+ | 36.81 грн |
500+ | 31.75 грн |
74HC164D |
Виробник: Toshiba Semiconductor and Storage
Description: IC SHIFT REGISTER 8BIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOP
Part Status: Active
Number of Bits per Element: 8
Description: IC SHIFT REGISTER 8BIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOP
Part Status: Active
Number of Bits per Element: 8
на замовлення 38644 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53.69 грн |
10+ | 31.1 грн |
25+ | 25.69 грн |
100+ | 18.33 грн |
250+ | 15.5 грн |
500+ | 13.75 грн |
1000+ | 12.08 грн |