Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164773) > Сторінка 264 з 2747
Фото | Назва | Виробник | Інформація |
Доступність |
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TS972IYPT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 2mA (x2 Channels) Slew Rate: 4V/µs Gain Bandwidth Product: 12 MHz Current - Input Bias: 200 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-TSSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 100 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 10 V Qualification: AEC-Q100 |
товару немає в наявності |
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TS974IYDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SO Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 2mA (x4 Channels) Slew Rate: 4V/µs Gain Bandwidth Product: 12 MHz Current - Input Bias: 200 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SO Number of Circuits: 4 Current - Output / Channel: 100 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 10 V |
на замовлення 2085 шт: термін постачання 21-31 дні (днів) |
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TS974IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 2mA (x4 Channels) Slew Rate: 4V/µs Gain Bandwidth Product: 12 MHz Current - Input Bias: 200 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 100 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 10 V |
на замовлення 2822 шт: термін постачання 21-31 дні (днів) |
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TS982IYDWT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 5.5mA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 2.2 MHz Current - Input Bias: 200 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SO Number of Circuits: 2 Current - Output / Channel: 200 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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TSC101AIYLT | STMicroelectronics |
Description: IC CURR SENSE 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C Current - Supply: 165µA Slew Rate: 0.9V/µs Current - Input Bias: 5.5 µA Voltage - Input Offset: 200 µV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 60 mA -3db Bandwidth: 500 kHz Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 24 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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TSC101CIYLT | STMicroelectronics |
Description: IC CURR SENSE 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C Current - Supply: 165µA Slew Rate: 0.9V/µs Current - Input Bias: 5.5 µA Voltage - Input Offset: 200 µV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 60 mA -3db Bandwidth: 450 kHz Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 24 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 31711 шт: термін постачання 21-31 дні (днів) |
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TSH82IYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 9.8mA Slew Rate: 118V/µs Gain Bandwidth Product: 65 MHz Current - Input Bias: 6 µA Voltage - Input Offset: 800 µV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 55 mA -3db Bandwidth: 100 MHz Voltage - Supply Span (Min): 4.5 V Voltage - Supply Span (Max): 12 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 602 шт: термін постачання 21-31 дні (днів) |
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TSV321RIYLT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 500µA Slew Rate: 0.6V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 200 µV Supplier Device Package: SOT-23-5 Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 6 V Qualification: AEC-Q100 |
товару немає в наявності |
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TSV324IYDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SO Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 500µA Slew Rate: 0.6V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 200 µV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 6 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2334 шт: термін постачання 21-31 дні (днів) |
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TSV358IYPT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 500µA Slew Rate: 0.6V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 200 µV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 6 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3090 шт: термін постачання 21-31 дні (днів) |
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TSV991IYLT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 820µA Slew Rate: 10V/µs Gain Bandwidth Product: 20 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 100 µV Supplier Device Package: SOT-23-5 Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 13786 шт: термін постачання 21-31 дні (днів) |
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ULQ2003D1013TRY | STMicroelectronics |
Description: TRANS 7NPN DARL 50V 0.5A 16SO Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 7 NPN Darlington Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Supplier Device Package: 16-SO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 44091 шт: термін постачання 21-31 дні (днів) |
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LM258WYST | STMicroelectronics | Description: IC OPAMP GP 1.1MHZ 8MINISO |
товару немає в наявності |
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2STD1360T4 | STMicroelectronics |
Description: TRANS NPN 60V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 130MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 15 W |
товару немає в наявності |
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2STD2360T4 | STMicroelectronics | Description: TRANS PNP 60V 3A DPAK |
товару немає в наявності |
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ACST4-8CB-TR | STMicroelectronics |
Description: TRIAC 800V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 25 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Voltage - Gate Trigger (Vgt) (Max): 1.1 V Supplier Device Package: DPAK Part Status: Obsolete Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
товару немає в наявності |
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ACST4-8CFP | STMicroelectronics |
Description: TRIAC 800V 4A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 25 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Voltage - Gate Trigger (Vgt) (Max): 1.1 V Supplier Device Package: TO-220FP Part Status: Obsolete Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
товару немає в наявності |
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ACST4-8SB-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: DPAK Part Status: Obsolete Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
товару немає в наявності |
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ACST4-8SFP | STMicroelectronics |
Description: TRIAC SENS GATE 800V 4A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220FP Part Status: Obsolete Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
товару немає в наявності |
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EMIF03-SIM02C2 | STMicroelectronics |
Description: FILTER RC(PI) ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-WFBGA, FCBGA Size / Dimension: 0.056" L x 0.056" W (1.42mm x 1.42mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 20pF Height: 0.030" (0.76mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Part Status: Obsolete Number of Channels: 3 |
товару немає в наявності |
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ESDALC6V1-5T6 | STMicroelectronics |
Description: TVS DIODE 3VWM 6MICRO DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 6-Micro DFN (1x1) Unidirectional Channels: 5 Voltage - Breakdown (Min): 6.1V Power - Peak Pulse: 25W Power Line Protection: No |
товару немає в наявності |
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PD84006-E | STMicroelectronics |
Description: RF MOSFET LDMOS 7.5V POWERSO10 Packaging: Tube Package / Case: PowerSO-10 Exposed Bottom Pad Current Rating (Amps): 5A Frequency: 870MHz Power - Output: 6W Gain: 15dB Technology: LDMOS Supplier Device Package: 10-PowerSO Voltage - Rated: 25 V Voltage - Test: 7.5 V Current - Test: 150 mA |
товару немає в наявності |
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PD85006-E | STMicroelectronics |
Description: RF MOSFET LDMOS 13.6V POWERSO10 Packaging: Tube Package / Case: PowerSO-10 Exposed Bottom Pad Current Rating (Amps): 2A Frequency: 870MHz Power - Output: 6W Gain: 17dB Technology: LDMOS Supplier Device Package: 10-PowerSO Voltage - Rated: 40 V Voltage - Test: 13.6 V Current - Test: 200 mA |
товару немає в наявності |
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SMX1J7.5A-TR | STMicroelectronics | Description: TVS DIODE 7.5VWM 20VC 2UQFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ST13003-K | STMicroelectronics |
Description: TRANS NPN 400V 1.5A SOT32-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Supplier Device Package: SOT-32-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 40 W |
на замовлення 2384 шт: термін постачання 21-31 дні (днів) |
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STB18NF25 | STMicroelectronics |
Description: MOSFET N-CH 250V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STB18NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
товару немає в наявності |
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STB22NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 16A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
товару немає в наявності |
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STD18NF25 | STMicroelectronics |
Description: MOSFET N-CH 250V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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STF18NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 13A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
на замовлення 925 шт: термін постачання 21-31 дні (днів) |
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STF22NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 16A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 985 шт: термін постачання 21-31 дні (днів) |
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STK30N2LLH5 | STMicroelectronics | Description: MOSFET N-CH 25V 30A POLARPAK |
товару немає в наявності |
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STL73D-AP | STMicroelectronics | Description: TRANS NPN 400V 1.5A TO92-3 |
товару немає в наявності |
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STP12N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 8.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
товару немає в наявності |
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STP18NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 13A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
на замовлення 1368 шт: термін постачання 21-31 дні (днів) |
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STP22NM60N | STMicroelectronics |
Description: N-channel 600 V, 0.2 Ohm, 16 A Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 908 шт: термін постачання 21-31 дні (днів) |
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STP95N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
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STPSC1206D | STMicroelectronics |
Description: DIODE SIL CARB 600V 12A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 150 µA @ 600 V |
товару немає в наявності |
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STPSC606D | STMicroelectronics |
Description: DIODE SIL CARB 600V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 375pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 75 µA @ 600 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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STS11N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +22V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 25 V |
товару немає в наявності |
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TS1220-600T | STMicroelectronics | Description: SCR 600V 12A TO220AB |
товару немає в наявності |
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2STD1360T4 | STMicroelectronics |
Description: TRANS NPN 60V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 130MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 15 W |
товару немає в наявності |
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2STD2360T4 | STMicroelectronics | Description: TRANS PNP 60V 3A DPAK |
товару немає в наявності |
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ACST4-8CB-TR | STMicroelectronics |
Description: TRIAC 800V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 25 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Voltage - Gate Trigger (Vgt) (Max): 1.1 V Supplier Device Package: DPAK Part Status: Obsolete Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
товару немає в наявності |
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ESDALC6V1-5T6 | STMicroelectronics |
Description: TVS DIODE 3VWM 6MICRO DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 6-Micro DFN (1x1) Unidirectional Channels: 5 Voltage - Breakdown (Min): 6.1V Power - Peak Pulse: 25W Power Line Protection: No |
товару немає в наявності |
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MJD31CT4-A | STMicroelectronics |
Description: TRANS NPN 100V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 15 W |
на замовлення 6556 шт: термін постачання 21-31 дні (днів) |
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MJD32CT4-A | STMicroelectronics |
Description: TRANS PNP 100V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 15 W |
на замовлення 2644 шт: термін постачання 21-31 дні (днів) |
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SMX1J7.5A-TR | STMicroelectronics | Description: TVS DIODE 7.5VWM 20VC 2UQFN |
на замовлення 5755 шт: термін постачання 21-31 дні (днів) |
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STB18NF25 | STMicroelectronics |
Description: MOSFET N-CH 250V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1907 шт: термін постачання 21-31 дні (днів) |
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STB18NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
товару немає в наявності |
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STB22NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 16A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
товару немає в наявності |
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STB45NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 38A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V |
товару немає в наявності |
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STD18NF25 | STMicroelectronics |
Description: MOSFET N-CH 250V 17A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9382 шт: термін постачання 21-31 дні (днів) |
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STK30N2LLH5 | STMicroelectronics | Description: MOSFET N-CH 25V 30A POLARPAK |
товару немає в наявності |
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STL73D-AP | STMicroelectronics | Description: TRANS NPN 400V 1.5A TO92-3 |
товару немає в наявності |
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STN4NF06L | STMicroelectronics |
Description: MOSFET N-CH 60V 4A SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V |
на замовлення 906 шт: термін постачання 21-31 дні (днів) |
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STS11N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +22V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 25 V |
товару немає в наявності |
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STTH30L06CG-TR | STMicroelectronics |
Description: DIODE ARRAY GP 600V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
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2STD2360T4 | STMicroelectronics | Description: TRANS PNP 60V 3A DPAK |
товару немає в наявності |
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SMX1J7.5A-TR | STMicroelectronics | Description: TVS DIODE 7.5VWM 20VC 2UQFN |
на замовлення 5755 шт: термін постачання 21-31 дні (днів) |
TS972IYPT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2mA (x2 Channels)
Slew Rate: 4V/µs
Gain Bandwidth Product: 12 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 100 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2mA (x2 Channels)
Slew Rate: 4V/µs
Gain Bandwidth Product: 12 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 100 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Qualification: AEC-Q100
товару немає в наявності
TS974IYDT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2mA (x4 Channels)
Slew Rate: 4V/µs
Gain Bandwidth Product: 12 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SO
Number of Circuits: 4
Current - Output / Channel: 100 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2mA (x4 Channels)
Slew Rate: 4V/µs
Gain Bandwidth Product: 12 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SO
Number of Circuits: 4
Current - Output / Channel: 100 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
на замовлення 2085 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 116.69 грн |
10+ | 101.13 грн |
25+ | 95.43 грн |
100+ | 76.28 грн |
250+ | 71.63 грн |
500+ | 62.68 грн |
1000+ | 51.08 грн |
TS974IYPT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2mA (x4 Channels)
Slew Rate: 4V/µs
Gain Bandwidth Product: 12 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 100 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2mA (x4 Channels)
Slew Rate: 4V/µs
Gain Bandwidth Product: 12 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 100 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
на замовлення 2822 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 291.73 грн |
10+ | 252.61 грн |
25+ | 238.79 грн |
100+ | 194.21 грн |
250+ | 184.25 грн |
500+ | 165.32 грн |
1000+ | 137.14 грн |
TS982IYDWT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 5.5mA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SO
Number of Circuits: 2
Current - Output / Channel: 200 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 5.5mA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SO
Number of Circuits: 2
Current - Output / Channel: 200 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 267 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 244.13 грн |
10+ | 210.7 грн |
25+ | 199.16 грн |
100+ | 161.99 грн |
250+ | 153.68 грн |
TSC101AIYLT |
Виробник: STMicroelectronics
Description: IC CURR SENSE 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 165µA
Slew Rate: 0.9V/µs
Current - Input Bias: 5.5 µA
Voltage - Input Offset: 200 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 60 mA
-3db Bandwidth: 500 kHz
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 24 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CURR SENSE 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 165µA
Slew Rate: 0.9V/µs
Current - Input Bias: 5.5 µA
Voltage - Input Offset: 200 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 60 mA
-3db Bandwidth: 500 kHz
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 24 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
TSC101CIYLT |
Виробник: STMicroelectronics
Description: IC CURR SENSE 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 165µA
Slew Rate: 0.9V/µs
Current - Input Bias: 5.5 µA
Voltage - Input Offset: 200 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 60 mA
-3db Bandwidth: 450 kHz
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 24 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CURR SENSE 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 165µA
Slew Rate: 0.9V/µs
Current - Input Bias: 5.5 µA
Voltage - Input Offset: 200 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 60 mA
-3db Bandwidth: 450 kHz
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 24 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 31711 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 152.78 грн |
10+ | 131.81 грн |
25+ | 124.32 грн |
100+ | 99.41 грн |
250+ | 93.35 грн |
500+ | 81.68 грн |
1000+ | 66.57 грн |
TSH82IYDT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 9.8mA
Slew Rate: 118V/µs
Gain Bandwidth Product: 65 MHz
Current - Input Bias: 6 µA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 55 mA
-3db Bandwidth: 100 MHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 9.8mA
Slew Rate: 118V/µs
Gain Bandwidth Product: 65 MHz
Current - Input Bias: 6 µA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 55 mA
-3db Bandwidth: 100 MHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 602 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111.32 грн |
10+ | 95.66 грн |
25+ | 90.28 грн |
100+ | 72.18 грн |
250+ | 67.77 грн |
500+ | 59.3 грн |
TSV321RIYLT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 500µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 200 µV
Supplier Device Package: SOT-23-5
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 6 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 500µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 200 µV
Supplier Device Package: SOT-23-5
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 6 V
Qualification: AEC-Q100
товару немає в наявності
TSV324IYDT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 500µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 200 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 6 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 500µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 200 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 6 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2334 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.48 грн |
10+ | 92.48 грн |
25+ | 87.8 грн |
100+ | 67.67 грн |
250+ | 63.26 грн |
500+ | 55.91 грн |
1000+ | 43.41 грн |
TSV358IYPT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 500µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 6 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 500µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 6 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3090 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 95.2 грн |
10+ | 81.76 грн |
25+ | 77.57 грн |
100+ | 59.78 грн |
250+ | 55.89 грн |
500+ | 49.39 грн |
1000+ | 38.35 грн |
TSV991IYLT |
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.43 грн |
10+ | 81.32 грн |
25+ | 77.21 грн |
100+ | 59.51 грн |
250+ | 55.63 грн |
500+ | 49.16 грн |
1000+ | 38.18 грн |
ULQ2003D1013TRY |
Виробник: STMicroelectronics
Description: TRANS 7NPN DARL 50V 0.5A 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 7 NPN Darlington
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 16-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS 7NPN DARL 50V 0.5A 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 7 NPN Darlington
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 16-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 44091 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.53 грн |
10+ | 38.52 грн |
25+ | 36.55 грн |
100+ | 28.17 грн |
250+ | 26.33 грн |
500+ | 23.27 грн |
1000+ | 21.21 грн |
LM258WYST |
Виробник: STMicroelectronics
Description: IC OPAMP GP 1.1MHZ 8MINISO
Description: IC OPAMP GP 1.1MHZ 8MINISO
товару немає в наявності
2STD1360T4 |
Виробник: STMicroelectronics
Description: TRANS NPN 60V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 15 W
Description: TRANS NPN 60V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 15 W
товару немає в наявності
ACST4-8CB-TR |
Виробник: STMicroelectronics
Description: TRIAC 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товару немає в наявності
ACST4-8CFP |
Виробник: STMicroelectronics
Description: TRIAC 800V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC 800V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товару немає в наявності
ACST4-8SB-TR |
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товару немає в наявності
ACST4-8SFP |
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товару немає в наявності
EMIF03-SIM02C2 |
Виробник: STMicroelectronics
Description: FILTER RC(PI) ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.056" L x 0.056" W (1.42mm x 1.42mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 20pF
Height: 0.030" (0.76mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
Description: FILTER RC(PI) ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.056" L x 0.056" W (1.42mm x 1.42mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 20pF
Height: 0.030" (0.76mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
товару немає в наявності
ESDALC6V1-5T6 |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 6MICRO DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-Micro DFN (1x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 25W
Power Line Protection: No
Description: TVS DIODE 3VWM 6MICRO DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-Micro DFN (1x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 25W
Power Line Protection: No
товару немає в наявності
PD84006-E |
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 7.5V POWERSO10
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 5A
Frequency: 870MHz
Power - Output: 6W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: 10-PowerSO
Voltage - Rated: 25 V
Voltage - Test: 7.5 V
Current - Test: 150 mA
Description: RF MOSFET LDMOS 7.5V POWERSO10
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 5A
Frequency: 870MHz
Power - Output: 6W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: 10-PowerSO
Voltage - Rated: 25 V
Voltage - Test: 7.5 V
Current - Test: 150 mA
товару немає в наявності
PD85006-E |
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V POWERSO10
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 2A
Frequency: 870MHz
Power - Output: 6W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: 10-PowerSO
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 200 mA
Description: RF MOSFET LDMOS 13.6V POWERSO10
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 2A
Frequency: 870MHz
Power - Output: 6W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: 10-PowerSO
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 200 mA
товару немає в наявності
SMX1J7.5A-TR |
Виробник: STMicroelectronics
Description: TVS DIODE 7.5VWM 20VC 2UQFN
Description: TVS DIODE 7.5VWM 20VC 2UQFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)ST13003-K |
Виробник: STMicroelectronics
Description: TRANS NPN 400V 1.5A SOT32-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
Description: TRANS NPN 400V 1.5A SOT32-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
на замовлення 2384 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.33 грн |
10+ | 44.06 грн |
100+ | 30.43 грн |
500+ | 22.78 грн |
1000+ | 20.89 грн |
2000+ | 19.28 грн |
STB18NF25 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 59.31 грн |
STB18NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
товару немає в наявності
STB22NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 600V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
товару немає в наявності
STD18NF25 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 66.11 грн |
5000+ | 61.27 грн |
STF18NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
на замовлення 925 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 204.98 грн |
50+ | 107.24 грн |
100+ | 98.01 грн |
500+ | 76.56 грн |
STF22NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 600V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 376.18 грн |
50+ | 226.12 грн |
STK30N2LLH5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 30A POLARPAK
Description: MOSFET N-CH 25V 30A POLARPAK
товару немає в наявності
STL73D-AP |
Виробник: STMicroelectronics
Description: TRANS NPN 400V 1.5A TO92-3
Description: TRANS NPN 400V 1.5A TO92-3
товару немає в наявності
STP12N65M5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 650V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
товару немає в наявності
STP18NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
на замовлення 1368 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 195 грн |
50+ | 102.01 грн |
100+ | 93.15 грн |
500+ | 72.64 грн |
1000+ | 68.3 грн |
STP22NM60N |
Виробник: STMicroelectronics
Description: N-channel 600 V, 0.2 Ohm, 16 A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: N-channel 600 V, 0.2 Ohm, 16 A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 908 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 285.59 грн |
50+ | 153.09 грн |
100+ | 140.68 грн |
500+ | 111.81 грн |
STP95N3LLH6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
STPSC1206D |
Виробник: STMicroelectronics
Description: DIODE SIL CARB 600V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Description: DIODE SIL CARB 600V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
товару немає в наявності
STPSC606D |
Виробник: STMicroelectronics
Description: DIODE SIL CARB 600V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
Description: DIODE SIL CARB 600V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 275.61 грн |
STS11N3LLH5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 25 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 25 V
товару немає в наявності
2STD1360T4 |
Виробник: STMicroelectronics
Description: TRANS NPN 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 15 W
Description: TRANS NPN 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 15 W
товару немає в наявності
ACST4-8CB-TR |
Виробник: STMicroelectronics
Description: TRIAC 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товару немає в наявності
ESDALC6V1-5T6 |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 6MICRO DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-Micro DFN (1x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 25W
Power Line Protection: No
Description: TVS DIODE 3VWM 6MICRO DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-Micro DFN (1x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 25W
Power Line Protection: No
товару немає в наявності
MJD31CT4-A |
Виробник: STMicroelectronics
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
на замовлення 6556 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.26 грн |
10+ | 51.82 грн |
100+ | 40.35 грн |
500+ | 32.1 грн |
1000+ | 26.15 грн |
MJD32CT4-A |
Виробник: STMicroelectronics
Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
на замовлення 2644 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.2 грн |
10+ | 33.49 грн |
100+ | 22.9 грн |
500+ | 16.99 грн |
1000+ | 15.51 грн |
SMX1J7.5A-TR |
Виробник: STMicroelectronics
Description: TVS DIODE 7.5VWM 20VC 2UQFN
Description: TVS DIODE 7.5VWM 20VC 2UQFN
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)STB18NF25 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1907 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.14 грн |
10+ | 99.95 грн |
100+ | 79.55 грн |
500+ | 63.17 грн |
STB18NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
товару немає в наявності
STB22NM60N |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 600V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
товару немає в наявності
STB45NF06T4 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Description: MOSFET N-CH 60V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товару немає в наявності
STD18NF25 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 146.63 грн |
10+ | 117.25 грн |
100+ | 93.33 грн |
500+ | 74.12 грн |
1000+ | 62.89 грн |
STK30N2LLH5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 30A POLARPAK
Description: MOSFET N-CH 25V 30A POLARPAK
товару немає в наявності
STL73D-AP |
Виробник: STMicroelectronics
Description: TRANS NPN 400V 1.5A TO92-3
Description: TRANS NPN 400V 1.5A TO92-3
товару немає в наявності
STN4NF06L |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 4A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Description: MOSFET N-CH 60V 4A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.49 грн |
10+ | 53.6 грн |
100+ | 37.1 грн |
500+ | 29.1 грн |
STS11N3LLH5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 25 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 25 V
товару немає в наявності
STTH30L06CG-TR |
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE ARRAY GP 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.93 грн |
10+ | 126.27 грн |
100+ | 91.2 грн |
500+ | 71.06 грн |
SMX1J7.5A-TR |
Виробник: STMicroelectronics
Description: TVS DIODE 7.5VWM 20VC 2UQFN
Description: TVS DIODE 7.5VWM 20VC 2UQFN
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)